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Hideto Miyake
Hideto Miyake
Bestätigte E-Mail-Adresse bei elec.mie-u.ac.jp - Startseite
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Zitiert von
Jahr
Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)
K Hiramatsu, K Nishiyama, M Onishi, H Mizutani, M Narukawa, ...
Journal of Crystal Growth 221 (1-4), 316-326, 2000
5192000
Recent progress in selective area growth and epitaxial lateral overgrowth of III‐nitrides: effects of reactor pressure in MOVPE growth
K Hiramatsu, K Nishiyama, A Motogaito, H Miyake, Y Iyechika, T Maeda
physica status solidi (a) 176 (1), 535-543, 1999
3571999
Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing
H Miyake, CH Lin, K Tokoro, K Hiramatsu
Journal of Crystal Growth 456, 155-159, 2016
2342016
Annealing of an AlN buffer layer in N2–CO for growth of a high-quality AlN film on sapphire
H Miyake, G Nishio, S Suzuki, K Hiramatsu, H Fukuyama, J Kaur, ...
Applied Physics Express 9 (2), 025501, 2016
1772016
AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire
N Susilo, S Hagedorn, D Jaeger, H Miyake, U Zeimer, C Reich, ...
Applied Physics Letters 112 (4), 041110, 2018
1712018
Effects of sodium on electrical properties in Cu2ZnSnS4 single crystal
A Nagaoka, H Miyake, T Taniyama, K Kakimoto, Y Nose, MA Scarpulla, ...
Applied Physics Letters 104 (15), 152101, 2014
1362014
Effects of reactor pressure on epitaxial lateral overgrowth of GaN via low-pressure metalorganic vapor phase epitaxy
H Miyake, A Motogaito, K Hiramatsu
Japanese journal of applied physics 38 (9A), L1000, 1999
1211999
Method for fabricating III-V group compound semiconductor
K Hiramatsu, H Miyake, S Bohyama, T Maeda, Y Iyechika
US Patent 6,756,246, 2004
1022004
Impacts of Si-doping and resultant cation vacancy formation on the luminescence dynamics for the near-band-edge emission of Al0.6Ga0.4N films grown on AlN …
SF Chichibu, H Miyake, Y Ishikawa, M Tashiro, T Ohtomo, K Furusawa, ...
Journal of Applied Physics 113 (21), 213506, 2013
982013
Optical constants of and
T Kawashima, S Adachi, H Miyake, K Sugiyama
Journal of applied physics 84 (9), 5202-5209, 1998
981998
Sharp band edge photoluminescence of high-purity single crystals
K Yoshino, T Ikari, S Shirakata, H Miyake, K Hiramatsu
Applied Physics Letters 78 (6), 742-744, 2001
922001
Preparation of Cu2ZnSnS4 single crystals from Sn solutions
A Nagaoka, K Yoshino, H Taniguchi, T Taniyama, H Miyake
Journal of Crystal Growth 341 (1), 38-41, 2012
892012
Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al0. 6Ga0. 4N/AlN/sapphire
K Sato, S Yasue, K Yamada, S Tanaka, T Omori, S Ishizuka, S Teramura, ...
Applied Physics Express 13 (3), 031004, 2020
882020
Group III-V compound semiconductor and method of producing the same
K Hiramatsu, H Miyake, T Maeda, Y Iyechika
US Patent 6,503,610, 2003
872003
Correlation between intrinsic defects and electrical properties in the high-quality Cu2ZnSnS4 single crystal
A Nagaoka, H Miyake, T Taniyama, K Kakimoto, K Yoshino
Applied Physics Letters 103 (11), 112107, 2013
822013
Raman scattering spectroscopy of residual stresses in epitaxial AlN films
S Yang, R Miyagawa, H Miyake, K Hiramatsu, H Harima
Applied physics express 4 (3), 031001, 2011
772011
Optical and crystalline properties of epitaxial-lateral-overgrown-GaN using tungsten mask by hydride vapor phase epitaxy
HSH Sone, SNS Nambu, YKY Kawaguchi, MYM Yamaguchi, ...
Japanese journal of applied physics 38 (4A), L356, 1999
761999
Improvement mechanism of sputtered AlN films by high-temperature annealing
S Xiao, R Suzuki, H Miyake, S Harada, T Ujihara
Journal of Crystal Growth 502, 41-44, 2018
742018
Reduction of threading dislocation density and suppression of cracking in sputter-deposited AlN templates annealed at high temperatures
K Uesugi, Y Hayashi, K Shojiki, H Miyake
Applied Physics Express 12 (6), 065501, 2019
662019
Fabrication of deep-ultraviolet-light-source tube using Si-doped AlGaN
Y Shimahara, H Miyake, K Hiramatsu, F Fukuyo, T Okada, H Takaoka, ...
Applied physics express 4 (4), 042103, 2011
662011
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