Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO) K Hiramatsu, K Nishiyama, M Onishi, H Mizutani, M Narukawa, ...
Journal of Crystal Growth 221 (1-4), 316-326, 2000
519 2000 Recent progress in selective area growth and epitaxial lateral overgrowth of III‐nitrides: effects of reactor pressure in MOVPE growth K Hiramatsu, K Nishiyama, A Motogaito, H Miyake, Y Iyechika, T Maeda
physica status solidi (a) 176 (1), 535-543, 1999
357 1999 Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing H Miyake, CH Lin, K Tokoro, K Hiramatsu
Journal of Crystal Growth 456, 155-159, 2016
234 2016 Annealing of an AlN buffer layer in N2–CO for growth of a high-quality AlN film on sapphire H Miyake, G Nishio, S Suzuki, K Hiramatsu, H Fukuyama, J Kaur, ...
Applied Physics Express 9 (2), 025501, 2016
177 2016 AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire N Susilo, S Hagedorn, D Jaeger, H Miyake, U Zeimer, C Reich, ...
Applied Physics Letters 112 (4), 041110, 2018
171 2018 Effects of sodium on electrical properties in Cu2 ZnSnS4 single crystal A Nagaoka, H Miyake, T Taniyama, K Kakimoto, Y Nose, MA Scarpulla, ...
Applied Physics Letters 104 (15), 152101, 2014
136 2014 Effects of reactor pressure on epitaxial lateral overgrowth of GaN via low-pressure metalorganic vapor phase epitaxy H Miyake, A Motogaito, K Hiramatsu
Japanese journal of applied physics 38 (9A), L1000, 1999
121 1999 Method for fabricating III-V group compound semiconductor K Hiramatsu, H Miyake, S Bohyama, T Maeda, Y Iyechika
US Patent 6,756,246, 2004
102 2004 Impacts of Si-doping and resultant cation vacancy formation on the luminescence dynamics for the near-band-edge emission of Al0.6 Ga0.4 N films grown on AlN … SF Chichibu, H Miyake, Y Ishikawa, M Tashiro, T Ohtomo, K Furusawa, ...
Journal of Applied Physics 113 (21), 213506, 2013
98 2013 Optical constants of T Kawashima, S Adachi, H Miyake, K Sugiyama
Journal of applied physics 84 (9), 5202-5209, 1998
98 1998 Sharp band edge photoluminescence of high-purity K Yoshino, T Ikari, S Shirakata, H Miyake, K Hiramatsu
Applied Physics Letters 78 (6), 742-744, 2001
92 2001 Preparation of Cu2ZnSnS4 single crystals from Sn solutions A Nagaoka, K Yoshino, H Taniguchi, T Taniyama, H Miyake
Journal of Crystal Growth 341 (1), 38-41, 2012
89 2012 Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al0. 6Ga0. 4N/AlN/sapphire K Sato, S Yasue, K Yamada, S Tanaka, T Omori, S Ishizuka, S Teramura, ...
Applied Physics Express 13 (3), 031004, 2020
88 2020 Group III-V compound semiconductor and method of producing the same K Hiramatsu, H Miyake, T Maeda, Y Iyechika
US Patent 6,503,610, 2003
87 2003 Correlation between intrinsic defects and electrical properties in the high-quality Cu2 ZnSnS4 single crystal A Nagaoka, H Miyake, T Taniyama, K Kakimoto, K Yoshino
Applied Physics Letters 103 (11), 112107, 2013
82 2013 Raman scattering spectroscopy of residual stresses in epitaxial AlN films S Yang, R Miyagawa, H Miyake, K Hiramatsu, H Harima
Applied physics express 4 (3), 031001, 2011
77 2011 Optical and crystalline properties of epitaxial-lateral-overgrown-GaN using tungsten mask by hydride vapor phase epitaxy HSH Sone, SNS Nambu, YKY Kawaguchi, MYM Yamaguchi, ...
Japanese journal of applied physics 38 (4A), L356, 1999
76 1999 Improvement mechanism of sputtered AlN films by high-temperature annealing S Xiao, R Suzuki, H Miyake, S Harada, T Ujihara
Journal of Crystal Growth 502, 41-44, 2018
74 2018 Reduction of threading dislocation density and suppression of cracking in sputter-deposited AlN templates annealed at high temperatures K Uesugi, Y Hayashi, K Shojiki, H Miyake
Applied Physics Express 12 (6), 065501, 2019
66 2019 Fabrication of deep-ultraviolet-light-source tube using Si-doped AlGaN Y Shimahara, H Miyake, K Hiramatsu, F Fukuyo, T Okada, H Takaoka, ...
Applied physics express 4 (4), 042103, 2011
66 2011 