Hari Prasad Amanapu
Hari Prasad Amanapu
Advisory Engineer/Unit Process Engineer, IBM
Verified email at us.ibm.com
Title
Cited by
Cited by
Year
A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels
R Xie, P Montanini, K Akarvardar, N Tripathi, B Haran, S Johnson, T Hook, ...
2016 IEEE International Electron Devices Meeting (IEDM), 2.7. 1-2.7. 4, 2016
892016
Cobalt polishing with reduced galvanic corrosion at copper/cobalt interface using hydrogen peroxide as an oxidizer in colloidal silica-based slurries
BC Peethala, HP Amanapu, URK Lagudu, SV Babu
Journal of The Electrochemical Society 159 (6), H582, 2012
652012
Role of guanidine carbonate and crystal orientation on chemical mechanical polishing of ruthenium films
HP Amanapu, KV Sagi, LG Teugels, SV Babu
ECS Journal of Solid State Science and Technology 2 (11), P445, 2013
402013
Investigation of percarbonate based slurry chemistry for controlling galvanic corrosion during CMP of ruthenium
MC Turk, SE Rock, HP Amanapu, LG Teugels, D Roy
ECS Journal of Solid State Science and Technology 2 (5), P205, 2013
362013
Citric acid as a complexing agent in chemical mechanical polishing slurries for cobalt films for interconnect applications
R Popuri, KV Sagi, SR Alety, BC Peethala, H Amanapu, R Patlolla, ...
ECS Journal of Solid State Science and Technology 6 (9), P594, 2017
332017
Role of hydrogen bonding on the adsorption of several amino acids on SiO2 and Si3N4 and selective polishing of these materials using ceria dispersions
NK Penta, BC Peethala, HP Amanapu, A Melman, SV Babu
Colloids and Surfaces A: Physicochemical and Engineering Aspects 429, 67-73, 2013
272013
Parasitic resistance reduction strategies for advanced CMOS FinFETs beyond 7nm
H Wu, O Gluschenkov, G Tsutsui, C Niu, K Brew, C Durfee, C Prindle, ...
2018 IEEE International Electron Devices Meeting (IEDM), 35.4. 1-35.4. 4, 2018
212018
Silicon nitride film removal during chemical mechanical polishing using ceria-based dispersions
PRV Dandu, BC Peethala, HP Amanapu, SV Babu
Journal of The Electrochemical Society 158 (8), H763, 2011
192011
Potassium oleate as a dissolution and corrosion inhibitor during chemical mechanical planarization of chemical vapor deposited Co films for interconnect applications
R Popuri, H Amanapu, CK Ranaweera, NK Baradanahalli, SV Babu
ECS Journal of Solid State Science and Technology 6 (12), P845, 2017
172017
Investigation of guanidine carbonate-based slurries for chemical mechanical polishing of Ru/TiN barrier films with minimal corrosion
KV Sagi, HP Amanapu, LG Teugels, SV Babu
ECS Journal of Solid State Science and Technology 3 (7), P227, 2014
162014
Use of anionic surfactants for selective polishing of silicon dioxide over silicon nitride films using colloidal silica-based slurries
NK Penta, HP Amanapu, BC Peethala, SV Babu
Applied surface science 283, 986-992, 2013
162013
Potassium permanganate-based slurry to reduce the galvanic corrosion of the Cu/Ru/TiN barrier liner stack during CMP in the BEOL interconnects
KV Sagi, HP Amanapu, SR Alety, SV Babu
ECS Journal of Solid State Science and Technology 5 (5), P256, 2016
132016
Alternative smoothing techniques to mitigate EUV substrate defectivity
R Teki, AJ Kadaksham, M House, J Harris-Jones, A Ma, SV Babu, ...
Extreme Ultraviolet (EUV) Lithography III 8322, 83220B, 2012
112012
Annealing and Impurity Effects in Co Thin Films for MOL Contact and BEOL Metallization
J Kelly, V Kamineni, X Lin, A Pacquette, M Hopstaken, Y Liang, ...
Journal of the Electrochemical Society 166 (1), D3100, 2018
82018
Further investigation of slurry additives for selective polishing of SiO2 films over Si3N4 using ceria dispersions
NK Penta, HP Amanapu, SV Babu
ECS Journal of Solid State Science and Technology 4 (11), P5025, 2015
82015
Method and composition
C Colaco
US Patent App. 10/204,829, 2005
52005
Material-and polishing induced defectivity on EUV mask substrates
R Teki, A John-Kadaksham, A Ma, F Goodwin, T Yatsui, M Ohtsu, ...
EUVL Symposium Brussels, 2012
42012
Self-Allancd Gate Contact (SAGC) for CMOS technology scaling beyond 7nm
R Xie, C Park, R Conti, R Robison, H Zhou, I Saraf, A Carr, SSC Fan, ...
2019 Symposium on VLSI Technology, T148-T149, 2019
32019
Abrasive-free planarization for EUV mask substrates
SV Babu, H Amanapu, URK Laguda, T Ranganath
US Patent 9,097,994, 2015
22015
Cobalt contact and interconnect structures
HP Amanapu, RR Patlolla, CB Peethala, C Yang
US Patent 10,373,867, 2019
12019
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