Benjamin Reuters
Benjamin Reuters
Wissentschaftlicher Mitarbeiter, RWTH Aachen University, GaN device technology
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Zitiert von
Zitiert von
Fabrication of p-channel heterostructure field effect transistors with polarization-induced two-dimensional hole gases at metal–polar GaN/AlInGaN interfaces
B Reuters, H Hahn, A Pooth, B Holländer, U Breuer, M Heuken, H Kalisch, ...
Journal of Physics D: Applied Physics 47 (17), 175103, 2014
P-channel enhancement and depletion mode GaN-based HFETs with quaternary backbarriers
H Hahn, B Reuters, A Pooth, B Holländer, M Heuken, H Kalisch, A Vescan
IEEE transactions on electron devices 60 (10), 3005-3011, 2013
Polarization-engineered enhancement-mode high-electron-mobility transistors using quaternary AlInGaN barrier layers
B Reuters, A Wille, N Ketteniss, H Hahn, B Holländer, M Heuken, ...
Journal of electronic materials 42 (5), 826-832, 2013
First polarization-engineered compressively strained AlInGaN barrier enhancement-mode MISHFET
H Hahn, B Reuters, A Wille, N Ketteniss, F Benkhelifa, O Ambacher, ...
Semiconductor Science and Technology 27 (5), 055004, 2012
Dielectric function and optical properties of quaternary AlInGaN alloys
E Sakalauskas, B Reuters, LR Khoshroo, H Kalisch, M Heuken, A Vescan, ...
Journal of Applied Physics 110 (1), 013102, 2011
Evaluation of interpolations of InN, AlN and GaN lattice and elastic constants for their ternary and quaternary alloys
FM Morales, JM Mánuel, R García, B Reuters, H Kalisch, A Vescan
Journal of Physics D: Applied Physics 46 (24), 245502, 2013
Growth studies on quaternary AlInGaN layers for HEMT application
B Reuters, A Wille, B Holländer, E Sakalauskas, N Ketteniss, C Mauder, ...
Journal of electronic materials 41 (5), 905-909, 2012
Relaxation and critical strain for maximum In incorporation in AlInGaN on GaN grown by metal organic vapour phase epitaxy
B Reuters, M Finken, A Wille, B Holländer, M Heuken, H Kalisch, ...
Journal of Applied Physics 112 (9), 093524, 2012
AlN barrier HFETs with AlGaN channels to shift the threshold voltage to higher positive values: a proposal
H Hahn, B Reuters, H Kalisch, A Vescan
Semiconductor science and technology 28 (7), 074017, 2013
Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO2 substrates
C Mauder, B Reuters, LR Khoshroo, MV Rzheutskii, EV Lutsenko, ...
Journal of crystal growth 312 (11), 1823-1827, 2010
First monolithic integration of GaN-based enhancement mode n-channel and p-channel heterostructure field effect transistors
H Hahn, B Reuters, S Kotzea, G Lükens, S Geipel, H Kalisch, A Vescan
72nd Device Research Conference, 259-260, 2014
Polarization-reduced quaternary InAlGaN/GaN HFET and MISHFET devices
N Ketteniss, A Askar, B Reuters, A Noculak, B Holländer, H Kalisch, ...
Semiconductor science and technology 27 (5), 055012, 2012
Charge balancing in GaN-based 2-D electron gas devices employing an additional 2-D hole gas and its influence on dynamic behaviour of GaN-based heterostructure field effect …
H Hahn, B Reuters, S Geipel, M Schauerte, F Benkhelifa, O Ambacher, ...
Journal of Applied Physics 117 (10), 104508, 2015
Selective MOVPE of InGaN-based LED structures on non-planar Si (111) facets of patterned Si (100) substrates
B Reuters, J Strate, H Hahn, M Finken, A Wille, M Heuken, H Kalisch, ...
Journal of crystal growth 391, 33-40, 2014
Semi-polar {1 0 1} blue and green InGaN/GaN light-emitting diodes on micro-stripe patterned Si (1 0 0)
B Reuters, J Strate, A Wille, M Marx, G Lükens, L Heuken, M Heuken, ...
Journal of Physics D: Applied Physics 48 (48), 485103, 2015
Effect of indium incorporation on optical and structural properties of m-plane InGaN/GaN MQW on LiAlO2 substrates
C Mauder, B Reuters, KR Wang, D Fahle, A Trampert, MV Rzheutskii, ...
Journal of crystal growth 315 (1), 246-249, 2011
Strong charge carrier localization interacting with extensive nonradiative recombination in heteroepitaxially grown m-plane GaInN quantum wells
C Netzel, C Mauder, T Wernicke, B Reuters, H Kalisch, M Heuken, ...
Semiconductor science and technology 26 (10), 105017, 2011
Epitaxy and characterisation of AlInGaN heterostructures for HEMT application
LR Khoshroo, C Mauder, H Behmenburg, J Woitok, W Zander, J Gruis, ...
physica status solidi c 6 (S2 2), S470-S473, 2009
First small-signal data of GaN-based p-channel heterostructure field effect transistors
H Hahn, B Reuters, A Pooth, A Noculak, H Kalisch, A Vescan
Japanese Journal of Applied Physics 52 (12R), 128001, 2013
Guest editorial special issue on GaN electronic devices
G Ghione, KJ Chen, T Egawa, G Meneghesso, T Palacios, R Quay
IEEE Transactions on Electron Devices 60 (10), 2975-2981, 2013
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