| Reliability study on cobalt and ruthenium as alternative metals for advanced interconnects OV Pedreira, K Croes, A Leśniewska, C Wu, MH Van Der Veen, ... 2017 IEEE International Reliability Physics Symposium (IRPS), 6B-2.1-6B-2.8, 2017 | 68 | 2017 |
| Interconnect metals beyond copper: reliability challenges and opportunities K Croes, C Adelmann, CJ Wilson, H Zahedmanesh, OV Pedreira, C Wu, ... 2018 IEEE International Electron Devices Meeting (IEDM), 5.3. 1-5.3. 4, 2018 | 64 | 2018 |
| Electrical reliability challenges of advanced low-k dielectrics C Wu, Y Li, MR Baklanov, K Croes ECS Journal of Solid State Science and Technology 4 (1), N3065, 2014 | 61 | 2014 |
| Mechanical stability of porous low-k dielectrics K Vanstreels, C Wu, MR Baklanov ECS Journal of Solid State Science and Technology 4 (1), N3058, 2014 | 56 | 2014 |
| Effect of pore structure of nanometer scale porous films on the measured elastic modulus K Vanstreels, C Wu, M Gonzalez, D Schneider, D Gidley, P Verdonck, ... Langmuir 29 (38), 12025-12035, 2013 | 54 | 2013 |
| Low field TDDB of BEOL interconnects using> 40 months of data K Croes, P Roussel, Y Barbarin, C Wu, Y Li, J Bömmels, Z Tőkei 2013 IEEE International Reliability Physics Symposium (IRPS), 2F. 4.1-2F. 4.8, 2013 | 44 | 2013 |
| Current understanding of BEOL TDDB lifetime models K Croes, C Wu, D Kocaay, Y Li, P Roussel, J Boemmels, Z Tőkei ECS Journal of Solid State Science and Technology 4 (1), N3094, 2014 | 38 | 2014 |
| Current understanding of BEOL TDDB lifetime models K Croes, C Wu, D Kocaay, Y Li, P Roussel, J Boemmels, Z Tőkei ECS Journal of Solid State Science and Technology 4 (1), N3094, 2014 | 38 | 2014 |
| Intrinsic effect of porosity on mechanical and fracture properties of nanoporous ultralow-k dielectrics K Vanstreels, C Wu, P Verdonck, MR Baklanov Applied Physics Letters 101 (12), 2012 | 35 | 2012 |
| Testing The Limits of TaN Barrier Scaling C Witt, KB Yeap, A Leśniewska, D Wan, N Jordan, I Ciofi, C Wu, Z Tokei 2018 IEEE International Interconnect Technology Conference (IITC), 54-56, 2018 | 31 | 2018 |
| Towards the Understanding of Intrinsic Degradation and Breakdown Mechanisms of a SiOCH Low-k Dielectric C Wu, Y Li, Y Barbarin, I Ciofi, B Tang, T Kauerauf, K Croes, J Bömmels, ... Reliability Physics Symposium (IRPS), 2014 IEEE International, 3A-2-1-3A-2-6, 2014 | 21 | 2014 |
| Bonded assembly containing horizontal and vertical bonding interfaces and methods of forming the same C Wu, P Rabkin, M Higashitani US Patent 11,088,116, 2021 | 14 | 2021 |
| Bonded die assembly containing partially filled through-substrate via structures and methods for making the same C Wu, P Rabkin, Y Chen, M Higashitani US Patent 11,037,908, 2021 | 13 | 2021 |
| Correlation between stress-induced leakage current and dielectric degradation in ultra-porous SiOCH low-k materials C Wu, Y Li, A Leśniewska, O Varela Pedreira, JF de Marneffe, I Ciofi, ... Journal of Applied Physics 118 (16), 2015 | 13 | 2015 |
| Hydrogen outgassing induced liner/barrier reliability degradation in through silicon via's Y Li, Y Oba, C Wu, S Van Huylenbroeck, E Van Besien, G Vereecke, ... Applied physics letters 104 (14), 2014 | 13 | 2014 |
| Bonded die assembly containing a manganese-containing oxide bonding layer and methods for making the same C Wu, P Rabkin, M Higashitani US Patent 11,362,079, 2022 | 12 | 2022 |
| Bonded assembly containing a dielectric bonding pattern definition layer and methods of forming the same C Wu, P Rabkin, Y Chen, M Higashitani US Patent 11,094,653, 2021 | 12 | 2021 |
| Insights into metal drift induced failure in MOL and BEOL C Wu, OV Pedreira, A Leśniewska, Y Li, I Ciofi, Z Tőkei, K Croes 2018 IEEE International Reliability Physics Symposium (IRPS), 3A. 1-1-3A. 1-7, 2018 | 12 | 2018 |
| Towards understanding intrinsic degradation and breakdown mechanisms in SiOCH low-k dielectrics C Wu, Y Li, I Ciofi, T Kauerauf, J Boemmels, I De Wolf, Z Tőkei, K Croes Journal of Applied Physics 117 (6), 064101, 2015 | 12 | 2015 |
| Correlation between field dependent electrical conduction and dielectric breakdown in a SiCOH based low-k (k= 2.0) dielectric C Wu, Y Li, Y Barbarin, I Ciofi, K Croes, J Bömmels, I De Wolf, Z Tőkei Applied Physics Letters 103 (3), 2013 | 12 | 2013 |
