Large quantum-spin-Hall gap in single-layer 1T′ WSe2 P Chen, WW Pai, YH Chan, WL Sun, CZ Xu, DS Lin, MY Chou, ...
Nature communications 9 (1), 1-7, 2018
155 2018 Scanning-tunneling-microscopy studies of disilane adsorption and pyrolytic growth on Si (100)-(2x1) DS Lin, ES Hirschorn, TC Chiang, R Tsu, D Lubben, JE Greene
Physical Review B 45 (7), 3494, 1992
101 1992 Thermal reactions of phosphine with Si (100): a combined photoemission and scanning-tunneling-microscopy study DS Lin, TS Ku, TJ Sheu
Surface science 424 (1), 7-18, 1999
84 1999 Dimer charge asymmetry determined by photoemission from epitaxial Ge on Si (100)-(2× 1) DS Lin, T Miller, TC Chiang
Physical review letters 67 (16), 2187, 1991
79 1991 Charge transfer and asymmetry on Ge (111)-c (2× 8) studied by scanning tunneling microscopy ES Hirschorn, DS Lin, FM Leibsle, A Samsavar, TC Chiang
Physical Review B 44 (3), 1403, 1991
78 1991 X-ray scattering study of Ag/Si (111) buried interface structures H Hong, RD Aburano, DS Lin, H Chen, TC Chiang, P Zschack, ED Specht
Physical review letters 68 (4), 507, 1992
58 1992 Adsorption and thermal reactions of disilane and the growth of Si films on Ge (100)-(2× 1) DS Lin, T Miller, TC Chiang
Physical Review B 47 (11), 6543, 1993
54 1993 Atomistics of Ge deposition on Si (100) by atomic layer epitaxy DS Lin, JL Wu, SY Pan, TC Chiang
Physical review letters 90 (4), 046102, 2003
49 2003 Holography of Ge (111)− c (2× 8) by Surface Core-Level Photoemission MT Sieger, JM Roesler, DS Lin, T Miller, TC Chiang
Physical review letters 73 (23), 3117, 1994
46 1994 Interaction of phosphine with Si (100) from core-level photoemission and real-time scanning tunneling microscopy DS Lin, TS Ku, RP Chen
Physical Review B 61 (4), 2799, 2000
44 2000 Tunable electronic structure and surface states in rare-earth monobismuthides with partially filled shell P Li, Z Wu, F Wu, C Cao, C Guo, Y Wu, Y Liu, Z Sun, CM Cheng, DS Lin, ...
Physical Review B 98 (8), 085103, 2018
43 2018 Adsorption and dissociation of Si2H6 on Ge (001) 2× 1 R Tsu, D Lubben, TR Bramblett, JE Greene, DS Lin, TC Chiang
Surface science 280 (3), 265-276, 1993
41 1993 Boundary-structure determination of Ag/Si (111) interfaces by x-ray diffraction RD Aburano, H Hong, JM Roesler, K Chung, DS Lin, P Zschack, H Chen, ...
Physical Review B 52 (3), 1839, 1995
38 1995 Hydrogen-desorption kinetic measurement on the Si (100)-2× 1: H surface by directly counting desorption sites DS Lin, RP Chen
Physical Review B 60 (12), R8461, 1999
37 1999 Heterojunction confinement on the atomic structure evolution of near monolayer core–shell nanocatalysts in redox reactions of a direct methanol fuel cell TY Chen, GW Lee, YT Liu, YF Liao, CC Huang, DS Lin, TL Lin
Journal of Materials Chemistry A 3 (4), 1518-1529, 2015
36 2015 Growth process of Ge on Si (100)-(2× 1) in atomic-layer epitaxy from Ge 2 H 6 KH Huang, TS Ku, DS Lin
Physical Review B 56 (8), 4878, 1997
36 1997 Influence of sapphire nitridation on properties of indium nitride prepared by metalorganic vapor phase epitaxy YC Pan, WH Lee, CK Shu, HC Lin, CI Chiang, H Chang, DS Lin, MC Lee, ...
Japanese journal of applied physics 38 (2R), 645, 1999
34 1999 Surface segregation and growth‐mode transitions during the initial stages of Si growth on Ge(001)2×1 by cyclic gas‐source molecular beam epitaxy from Si2 H6 R Tsu, HZ Xiao, YW Kim, MA Hasan, HK Birnbaum, JE Greene, DS Lin, ...
Journal of applied physics 75 (1), 240-247, 1994
33 1994 Si indiffusion on Ge (100)-(2× 1) studied by core-level photoemission DS Lin, T Miller, TC Chiang
Physical Review B 45 (19), 11415, 1992
33 1992 C60 encapsulation of the Si(111)‐(7×7) surface H Hong, WE McMahon, P Zschack, DS Lin, RD Aburano, H Chen, ...
Applied physics letters 61 (26), 3127-3129, 1992
30 1992