| Self-consistent-charge density-functional tight-binding method for simulations of complex materials properties M Elstner, D Porezag, G Jungnickel, J Elsner, M Haugk, T Frauenheim, ... Physical Review B 58 (11), 7260, 1998 | 4427 | 1998 |
| Deep acceptors trapped at threading-edge dislocations in GaN J Elsner, R Jones, MI Heggie, PK Sitch, M Haugk, T Frauenheim, S Öberg, ... Physical review B 58 (19), 12571, 1998 | 386 | 1998 |
| Stability of large vacancy clusters in silicon TEM Staab, A Sieck, M Haugk, MJ Puska, T Frauenheim, HS Leipner Physical review B 65 (11), 115210, 2002 | 89 | 2002 |
| Effect of oxygen on the growth of (101̄0) GaN surfaces: The formation of nanopipes J Elsner, R Jones, M Haugk, R Gutierrez, T Frauenheim, MI Heggie, ... Applied physics letters 73 (24), 3530-3532, 1998 | 77 | 1998 |
| Magic number vacancy aggregates in Si and GaAs–structure and positron lifetime studies TEM Staab, M Haugk, A Sieck, T Frauenheim, HS Leipner Physica B: Condensed Matter 273, 501-504, 1999 | 60 | 1999 |
| Structures, Energetics and Electronic Properties of Complex III—V Semiconductor Systems M Haugk, J Elsner, T Frauenheim, TEM Staab, CD Latham, R Jones, ... physica status solidi (b) 217 (1), 473-511, 2000 | 58 | 2000 |
| Theory of Ga, N and H terminated GaN (0 0 0 1)(0 0 0 1) surfaces J Elsner, M Haugk, G Jungnickel, T Frauenheim Solid state communications 106 (11), 739-743, 1998 | 49 | 1998 |
| Do arsenic interstitials really exist in As-rich GaAs? TEM Staab, RM Nieminen, J Gebauer, R Krause-Rehberg, M Luysberg, ... Physical review letters 87 (4), 045504, 2001 | 47 | 2001 |
| Interaction of oxygen with threading dislocations in GaN R Jones, J Elsner, M Haugk, R Gutierrez, T Frauenheim, MI Heggie, ... physica status solidi (a) 171 (1), 167-173, 1999 | 41 | 1999 |
| A density-functional based tight-binding approach to GaAs surface reconstructions M Haugk, J Elsner, T Frauenheim Journal of Physics: Condensed Matter 9 (35), 7305, 1997 | 34 | 1997 |
| A theoretical study of O chemisorption on GaN (0 0 0 1)/(0 0 0 1̄) surfaces J Elsner, R Gutierrez, B Hourahine, R Jones, M Haugk, T Frauenheim Solid state communications 108 (12), 953-958, 1998 | 25 | 1998 |
| Vacancy clusters in plastically deformed semiconductors HS Leipner, CG Hübner, TEM Staab, M Haugk, A Sieck, ... Journal of Physics: Condensed Matter 12 (49), 10071, 2000 | 24 | 2000 |
| An ab initio two-center tight-binding approach to simulations of complex materials properties T Frauenheim, D Porezag, M Elstner, G Jungnickel, J Elsner, M Haugk, ... MRS Online Proceedings Library 491, 91-104, 1997 | 23 | 1997 |
| Reconstructions of the Si-terminated (100) surface in : A theoretical study R Gutierrez, M Haugk, J Elsner, G Jungnickel, M Elstner, A Sieck, ... Physical Review B 60 (3), 1771, 1999 | 20 | 1999 |
| Positron annihilation at dislocations and related point defects in semiconductors HS Leipner, CG Hübner, TEM Staab, M Haugk, R Krause‐Rehberg physica status solidi (a) 171 (1), 377-382, 1999 | 19 | 1999 |
| Density-functional calculations of carbon diffusion in GaAs CD Latham, M Haugk, R Jones, T Frauenheim, PR Briddon Physical Review B 60 (22), 15117, 1999 | 15 | 1999 |
| A density-functional based tight-binding approach to III–V semiconductor clusters J Eisner, M Haugk, G Jungnickel, T Frauenheim Journal of Materials Chemistry 6 (10), 1649-1656, 1996 | 15 | 1996 |
| A parallel code for a self-consistent charge density functional based tight binding method: Total energy calculations for extended systems M Haugk, J Elsner, T Heine, T Frauenheim, G Seifert Computational materials science 13 (4), 239-251, 1999 | 14 | 1999 |
| Domain boundaries on {112¯ 0} planes in GaN: A theoretical study J Elsner, M Kaukonen, MI Heggie, M Haugk, T Frauenheim, R Jones Physical Review B 58 (23), 15347, 1998 | 14 | 1998 |
| Structural models for the reconstruction of the surface and their relative stabilities M Haugk, J Elsner, M Sternberg, T Frauenheim Journal of Physics: Condensed Matter 10 (21), 4523, 1998 | 12 | 1998 |
