Simone Assali
Cited by
Cited by
Direct band gap wurtzite gallium phosphide nanowires
S Assali, I Zardo, S Plissard, D Kriegner, MA Verheijen, G Bauer, ...
Nano letters 13 (4), 1559-1563, 2013
Hexagonal silicon realized
HIT Hauge, MA Verheijen, S Conesa-Boj, T Etzelstorfer, M Watzinger, ...
Nano letters 15 (9), 5855-5860, 2015
Efficient water reduction with gallium phosphide nanowires
A Standing, S Assali, L Gao, MA Verheijen, D Van Dam, Y Cui, ...
Nature communications 6 (1), 1-7, 2015
Atomic layer deposition of Pd and Pt nanoparticles for catalysis: on the mechanisms of nanoparticle formation
AJM Mackus, MJ Weber, NFW Thissen, D Garcia-Alonso, RHJ Vervuurt, ...
Nanotechnology 27 (3), 034001, 2015
Growth and Optical Properties of Direct Band Gap Ge/Ge0.87Sn0.13 Core/Shell Nanowire Arrays
S Assali, A Dijkstra, A Li, S Koelling, MA Verheijen, L Gagliano, ...
Nano letters 17 (3), 1538-1544, 2017
Atomically uniform Sn-rich GeSn semiconductors with 3.0–3.5 μm room-temperature optical emission
S Assali, J Nicolas, S Mukherjee, A Dijkstra, O Moutanabbir
Applied Physics Letters 112 (25), 251903, 2018
Exploring crystal phase switching in GaP nanowires
S Assali, L Gagliano, DS Oliveira, MA Verheijen, SR Plissard, LF Feiner, ...
Nano Letters 15 (12), 8062-8069, 2015
Enhanced Sn incorporation in GeSn epitaxial semiconductors via strain relaxation
S Assali, J Nicolas, O Moutanabbir
Journal of Applied Physics 125 (2), 025304, 2019
Atom-by-atom analysis of semiconductor nanowires with parts per million sensitivity
S Koelling, A Li, A Cavalli, S Assali, D Car, S Gazibegovic, E Bakkers, ...
Nano letters 17 (2), 599-605, 2017
Monolithic infrared silicon photonics: the rise of (Si) GeSn semiconductors
O Moutanabbir, S Assali, X Gong, E O'Reilly, CA Broderick, B Marzban, ...
Applied Physics Letters 118 (11), 110502, 2021
Optical properties of strained wurtzite gallium phosphide nanowires
J Greil, S Assali, Y Isono, A Belabbes, F Bechstedt, FO Valega Mackenzie, ...
Nano letters 16 (6), 3703-3709, 2016
Optical study of the band structure of wurtzite GaP nanowires
S Assali, J Greil, I Zardo, A Belabbes, MWA De Moor, S Koelling, ...
Journal of Applied Physics 120 (4), 044304, 2016
Unit cell structure of the wurtzite phase of GaP nanowires: X-ray diffraction studies and density functional theory calculations
D Kriegner, S Assali, A Belabbes, T Etzelstorfer, V Holý, T Schülli, ...
Physical Review B 88 (11), 115315, 2013
Critical strain for Sn incorporation into spontaneously graded Ge/GeSn core/shell nanowires
M Albani, S Assali, MA Verheijen, S Koelling, R Bergamaschini, F Pezzoli, ...
Nanoscale 10 (15), 7250-7256, 2018
Harnessing nuclear spin polarization fluctuations in a semiconductor nanowire
P Peddibhotla, F Xue, HIT Hauge, S Assali, E Bakkers, M Poggio
Nature Physics 9 (10), 631-635, 2013
Cracking the Si Shell growth in hexagonal GaP-Si core–shell nanowires
S Conesa-Boj, HIT Hauge, MA Verheijen, S Assali, A Li, E Bakkers, ...
Nano letters 15 (5), 2974-2979, 2015
All‐Group IV Transferable Membrane Mid‐Infrared Photodetectors
MRM Atalla, S Assali, A Attiaoui, C Lemieux‐Leduc, A Kumar, S Abdi, ...
Advanced Functional Materials 31 (3), 2006329, 2021
Vacancy complexes in nonequilibrium germanium-tin semiconductors
S Assali, M Elsayed, J Nicolas, MO Liedke, A Wagner, M Butterling, ..., 2019
High yield transfer of ordered nanowire arrays into transparent flexible polymer films
AJ Standing, S Assali, JEM Haverkort, E Bakkers
Nanotechnology 23 (49), 495305, 2012
Pseudodirect to Direct Compositional Crossover in Wurtzite GaP/InxGa1–xP Core–Shell Nanowires
L Gagliano, A Belabbes, M Albani, S Assali, MA Verheijen, L Miglio, ...
Nano letters 16 (12), 7930-7936, 2016
The system can't perform the operation now. Try again later.
Articles 1–20