Benjamin Reuters
Benjamin Reuters
Wissentschaftlicher Mitarbeiter, RWTH Aachen University, GaN device technology
Bestätigte E-Mail-Adresse bei gan.rwth-aachen.de
Titel
Zitiert von
Zitiert von
Jahr
Fabrication of p-channel heterostructure field effect transistors with polarization-induced two-dimensional hole gases at metal–polar GaN/AlInGaN interfaces
B Reuters, H Hahn, A Pooth, B Holländer, U Breuer, M Heuken, H Kalisch, ...
Journal of Physics D: Applied Physics 47 (17), 175103, 2014
422014
P-channel enhancement and depletion mode GaN-based HFETs with quaternary backbarriers
H Hahn, B Reuters, A Pooth, B Holländer, M Heuken, H Kalisch, A Vescan
IEEE transactions on electron devices 60 (10), 3005-3011, 2013
392013
Polarization-engineered enhancement-mode high-electron-mobility transistors using quaternary AlInGaN barrier layers
B Reuters, A Wille, N Ketteniss, H Hahn, B Holländer, M Heuken, ...
Journal of electronic materials 42 (5), 826-832, 2013
382013
First polarization-engineered compressively strained AlInGaN barrier enhancement-mode MISHFET
H Hahn, B Reuters, A Wille, N Ketteniss, F Benkhelifa, O Ambacher, ...
Semiconductor Science and Technology 27 (5), 055004, 2012
372012
Dielectric function and optical properties of quaternary AlInGaN alloys
E Sakalauskas, B Reuters, LR Khoshroo, H Kalisch, M Heuken, A Vescan, ...
Journal of Applied Physics 110 (1), 013102, 2011
342011
Evaluation of interpolations of InN, AlN and GaN lattice and elastic constants for their ternary and quaternary alloys
FM Morales, JM Mánuel, R García, B Reuters, H Kalisch, A Vescan
Journal of Physics D: Applied Physics 46 (24), 245502, 2013
252013
Growth studies on quaternary AlInGaN layers for HEMT application
B Reuters, A Wille, B Holländer, E Sakalauskas, N Ketteniss, C Mauder, ...
Journal of electronic materials 41 (5), 905-909, 2012
242012
Relaxation and critical strain for maximum In incorporation in AlInGaN on GaN grown by metal organic vapour phase epitaxy
B Reuters, M Finken, A Wille, B Holländer, M Heuken, H Kalisch, ...
Journal of Applied Physics 112 (9), 093524, 2012
232012
AlN barrier HFETs with AlGaN channels to shift the threshold voltage to higher positive values: a proposal
H Hahn, B Reuters, H Kalisch, A Vescan
Semiconductor science and technology 28 (7), 074017, 2013
222013
Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO2 substrates
C Mauder, B Reuters, LR Khoshroo, MV Rzheutskii, EV Lutsenko, ...
Journal of crystal growth 312 (11), 1823-1827, 2010
222010
First monolithic integration of GaN-based enhancement mode n-channel and p-channel heterostructure field effect transistors
H Hahn, B Reuters, S Kotzea, G Lükens, S Geipel, H Kalisch, A Vescan
72nd Device Research Conference, 259-260, 2014
212014
Polarization-reduced quaternary InAlGaN/GaN HFET and MISHFET devices
N Ketteniss, A Askar, B Reuters, A Noculak, B Holländer, H Kalisch, ...
Semiconductor science and technology 27 (5), 055012, 2012
192012
Charge balancing in GaN-based 2-D electron gas devices employing an additional 2-D hole gas and its influence on dynamic behaviour of GaN-based heterostructure field effect …
H Hahn, B Reuters, S Geipel, M Schauerte, F Benkhelifa, O Ambacher, ...
Journal of Applied Physics 117 (10), 104508, 2015
162015
Selective MOVPE of InGaN-based LED structures on non-planar Si (111) facets of patterned Si (100) substrates
B Reuters, J Strate, H Hahn, M Finken, A Wille, M Heuken, H Kalisch, ...
Journal of crystal growth 391, 33-40, 2014
152014
Semi-polar {1 0 1} blue and green InGaN/GaN light-emitting diodes on micro-stripe patterned Si (1 0 0)
B Reuters, J Strate, A Wille, M Marx, G Lükens, L Heuken, M Heuken, ...
Journal of Physics D: Applied Physics 48 (48), 485103, 2015
142015
Effect of indium incorporation on optical and structural properties of m-plane InGaN/GaN MQW on LiAlO2 substrates
C Mauder, B Reuters, KR Wang, D Fahle, A Trampert, MV Rzheutskii, ...
Journal of crystal growth 315 (1), 246-249, 2011
142011
Strong charge carrier localization interacting with extensive nonradiative recombination in heteroepitaxially grown m-plane GaInN quantum wells
C Netzel, C Mauder, T Wernicke, B Reuters, H Kalisch, M Heuken, ...
Semiconductor science and technology 26 (10), 105017, 2011
122011
Epitaxy and characterisation of AlInGaN heterostructures for HEMT application
LR Khoshroo, C Mauder, H Behmenburg, J Woitok, W Zander, J Gruis, ...
physica status solidi c 6 (S2 2), S470-S473, 2009
122009
First small-signal data of GaN-based p-channel heterostructure field effect transistors
H Hahn, B Reuters, A Pooth, A Noculak, H Kalisch, A Vescan
Japanese Journal of Applied Physics 52 (12R), 128001, 2013
112013
Guest editorial special issue on GaN electronic devices
G Ghione, KJ Chen, T Egawa, G Meneghesso, T Palacios, R Quay
IEEE Transactions on Electron Devices 60 (10), 2975-2981, 2013
82013
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