Tobias Nowozin
Tobias Nowozin
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Zitiert von
Zitiert von
A write time of 6 ns for quantum dot–based memory structures
M Geller, A Marent, T Nowozin, D Bimberg, N Akçay, N Oncan
Applied Physics Letters 92 (9), 092108-092108-3, 2008
The QD-Flash: a quantum dot-based memory device
A Marent, T Nowozin, M Geller, D Bimberg
Semiconductor Science and Technology 26 (1), 014026, 2011
Hole-based memory operation in an InAs/GaAs quantum dot heterostructure
A Marent, T Nowozin, J Gelze, F Luckert, D Bimberg
Applied Physics Letters 95 (24), 242114, 2009
The structural, electronic and optical properties of GaSb/GaAs nanostructures for charge-based memory
M Hayne, RJ Young, EP Smakman, T Nowozin, P Hodgson, JK Garleff, ...
Journal of Physics D: Applied Physics 46 (26), 264001, 2013
Temperature and electric field dependence of the carrier emission processes in a quantum dot-based memory structure
T Nowozin, A Marent, M Geller, D Bimberg, N Akcay, N Öncan
Applied Physics Letters 94 (4), 042108, 2009
Linking structural and electronic properties of high-purity self-assembled GaSb/GaAs quantum dots
T Nowozin, A Marent, L Bonato, A Schliwa, D Bimberg, EP Smakman, ...
Physical review b 86 (3), 035305, 2012
800 meV localization energy in GaSb/GaAs/Al0. 3Ga0. 7As quantum dots
T Nowozin, L Bonato, A Högner, A Wiengarten, D Bimberg, WH Lin, ...
Applied Physics Letters 102 (5), 052115, 2013
Materials for future quantum dot-based memories
T Nowozin, D Bimberg, K Daqrouq, MN Ajour, M Awedh
Journal of Nanomaterials 2013, 59, 2013
Towards an universal memory based on self-organized quantum dots
M Geller, A Marent, T Nowozin, D Feise, K Pötschke, N Akcay, N Öncan, ...
Physica E: Low-dimensional Systems and Nanostructures 40 (6), 1811-1814, 2008
230 s room-temperature storage time and 1.14 eV hole localization energy in In0. 5Ga0. 5As quantum dots on a GaAs interlayer in GaP with an AlP barrier
L Bonato, EM Sala, G Stracke, T Nowozin, A Strittmatter, MN Ajour, ...
Applied Physics Letters 106 (4), 042102, 2015
Growth of In0. 25Ga0. 75As quantum dots on GaP utilizing a GaAs interlayer
G Stracke, A Glacki, T Nowozin, L Bonato, S Rodt, C Prohl, A Lenz, ...
Applied Physics Letters 101 (22), 223110-223110-4, 2012
Self-Organized Quantum Dots for Memories: Electronic Properties and Carrier Dynamics
T Nowozin
Springer Science & Business Media, 2013
Time-resolved high-temperature detection with single charge resolution of holes tunneling into many-particle quantum dot states
T Nowozin, A Marent, G Hönig, A Schliwa, D Bimberg, A Beckel, ...
Physical Review B 84 (7), 075309, 2011
3 ns single-shot read-out in a quantum dot-based memory structure
T Nowozin, A Beckel, D Bimberg, A Lorke, M Geller
Appl. Phys. Lett. 104, 053111, 2014
Self-organized quantum dots for future semiconductor memories
M Geller, A Marent, T Nowozin, D Bimberg
Journal of Physics: Condensed Matter 20 (45), 454202, 2008
GaSb quantum dots on GaAs with high localization energy of 710meV and an emission wavelength of 1.3 µm
J Richter, J Strassner, TH Loeber, H Fouckhardt, T Nowozin, L Bonato, ...
Journal of Crystal Growth 404, 48-53, 2014
Antimony-based quantum dot memories
D Bimberg, A Marent, T Nowozin, A Schliwa
SPIE OPTO, 79470L, 2011
A Marent, M Geller, T Nowozin, D Bimberg
US Patent 8,331,142, 2012
Room-temperature hysteresis in a hole-based quantum dot memory structure
T Nowozin, M Narodovitch, L Bonato, D Bimberg, MN Ajour, K Daqrouq, ...
Journal of Nanotechnology 2013, 2013
Time‐resolved detection of many‐particle hole states in InAs/GaAs quantum dots using a two‐dimensional hole gas up to 77 K
T Nowozin, A Marent, D Bimberg, A Beckel, B Marquardt, A Lorke, ...
physica status solidi (c) 9 (2), 243-246, 2012
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