Ming Xu
Ming Xu
Huazhong University of Sci & Tech
Keine bestätigte E-Mail-Adresse
Zitiert von
Zitiert von
Mechanisms of Li+ transport in garnet-type cubic Li 3+ x La 3 M 2 O 12 (M= Te, Nb, Zr)
M Xu, MS Park, JM Lee, TY Kim, YS Park, E Ma
Physical Review B 85 (5), 052301, 2012
Nature of atomic bonding and atomic structure in the phase-change Ge 2 Sb 2 Te 5 glass
M Xu, YQ Cheng, HW Sheng, E Ma
Physical review letters 103 (19), 195502, 2009
Recent advances on neuromorphic devices based on chalcogenide phase‐change materials
M Xu, X Mai, J Lin, W Zhang, Y Li, Y He, H Tong, X Hou, P Zhou, X Miao
Advanced Functional Materials 30 (50), 2003419, 2020
Optical properties of cubic Ti3N4, Zr3N4, and Hf3N4
M Xu, S Wang, G Yin, J Li, Y Zheng, L Chen, Y Jia
Applied physics letters 89 (15), 2006
Experimental and ab initio molecular dynamics simulation studies of liquid Al 60 Cu 40 alloy
SY Wang, MJ Kramer, M Xu, S Wu, SG Hao, DJ Sordelet, KM Ho, ...
Physical Review B 79 (14), 144205, 2009
One-dimensional stringlike cooperative migration of lithium ions in an ultrafast ionic conductor
M Xu, J Ding, E Ma
Applied Physics Letters 101 (3), 2012
New Structural Picture of the Ge_ {2} Sb_ {2} Te_ {5} Phase-Change Alloy
XQ Liu, XB Li, L Zhang, YQ Cheng, ZG Yan, M Xu, XD Han, SB Zhang, ...
Physical Review Letters 106 (2), 25501, 2011
How fragility makes phase-change data storage robust: insights from ab initio simulations
W Zhang, I Ronneberger, P Zalden, M Xu, M Salinga, M Wuttig, ...
Scientific Reports 4 (1), 6529, 2014
GGA-1/2 self-energy correction for accurate band structure calculations: the case of resistive switching oxides
JH Yuan, Q Chen, LRC Fonseca, M Xu, KH Xue, XS Miao
Journal of Physics Communications 2 (10), 105005, 2018
Pressure tunes electrical resistivity by four orders of magnitude in amorphous Ge2Sb2Te5 phase-change memory alloy
M Xu, YQ Cheng, L Wang, HW Sheng, Y Meng, WG Yang, XD Han, E Ma
Proceedings of the National Academy of Sciences 109 (18), E1055-E1062, 2012
Metavalent bonding in crystalline solids: how does it collapse?
L Guarneri, S Jakobs, A von Hoegen, S Maier, M Xu, M Zhu, S Wahl, ...
Advanced Materials 33 (39), 2102356, 2021
Temperature effects on atomic pair distribution functions of melts
J Ding, M Xu, PF Guan, SW Deng, YQ Cheng, E Ma
The Journal of chemical physics 140 (6), 2014
KTlO: a metal shrouded 2D semiconductor with high carrier mobility and tunable magnetism
YQ Song, JH Yuan, LH Li, M Xu, JF Wang, KH Xue, XS Miao
Nanoscale 11 (3), 1131-1139, 2019
Direct observation of partial disorder and zipperlike transition in crystalline phase change materials
M Zhu, K Ren, L Liu, S Lv, X Miao, M Xu, Z Song
Physical Review Materials 3 (3), 033603, 2019
Electronic and optical properties of noble metal oxides M2O (M= Cu, Ag and Au): First-principles study
F Pei, S Wu, G Wang, M Xu, SY Wang, LY Chen, Y Jia
Journal of the Korean Physical Society 55 (3), 1243-1249, 2009
“Stickier”-Surface Sb2Te3 Templates Enable Fast Memory Switching of Phase Change Material GeSb2Te4 with Growth-Dominated Crystallization
J Feng, A Lotnyk, H Bryja, X Wang, M Xu, Q Lin, X Cheng, M Xu, H Tong, ...
ACS Applied Materials & Interfaces 12 (29), 33397-33407, 2020
Low‐Power Memristive Logic Device Enabled by Controllable Oxidation of 2D HfSe2 for In‐Memory Computing
L Liu, Y Li, X Huang, J Chen, Z Yang, KH Xue, M Xu, H Chen, P Zhou, ...
Advanced Science 8 (15), 2005038, 2021
Evolution of short-and medium-range order in the melt-quenching amorphization of Ge 2 Sb 2 Te 5
C Qiao, YR Guo, F Dong, JJ Wang, H Shen, SY Wang, M Xu, XS Miao, ...
Journal of Materials Chemistry C 6 (18), 5001-5011, 2018
Disorder Control in Crystalline GeSb2Te4 Using High Pressure
M Xu, W Zhang, R Mazzarello, M Wuttig
Advanced Science 2 (8), 1500117, 2015
Controlled memory and threshold switching behaviors in a heterogeneous memristor for neuromorphic computing
HY Li, XD Huang, JH Yuan, YF Lu, TQ Wan, Y Li, KH Xue, YH He, M Xu, ...
Advanced Electronic Materials 6 (8), 2000309, 2020
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