| Auger-limited carrier recombination and relaxation in CdSe colloidal quantum wells E Baghani, SK O’Leary, I Fedin, DV Talapin, M Pelton The journal of physical chemistry letters 6 (6), 1032-1036, 2015 | 89 | 2015 |
| Electron mobility limited by scattering from screened positively charged dislocation lines within indium nitride E Baghani, SK O’Leary Applied Physics Letters 99 (26), 2011 | 29 | 2011 |
| An enhancement in the low-field electron mobility associated with a ZnMgO/ZnO heterostructure: The role of a two-dimensional electron gas E Baghani, SK O'Leary Journal of Applied Physics 114 (2), 2013 | 8 | 2013 |
| Occupation statistics of the VGa–ON dislocations within n-type gallium nitride E Baghani, SK O’Leary Journal of Applied Physics 110 (3), 2011 | 8 | 2011 |
| Occupation statistics of dislocations within uncompensated n-type wurtzite gallium nitride E Baghani, SK O’Leary Journal of Applied Physics 109 (11), 2011 | 8 | 2011 |
| Dislocation line charge screening within n-type gallium nitride E Baghani, SK O'Leary Journal of Applied Physics 113 (2), 2013 | 7 | 2013 |
| Electron transport within the two-dimensional electron gas formed at a ZnO/ZnMgO heterojunction: Recent progress WA Hadi, E Baghani, MS Shur, SK O’Leary MRS Online Proceedings Library 1577, 1-6, 2013 | 2 | 2013 |
| Occupation statistics of the 5/7-atom dislocation core structure within n-type indium nitride E Baghani, SK O’Leary Journal of Applied Physics 114 (5), 2013 | 2 | 2013 |
| Threading dislocation lines within indium nitride versus gallium nitride: The implications of different dominant dislocation line charge screening mechanisms E Baghani, SK O’Leary Solid State Communications 352, 114833, 2022 | 1 | 2022 |
| Semiconductor nanoplatelets: a new colloidal system for low-threshold high-gain stimulated emission (Presentation Recording) MA Pelton, C She, I Fedin, D Dolzhnikov, S Ithurria, E Baghani, ... Nanophotonic Materials XII 9545, 8-8, 2015 | | 2015 |
| Electron transport within a zinc-oxide-based two-dimensional electron gas: The impact of variations in the electron effective mass WA Hadi, E Baghani, MS Shur, SK O’Leary MRS Online Proceedings Library (OPL) 1674, mrss14-1674-j08-19, 2014 | | 2014 |
| A transition in the nature of the occupancy of the dislocation lines within n-type wurtzite gallium nitride E Baghani, SK O'Leary Journal of Applied Physics 113 (16), 2013 | | 2013 |
| Electrical properties of dislocations within the nitride based semiconductors gallium nitride and indium nitride E Baghani University of British Columbia, 2012 | | 2012 |
| The occupancy of the threading dislocation lines within n-type gallium nitride: Recent progress E Baghani, SK O’Leary MRS Online Proceedings Library (OPL) 1432, mrss12-1432-g07-07, 2012 | | 2012 |
