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Richter Armin
Richter Armin
Senior Scientist, Fraunhofer ISE
Verified email at ise.fraunhofer.de
Title
Cited by
Cited by
Year
Improved quantitative description of Auger recombination in crystalline silicon
A Richter, SW Glunz, F Werner, J Schmidt, A Cuevas
Physical review B 86 (16), 165202, 2012
9022012
Reassessment of the limiting efficiency for crystalline silicon solar cells
A Richter, M Hermle, SW Glunz
IEEE journal of photovoltaics 3 (4), 1184-1191, 2013
8672013
n-Type Si solar cells with passivating electron contact: Identifying sources for efficiency limitations by wafer thickness and resistivity variation
A Richter, J Benick, F Feldmann, A Fell, M Hermle, SW Glunz
Solar Energy Materials and Solar Cells 173, 96-105, 2017
4782017
The irresistible charm of a simple current flow pattern–25% with a solar cell featuring a full-area back contact
SW Glunz, F Feldmann, A Richter, M Bivour, C Reichel, H Steinkemper, ...
Proceedings of the 31st European Photovoltaic Solar Energy Conference and …, 2015
1992015
High-efficiency n-type HP mc silicon solar cells
J Benick, A Richter, R Müller, H Hauser, F Feldmann, P Krenckel, S Riepe, ...
IEEE journal of photovoltaics 7 (5), 1171-1175, 2017
1702017
Improved parameterization of Auger recombination in silicon
A Richter, F Werner, A Cuevas, J Schmidt, SW Glunz
Energy Procedia 27, 88-94, 2012
1482012
Thermal stability of the Al2O3 passivation on p‐type silicon surfaces for solar cell applications
J Benick, A Richter, M Hermle, SW Glunz
physica status solidi (RRL)–Rapid Research Letters 3 (7‐8), 233-235, 2009
1442009
Design rules for high-efficiency both-sides-contacted silicon solar cells with balanced charge carrier transport and recombination losses
A Richter, R Müller, J Benick, F Feldmann, B Steinhauser, C Reichel, ...
Nature Energy 6 (4), 429-438, 2021
1202021
Excellent silicon surface passivation with 5 Å thin ALD Al2O3 layers: Influence of different thermal post‐deposition treatments
A Richter, J Benick, M Hermle, SW Glunz
physica status solidi (RRL)-Rapid Research Letters 5 (5-6), 202-204, 2011
1082011
Boron Emitter Passivation With Al2O3 and Al2O3/SiNx Stacks Using ALD Al2O3
A Richter, J Benick, M Hermle
IEEE Journal of Photovoltaics 3 (1), 236-245, 2013
952013
High-efficiency n-type silicon solar cells with front side boron emitter
J Benick, B Hoex, G Dingemans, WMM Kessels, A Richter, M Hermle, ...
Proceedings of the 24th European Photovoltaic Solar Energy Conference, 863-870, 2009
862009
Effect of a post-deposition anneal on Al2O3/Si interface properties
J Benick, A Richter, TTA Li, NE Grant, KR McIntosh, Y Ren, KJ Weber, ...
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE, 000891-000896, 2010
752010
n-type silicon-enabling efficiencies> 20% in industrial production
SW Glunz, J Benick, D Biro, M Bivour, M Hermle, D Pysch, M Rauer, ...
2010 35th IEEE Photovoltaic Specialists Conference, 000050-000056, 2010
712010
Tunnel oxide passivating electron contacts as full‐area rear emitter of high‐efficiency p‐type silicon solar cells
A Richter, J Benick, R Müller, F Feldmann, C Reichel, M Hermle, ...
Progress in Photovoltaics: Research and Applications 26 (8), 579-586, 2018
702018
Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-Type Silicon Solar Cells
A Richter, S Henneck, J Benick, M Hörteis, M Hermle, S Glunz
Proceedings of the 25th European Photovoltaic Solar Energy Conference …, 2010
632010
Upconverter silicon solar cell devices for efficient utilization of sub-band-gap photons under concentrated solar radiation
S Fischer, A Ivaturi, B Fröhlich, M Rüdiger, A Richter, KW Krämer, ...
IEEE journal of photovoltaics 4 (1), 183-189, 2013
602013
Parameterization of free carrier absorption in highly doped silicon for solar cells
M Rüdiger, J Greulich, A Richter, M Hermle
IEEE Transactions on Electron Devices 60 (7), 2156-2163, 2013
552013
Analysis of the temperature dependence of the open-circuit voltage
P Löper, D Pysch, A Richter, M Hermle, S Janz, M Zacharias, SW Glunz
Energy Procedia 27, 135-142, 2012
552012
Reaction kinetics during the thermal activation of the silicon surface passivation with atomic layer deposited Al2O3
A Richter, J Benick, M Hermle, SW Glunz
Applied Physics Letters 104 (6), 061606, 2014
532014
Properties of the c-Si/Al2O3 interface of ultrathin atomic layer deposited Al2O3 layers capped by SiNx for c-Si surface passivation
D Schuldis, A Richter, J Benick, P Saint-Cast, M Hermle, SW Glunz
Applied Physics Letters 105 (23), 231601, 2014
522014
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