| The origin of ferroelectricity in Hf1− xZrxO2: A computational investigation and a surface energy model R Materlik, C Künneth, A Kersch Journal of Applied Physics 117 (13), 2015 | 732 | 2015 |
| Stabilizing the ferroelectric phase in doped hafnium oxide M Hoffmann, U Schroeder, T Schenk, T Shimizu, H Funakubo, O Sakata, ... Journal of Applied Physics 118 (7), 2015 | 519 | 2015 |
| Strontium doped hafnium oxide thin films: Wide process window for ferroelectric memories T Schenk, S Mueller, U Schroeder, R Materlik, A Kersch, M Popovici, ... 2013 Proceedings of the European Solid-State Device Research Conference …, 2013 | 122 | 2013 |
| Al-, Y-, and La-doping effects favoring intrinsic and field induced ferroelectricity in HfO2: A first principles study R Materlik, C Künneth, M Falkowski, T Mikolajick, A Kersch Journal of Applied Physics 123 (16), 2018 | 113 | 2018 |
| Impact of Four-Valent Doping on the Crystallographic Phase Formation for Ferroelectric HfO2 from First-Principles: Implications for Ferroelectric Memory and … C Künneth, R Materlik, M Falkowski, A Kersch ACS Applied Nano Materials 1 (1), 254-264, 2017 | 77 | 2017 |
| Modeling ferroelectric film properties and size effects from tetragonal interlayer in Hf1–xZrxO2 grains C Künneth, R Materlik, A Kersch Journal of Applied Physics 121 (20), 2017 | 61 | 2017 |
| The impact of charge compensated and uncompensated strontium defects on the stabilization of the ferroelectric phase in HfO2 R Materlik, C Künneth, T Mikolajick, A Kersch Applied Physics Letters 111 (8), 2017 | 37 | 2017 |
| Unexpectedly large energy variations from dopant interactions in ferroelectric HfO2 from high-throughput ab initio calculations M Falkowski, C Künneth, R Materlik, A Kersch npj Computational Materials 4 (1), 73, 2018 | 23 | 2018 |
| 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC) T Schenk, S Mueller, U Schroeder, R Materlik, A Kersch, M Popovici, ... IEEE, 2013 | 16* | 2013 |
| Stabilization of ferroelectricity in Hafnia, zirconia and their mixtures by dopants and interface energy: First principles calculations and a phenomenological model R Materlik Technische Universität Dresden, 2019 | 8 | 2019 |
| Doped hafnium oxide for ferroelectric memories T Schenk, M Hoffmann, C Richter, M Pešić, S Mueller, S Slesazeck, ... Materials Research Society Fall Meeting, 2015 | 5 | 2015 |
| Searching for the Origin of the Ferroelectric Phase in HfO2 U Schroeder, T Schenk, C Richter, M Hoffmann, D Martin, T Shimizu, ... ISAF Singapore Conf, 1-48, 2015 | 1 | 2015 |
| Al-, Y-, and La-doping effects favoring intrinsic and field induced ferroelectricity in HfO₂ R Materlik, C Künneth, M Falkowski, T Mikolajick, A Kersch | | 2018 |
| Stabilization of ferroelectric properties in Hafnia with doping A Kersch, R Materlik, C Künneth, M Falkowski High Performance Computing, 78, 2018 | | 2018 |
| Ab Initio Calculations Concerning the Phase Stabilization of Ferroelectric and Anti-Ferroelectric Zirconia Crystals with Dopants R Materlik Hochschule für Angewandte Wissenschaften München, 2013 | | 2013 |
| Strontium Doped Hafnium Oxide Thin Films T Schenk, S Mueller, U Schroeder, R Materlik, A Kersch, M Popovici, ... | | |
| 2) These two authors contributed equally to this work. 3) NaMLab gGmbH, Noethnitzer Strasse 64, 01187 Dresden, Germany 4) Chair of Nanoelectronic Materials, Technische … R Materlik, C Künneth, T Mikolajick, A Kersch | | |
