| Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry T Metzger, R Höpler, E Born, O Ambacher, M Stutzmann, R Stömmer, ... Philosophical magazine A 77 (4), 1013-1025, 1998 | 574 | 1998 |
| Silicon nanowire-based solar cells on glass: synthesis, optical properties, and cell parameters V Sivakov, G Andrä, A Gawlik, A Berger, J Plentz, F Falk, SH Christiansen Nano letters 9 (4), 1549-1554, 2009 | 523 | 2009 |
| Silicon nanowire-based solar cells T Stelzner, M Pietsch, G Andrä, F Falk, E Ose, S Christiansen Nanotechnology 19 (29), 295203, 2008 | 469 | 2008 |
| Measurement of the bending strength of vapor− liquid− solid grown silicon nanowires S Hoffmann, I Utke, B Moser, J Michler, SH Christiansen, V Schmidt, ... Nano letters 6 (4), 622-625, 2006 | 277 | 2006 |
| High performance strained silicon FinFETs device and method for forming same SW Bedell, KK Chan, D Chidambarrao, SH Christianson, JO Chu, ... US Patent 7,705,345, 2010 | 231 | 2010 |
| Strained state of Ge (Si) islands on Si: Finite element calculations and comparison to convergent beam electron‐diffraction measurements S Christiansen, M Albrecht, HP Strunk, HJ Maier Applied physics letters 64 (26), 3617-3619, 1994 | 224 | 1994 |
| Optical properties of individual silicon nanowires for photonic devices G Bronstrup, N Jahr, C Leiterer, A Csáki, W Fritzsche, S Christiansen ACS nano 4 (12), 7113-7122, 2010 | 193 | 2010 |
| Wafer direct bonding: From advanced substrate engineering to future applications in micro/nanoelectronics SH Christiansen, R Singh, U Gosele Proceedings of the IEEE 94 (12), 2060-2106, 2006 | 164 | 2006 |
| Fracture strength and Young’s modulus of ZnO nanowires S Hoffmann, F Östlund, J Michler, HJ Fan, M Zacharias, SH Christiansen, ... Nanotechnology 18 (20), 205503, 2007 | 162 | 2007 |
| Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing SH Christiansen, JO Chu, A Grill, PM Mooney US Patent 6,593,625, 2003 | 156 | 2003 |
| Method for fabrication of relaxed SiGe buffer layers on silicon-on-insulators and structures containing the same SH Christiansen, A Grill, PM Mooney US Patent 6,515,335, 2003 | 146 | 2003 |
| Phonons as probes in self-organized SiGe islands J Groenen, R Carles, S Christiansen, M Albrecht, W Dorsch, HP Strunk, ... Applied physics letters 71 (26), 3856-3858, 1997 | 145 | 1997 |
| Ultrasensitive silicon nanowire for real-world gas sensing: noninvasive diagnosis of cancer from breath volatolome N Shehada, G Brönstrup, K Funka, S Christiansen, M Leja, H Haick Nano letters 15 (2), 1288-1295, 2015 | 143 | 2015 |
| Microstructure of novel superhard nanocrystalline-amorphous composites as analyzed by high resolution transmission electron microscopy S Christiansen, M Albrecht, HP Strunk, S Veprek Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1998 | 139 | 1998 |
| Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing SH Christiansen, JO Chu, A Grill, PM Mooney US Patent 6,855,649, 2005 | 131 | 2005 |
| Nanostructured gold films for SERS by block copolymer-templated galvanic displacement reactions Y Wang, M Becker, L Wang, J Liu, R Scholz, J Peng, U Gösele, ... Nano letters 9 (6), 2384-2389, 2009 | 129 | 2009 |
| Surface ripples, crosshatch pattern, and dislocation formation: Cooperating mechanisms in lattice mismatch relaxation M Albrecht, S Christiansen, J Michler, W Dorsch, HP Strunk, PO Hansson, ... Applied physics letters 67 (9), 1232-1234, 1995 | 122 | 1995 |
| Axial pn junctions realized in silicon nanowires by ion implantation S Hoffmann, J Bauer, C Ronning, T Stelzner, J Michler, C Ballif, V Sivakov, ... Nano letters 9 (4), 1341-1344, 2009 | 119 | 2009 |
| Synthesis mechanisms of organized gold nanoparticles: influence of annealing temperature and atmosphere M Bechelany, X Maeder, J Riesterer, J Hankache, D Lerose, ... Crystal Growth & Design 10 (2), 587-596, 2010 | 118 | 2010 |
| Vapour-transport-deposition growth of ZnO nanostructures: switch between c-axial wires and a-axial belts by indium doping HJ Fan, B Fuhrmann, R Scholz, C Himcinschi, A Berger, H Leipner, ... Nanotechnology 17 (11), S231, 2006 | 117 | 2006 |
