Bound exciton and donor–acceptor pair recombinations in ZnO BK Meyer, H Alves, DM Hofmann, W Kriegseis, D Forster, F Bertram, ...
physica status solidi (b) 241 (2), 231-260, 2004
1911 2004 Ultranarrow luminescence lines from single quantum dots M Grundmann, J Christen, NN Ledentsov, J Böhrer, D Bimberg, ...
Physical Review Letters 74 (20), 4043, 1995
970 1995 Heterointerfaces in quantum wells and epitaxial growth processes: Evaluation by luminescence techniques MA Herman, D Bimberg, J Christen
Journal of Applied Physics 70 (2), R1-R52, 1991
384 1991 Line shapes of intersubband and excitonic recombination in quantum wells: Influence of final-state interaction, statistical broadening, and momentum conservation J Christen, D Bimberg
Physical Review B 42 (11), 7213, 1990
232 1990 Optical and structural analysis of ZnCdO layers grown by metalorganic vapor-phase epitaxy T Gruber, C Kirchner, R Kling, F Reuss, A Waag, F Bertram, D Forster, ...
Applied physics letters 83 (16), 3290-3292, 2003
217 2003 MOVPE growth of GaN on Si (1 1 1) substrates A Dadgar, M Poschenrieder, J Bläsing, O Contreras, F Bertram, ...
Journal of Crystal Growth 248, 556-562, 2003
209 2003 Scanning cathodoluminescence microscopy: A unique approach to atomic‐scale characterization of heterointerfaces and imaging of semiconductor inhomogeneities J Christen, M Grundmann, D Bimberg
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1991
199 1991 Cathodoluminescence atomic scale images of monolayer islands at GaAs/GaAlAs interfaces D Bimberg, J Christen, T Fukunaga, H Nakashima, DE Mars, JN Miller
Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1987
195 1987 InAs/GaAs quantum dots radiative recombination from zero‐dimensional states M Grundmann, NN Ledentsov, R Heitz, L Eckey, J Christen, J Böhrer, ...
physica status solidi (b) 188 (1), 249-258, 1995
184 1995 Strain relaxation and strong impurity incorporation in epitaxial laterally overgrown GaN: Direct imaging of different growth domains by cathodoluminescence microscopy and micro … F Bertram, T Riemann, J Christen, A Kaschner, A Hoffmann, C Thomsen, ...
Applied Physics Letters 74 (3), 359-361, 1999
167 1999 Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick A Bell, S Srinivasan, C Plumlee, H Omiya, FA Ponce, J Christen, ...
Journal of applied physics 95 (9), 4670-4674, 2004
166 2004 Epitaxy of GaN on silicon—impact of symmetry and surface reconstruction A Dadgar, F Schulze, M Wienecke, A Gadanecz, J Bläsing, P Veit, ...
New Journal of Physics 9 (10), 389, 2007
159 2007 Proceedings of the 18th International Conference on the Physics of Semiconductors, Stockholm, 1986 GEW Bauer, D Bimberg, J Christen, D Oertel, D Mars, JN Miller, ...
World Scientific, Singapore, 1987
159 1987 Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range C Hums, J Bläsing, A Dadgar, A Diez, T Hempel, J Christen, A Krost, ...
Applied Physics Letters 90 (2), 022105, 2007
155 2007 Growth of blue GaN LED structures on 150-mm Si (1 1 1) A Dadgar, C Hums, A Diez, J Bläsing, A Krost
Journal of Crystal Growth 297 (2), 279-282, 2006
155 2006 Optical investigations of AlGaN on GaN epitaxial films G Steude, T Christmann, BK Meyer, A Goeldner, A Hoffmann, F Bertram, ...
Materials Research Society Internet Journal of Nitride Semiconductor …, 1999
151 1999 Carrier capture and quantum confinement in GaAs/AlGaAs quantum wire lasers grown on V‐grooved substrates M Walther, E Kapon, J Christen, DM Hwang, R Bhat
Applied physics letters 60 (5), 521-523, 1992
145 1992 Self-organization processes in MBE-grown quantum dot structures D Bimberg, M Grundmann, NN Ledentsov, SS Ruvimov, P Werner, ...
Thin Solid Films 267 (1-2), 32-36, 1995
141 1995 Bright blue electroluminescence from an InGaN/GaN multiquantum-well diode on Si (111): Impact of an AlGaN/GaN multilayer A Dadgar, J Christen, T Riemann, S Richter, J Bläsing, A Diez, A Krost, ...
Applied Physics Letters 78 (15), 2211-2213, 2001
140 2001 Dislocation annihilation by silicon delta-doping in GaN epitaxy on Si O Contreras, FA Ponce, J Christen, A Dadgar, A Krost
Applied physics letters 81 (25), 4712-4714, 2002
138 2002 
Armin Dadgarapl. Prof.Bestätigte E-Mail-Adresse bei ovgu.de
