Ilia Valov
Ilia Valov
Research Centre Juelich, RWTH-Aachen
Verified email at
TitleCited byYear
Electrochemical metallization memories—fundamentals, applications, prospects
I Valov, R Waser, JR Jameson, MN Kozicki
Nanotechnology 22 (25), 254003, 2011
Nanobatteries in redox-based resistive switches require extension of memristor theory
I Valov, E Linn, S Tappertzhofen, S Schmelzer, J van den Hurk, F Lentz, ...
Nature communications 4, 1771, 2013
Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems
A Wedig, M Luebben, DY Cho, M Moors, K Skaja, V Rana, T Hasegawa, ...
Nature nanotechnology 11 (1), 67, 2016
Electrochemical dynamics of nanoscale metallic inclusions in dielectrics
Y Yang, P Gao, L Li, X Pan, S Tappertzhofen, SH Choi, R Waser, I Valov, ...
Nature communications 5, 4232, 2014
Effects of Moisture on the Switching Characteristics of Oxide‐Based, Gapless‐Type Atomic Switches
T Tsuruoka, K Terabe, T Hasegawa, I Valov, R Waser, M Aono
Advanced Functional Materials 22 (1), 70-77, 2012
Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces
I Valov, I Sapezanskaia, A Nayak, T Tsuruoka, T Bredow, T Hasegawa, ...
Nature materials 11 (6), 530, 2012
Cation-based resistance change memory
I Valov, MN Kozicki
Journal of Physics D: Applied Physics 46 (7), 074005, 2013
Generic relevance of counter charges for cation-based nanoscale resistive switching memories
S Tappertzhofen, I Valov, T Tsuruoka, T Hasegawa, R Waser, M Aono
ACS nano 7 (7), 6396-6402, 2013
Quantum conductance and switching kinetics of AgI-based microcrossbar cells
S Tappertzhofen, I Valov, R Waser
Nanotechnology 23 (14), 145703, 2012
A chemically driven insulator–metal transition in non-stoichiometric and amorphous gallium oxide
L Nagarajan, RA De Souza, D Samuelis, I Valov, A Börger, J Janek, ...
Nature materials 7 (5), 391, 2008
Redox‐based resistive switching memories (ReRAMs): Electrochemical systems at the atomic scale
I Valov
ChemElectroChem 1 (1), 26-36, 2014
Electrocatalysts for bifunctional oxygen/air electrodes
V Nikolova, P Iliev, K Petrov, T Vitanov, E Zhecheva, R Stoyanova, I Valov, ...
Journal of Power Sources 185 (2), 727-733, 2008
Switching kinetics of electrochemical metallization memory cells
S Menzel, S Tappertzhofen, R Waser, I Valov
Physical Chemistry Chemical Physics 15 (18), 6945-6952, 2013
Nanoionic transport and electrochemical reactions in resistively switching silicon dioxide
S Tappertzhofen, H Mündelein, I Valov, R Waser
Nanoscale 4 (10), 3040-3043, 2012
Graphene‐Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOx Based Memristive Devices
M Lübben, P Karakolis, V Ioannou‐Sougleridis, P Normand, P Dimitrakis, ...
Advanced materials 27 (40), 6202-6207, 2015
Redox Reactions at Cu,Ag/Ta2O5 Interfaces and the Effects of Ta2O5 Film Density on the Forming Process in Atomic Switch Structures
T Tsuruoka, I Valov, S Tappertzhofen, J van den Hurk, T Hasegawa, ...
Advanced functional materials 25 (40), 6374-6381, 2015
Nucleation and growth phenomena in nanosized electrochemical systems for resistive switching memories
I Valov, G Staikov
Journal of Solid State Electrochemistry 17 (2), 365-371, 2013
Nanoscale electrochemistry using dielectric thin films as solid electrolytes
I Valov, WD Lu
Nanoscale 8 (29), 13828-13837, 2016
Oxide nitrides: From oxides to solids with mobile nitrogen ions
M Lerch, J Janek, KD Becker, S Berendts, H Boysen, T Bredow, ...
Progress in Solid State Chemistry 37 (2-3), 81-131, 2009
Electrochemical deposition of thin zirconia films on stainless steel 316 L
P Stefanov, D Stoychev, I Valov, A Kakanakova-Georgieva, T Marinova
Materials Chemistry and Physics 65 (2), 222-225, 2000
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Articles 1–20