Michelle Moram
Michelle Moram
Senior Lecturer and Royal Society University Research Fellow, Imperial College London
Verified email at imperial.ac.uk
Cited by
Cited by
X-ray diffraction of III-nitrides
MA Moram, ME Vickers
Reports on progress in physics 72 (3), 036502, 2009
Understanding x-ray diffraction of nonpolar gallium nitride films
MA Moram, CF Johnston, JL Hollander, MJ Kappers, CJ Humphreys
Journal of Applied Physics 105 (11), 113501, 2009
On the origin of threading dislocations in GaN films
MA Moram, CS Ghedia, DVS Rao, JS Barnard, Y Zhang, MJ Kappers, ...
Journal of applied physics 106 (7), 073513, 2009
Piezoelectric coefficients and spontaneous polarization of ScAlN
MA Caro, S Zhang, T Riekkinen, M Ylilammi, MA Moram, ...
Journal of Physics: Condensed Matter 27 (24), 245901, 2015
Accurate experimental determination of the Poisson’s ratio of GaN using high-resolution x-ray diffraction
MA Moram, ZH Barber, CJ Humphreys
Journal of applied physics 102 (2), 023505, 2007
Dislocation reduction in gallium nitride films using scandium nitride interlayers
MA Moram, Y Zhang, MJ Kappers, ZH Barber, CJ Humphreys
Applied Physics Letters 91 (15), 152101, 2007
Elastic constants and critical thicknesses of ScGaN and ScAlN
S Zhang, WY Fu, D Holec, CJ Humphreys, MA Moram
Journal of Applied Physics 114 (24), 243516, 2013
Assessment of defect reduction methods for nonpolar a-plane GaN grown on r-plane sapphire
CF Johnston, MJ Kappers, MA Moram, JL Hollander, CJ Humphreys
Journal of crystal growth 311 (12), 3295-3299, 2009
The effect of oxygen incorporation in sputtered scandium nitride films
MA Moram, ZH Barber, CJ Humphreys
Thin Solid Films 516 (23), 8569-8572, 2008
ScGaN and ScAlN: emerging nitride materials
MA Moram, S Zhang
Journal of Materials Chemistry A 2 (17), 6042-6050, 2014
The effects of Si doping on dislocation movement and tensile stress in GaN films
MA Moram, MJ Kappers, F Massabuau, RA Oliver, CJ Humphreys
Journal of Applied Physics 109 (7), 073509, 2011
Tunable optoelectronic and ferroelectric properties in Sc-based III-nitrides
S Zhang, D Holec, WY Fu, CJ Humphreys, MA Moram
Journal of Applied Physics 114 (13), 133510, 2013
Defect reduction in semipolar GaN grown on -plane sapphire using ScN interlayers
CF Johnston, MA Moram, MJ Kappers, CJ Humphreys
Applied Physics Letters 94 (16), 161109, 2009
Segregation of In to dislocations in InGaN
MK Horton, S Rhode, SL Sahonta, MJ Kappers, SJ Haigh, TJ Pennycook, ...
Nano letters 15 (2), 923-930, 2015
New electrochemically improved tetrahedral amorphous carbon films for biological applications
T Laurila, V Protopopova, S Rhode, S Sainio, T Palomäki, M Moram, ...
Diamond and related materials 49, 62-71, 2014
The spatial distribution of threading dislocations in gallium nitride films
MA Moram, RA Oliver, MJ Kappers, CJ Humphreys
Advanced Materials 21 (38‐39), 3941-3944, 2009
Growth of dislocation-free GaN islands on Si (1 1 1) using a scandium nitride buffer layer
MA Moram, MJ Kappers, TB Joyce, PR Chalker, ZH Barber, ...
Journal of crystal growth 308 (2), 302-308, 2007
Dislocation movement in GaN films
MA Moram, TC Sadler, M Häberlen, MJ Kappers, CJ Humphreys
Applied Physics Letters 97 (26), 261907, 2010
Young’s modulus, Poisson’s ratio, and residual stress and strain in (111)-oriented scandium nitride thin films on silicon
MA Moram, ZH Barber, CJ Humphreys, TB Joyce, PR Chalker
Journal of applied physics 100 (2), 023514, 2006
Electronic and optical properties of nonpolar a-plane GaN quantum wells
S Schulz, TJ Badcock, MA Moram, P Dawson, MJ Kappers, ...
Physical Review B 82 (12), 125318, 2010
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