Amorphous-to-crystal transition of nitrogen-and oxygen-doped Ge2Sb2Te5 films studied by in situ resistance measurements S Privitera, E Rimini, R Zonca
Applied physics letters 85 (15), 3044-3046, 2004
233 2004 Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials V Bragaglia, F Arciprete, W Zhang, AM Mio, E Zallo, K Perumal, ...
Scientific Reports 6, 23843, 2016
123 2016 Microscopy study of the conductive filament in HfO2 resistive switching memory devices S Privitera, G Bersuker, B Butcher, A Kalantarian, S Lombardo, ...
Microelectronic Engineering 109, 75-78, 2013
111 2013 Crystal nucleation and growth processes in S Privitera, C Bongiorno, E Rimini, R Zonca
Applied physics letters 84 (22), 4448-4450, 2004
98 2004 Crystallization and phase separation in thin films S Privitera, E Rimini, C Bongiorno, R Zonca, A Pirovano, R Bez
Journal of applied physics 94 (7), 4409-4413, 2003
93 2003 SiCILIA—silicon carbide detectors for intense luminosity investigations and applications S Tudisco, F La Via, C Agodi, C Altana, G Borghi, M Boscardin, ...
Sensors 18 (7), 2289, 2018
71 2018 Conductive filament structure in HfO2 resistive switching memory devices S Privitera, G Bersuker, S Lombardo, C Bongiorno, DC Gilmer
Solid-State Electronics 111, 161-165, 2015
59 2015 Chemical and structural arrangement of the trigonal phase in GeSbTe thin films AM Mio, SMS Privitera, V Bragaglia, F Arciprete, C Bongiorno, R Calarco, ...
Nanotechnology 28 (6), 065706, 2017
49 2017 Arrays of Geiger mode avalanche photodiodes E Sciacca, S Lombardo, M Mazzillo, G Condorelli, D Sanfilippo, ...
IEEE photonics technology letters 18 (15), 1633-1635, 2006
45 2006 Silicon carbide detectors study for NUMEN project A Muoio, C Agodi, DL Bonanno, DG Bongiovanni, S Calabrese, ...
EPJ Web of Conferences 117, 10006, 2016
39 2016 Single photon avalanche photodiodes arrays M Mazzillo, G Condorelli, A Campisi, E Sciacca, M Belluso, S Billotta, ...
Sensors and Actuators A: Physical 138 (2), 306-312, 2007
39 2007 Structural and electronic transitions in G e 2 S b 2 T e 5 induced by ion irradiation damage SMS Privitera, AM Mio, E Smecca, A Alberti, W Zhang, R Mazzarello, ...
Physical Review B 94 (9), 094103, 2016
38 2016 Effects of dopants on the amorphous-to-fcc transition in Ge2Sb2Te5 thin films S Privitera, E Rimini, C Bongiorno, A Pirovano, R Bez
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2007
37 2007 Correlation of dot size distribution with luminescence and electrical transport of Si quantum dots embedded in SiO2 S Lombardo, S Coffa, C Bongiorno, C Spinella, E Castagna, A Sciuto, ...
Materials Science and Engineering: B 69, 295-298, 2000
34 2000 Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys E Zallo, S Cecchi, JE Boschker, AM Mio, F Arciprete, S Privitera, ...
Scientific Reports 7 (1), 1466, 2017
32 2017 Ageing mechanisms of highly active and stable nickel-coated silicon photoanodes for water splitting T Han, Y Shi, X Song, A Mio, L Valenti, F Hui, S Privitera, S Lombardo, ...
Journal of materials chemistry A 4 (21), 8053-8060, 2016
32 2016 Highly efficient solar hydrogen production through the use of bifacial photovoltaics and membrane electrolysis SMS Privitera, M Muller, W Zwaygardt, M Carmo, RG Milazzo, P Zani, ...
Journal of power sources 473, 228619, 2020
29 2020 Development of various photovoltaic‐driven water electrolysis technologies for green solar hydrogen generation S Calnan, R Bagacki, F Bao, I Dorbandt, E Kemppainen, C Schary, ...
Solar RRL 6 (5), 2100479, 2022
28 2022 Spontaneous galvanic displacement of Pt nanostructures on nickel foam: Synthesis, characterization and use for hydrogen evolution reaction RG Milazzo, SMS Privitera, D D'Angelo, S Scalese, S Di Franco, F Maita, ...
International Journal of Hydrogen Energy 43 (16), 7903-7910, 2018
26 2018 Electrical and structural characterization of metal–oxide–semiconductor capacitors with silicon rich oxide I Crupi, S Lombardo, C Spinella, C Bongiorno, Y Liao, C Gerardi, B Fazio, ...
Journal of Applied Physics 89 (10), 5552-5558, 2001
26 2001