| The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures S Hammersley, D Watson-Parris, P Dawson, MJ Godfrey, TJ Badcock, ... Journal of Applied Physics 111 (8), 083512, 2012 | 120 | 2012 |
| Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions S Hammersley, MJ Kappers, FCP Massabuau, SL Sahonta, P Dawson, ... Appl. Phys. Lett. 107, 132106, 2015 | 46 | 2015 |
| Investigation of unintentional indium incorporation into GaN barriers of InGaN/GaN quantum well structures FCP Massabuau, MJ Davies, WE Blenkhorn, S Hammersley, MJ Kappers, ... physica status solidi (b) 252 (5), 928-935, 2015 | 21 | 2015 |
| Study of efficiency droop and carrier localisation in an InGaN/GaN quantum well structure S Hammersley, TJ Badcock, D Watson‐Parris, MJ Godfrey, P Dawson, ... physica status solidi c 8 (7‐8), 2194-2196, 2011 | 17 | 2011 |
| Supplemental Blue LED Lighting Array to Improve the Signal Quality in Hyperspectral Imaging of Plants AK Mahlein, S Hammersley, EC Oerke, HW Dehne, H Goldbach, B Grieve Sensors 15 (6), 12834-12840, 2015 | 16 | 2015 |
| Photoluminescence studies of cubic GaN epilayers SA Church, S Hammersley, PW Mitchell, MJ Kappers, SL Sahonta, ... physica status solidi (b) 254 (8), 1600733, 2017 | 13 | 2017 |
| Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells MJ Davies, P Dawson, S Hammersley, T Zhu, MJ Kappers, CJ Humphreys, ... Applied Physics Letters 108 (25), 252101, 2016 | 13 | 2016 |
| Carrier density dependent localization and consequences for efficiency droop in InGaN/GaN quantum well structures TJ Badcock, S Hammersley, D Watson-Parris, P Dawson, MJ Godfrey, ... Japanese Journal of Applied Physics 52 (8S), 08JK10, 2013 | 12 | 2013 |
| Diatom frustules as a biomineralized scaffold for the growth of molybdenum disulfide nanosheets EA Lewis, DJ Lewis, AA Tedstone, G Kime, S Hammersley, P Dawson, ... Chemistry of Materials 28 (16), 5582-5586, 2016 | 11 | 2016 |
| A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers MJ Davies, S Hammersley, FCP Massabuau, P Dawson, RA Oliver, ... Journal of Applied Physics 119 (5), 055708, 2016 | 11 | 2016 |
| Localized multispectral crop imaging sensors: Engineering & validation of a cost effective plant stress and disease sensor B Grieve, S Hammersley, AK Mahlein, EC Oerke, H Goldbach 2015 IEEE Sensors Applications Symposium (SAS), 1-6, 2015 | 8 | 2015 |
| Room temperature PL efficiency of InGaN/GaN quantum well structures with prelayers as a function of number of quantum wells GM Christian, S Hammersley, MJ Davies, P Dawson, MJ Kappers, ... physica status solidi (c) 13 (5‐6), 248-251, 2016 | 7 | 2016 |
| Optical and structural properties of dislocations in InGaN FCP Massabuau, MK Horton, E Pearce, S Hammersley, P Chen, ... Journal of Applied Physics 125 (16), 165701, 2019 | 6 | 2019 |
| Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures S Hammersley, MJ Kappers, FCP Massabuau, SL Sahonta, P Dawson, ... physica status solidi (c) 13 (5‐6), 209-213, 2016 | 6 | 2016 |
| On the origin of blue‐green emission from heteroepitaxial nonpolar a‐plane InGaN quantum wells MJ Kappers, TJ Badcock, R Hao, MA Moram, S Hammersley, P Dawson, ... physica status solidi c 9 (3‐4), 465-468, 2012 | 5 | 2012 |
| Carrier distributions in InGaN/GaN light‐emitting diodes S Hammersley, MJ Davies, P Dawson, RA Oliver, MJ Kappers, ... physica status solidi (b) 252 (5), 890-894, 2015 | 4 | 2015 |
| Processing online crop disease warning information via sensor networks using ISA ontologies P Jackman, AJG Gray, A Brass, R Stevens, M Shi, D Scuffell, ... Agricultural Engineering International: CIGR Journal 15 (3), 243-251, 2013 | 4 | 2013 |
| Carrier dynamics in non‐polar GaN/AlGaN quantum wells intersected by basal‐plane stacking faults TJ Badcock, S Hammersley, MJ Kappers, CJ Humphreys, P Dawson physica status solidi c 7 (7‐8), 1894-1896, 2010 | 4 | 2010 |
| Effect of stacking faults on the photoluminescence spectrum of zincblende GaN SA Church, S Hammersley, PW Mitchell, MJ Kappers, LY Lee, ... Journal of Applied Physics 123 (18), 185705, 2018 | 3 | 2018 |
| Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength GM Christian, S Schulz, S Hammersley, MJ Kappers, M Frentrup, ... Japanese Journal of Applied Physics 58 (SC), SCCB09, 2019 | 2 | 2019 |
Colin HumphreysQueen Mary University of LondonBestätigte E-Mail-Adresse bei qmul.ac.uk
