| Ferroelectric field-effect transistors based on HfO2: a review H Mulaosmanovic, ET Breyer, S Dünkel, S Beyer, T Mikolajick, ... Nanotechnology 32 (50), 502002, 2021 | 212 | 2021 |
| Ferroelectric FETs With 20-nm-Thick HfO2 Layer for Large Memory Window and High Performance H Mulaosmanovic, ET Breyer, T Mikolajick, S Slesazeck IEEE Transactions on Electron Devices 66 (9), 3828-3833, 2019 | 150 | 2019 |
| FeFET: A versatile CMOS compatible device with game-changing potential S Beyer, S Dünkel, M Trentzsch, J Müller, A Hellmich, D Utess, J Paul, ... 2020 IEEE International Memory Workshop (IMW), 1-4, 2020 | 137 | 2020 |
| Demonstration of BEOL-compatible ferroelectric Hf0.5Zr0.5O2 scaled FeRAM co-integrated with 130nm CMOS for embedded NVM applications T Francois, L Grenouillet, J Coignus, P Blaise, C Carabasse, N Vaxelaire, ... 2019 IEEE International Electron Devices Meeting (IEDM), 15.7. 1-15.7. 4, 2019 | 114 | 2019 |
| Reconfigurable NAND/NOR logic gates in 28 nm HKMG and 22 nm FD-SOI FeFET technology ET Breyer, H Mulaosmanovic, T Mikolajick, S Slesazeck 2017 IEEE International Electron Devices Meeting (IEDM), 28.5. 1-28.5. 4, 2017 | 91 | 2017 |
| Computing with ferroelectric FETs: Devices, models, systems, and applications A Aziz, ET Breyer, A Chen, X Chen, S Datta, SK Gupta, M Hoffmann, ... 2018 Design, Automation & Test in Europe Conference & Exhibition (DATE …, 2018 | 88 | 2018 |
| Recovery of cycling endurance failure in ferroelectric FETs by self-heating H Mulaosmanovic, ET Breyer, T Mikolajick, S Slesazeck IEEE Electron Device Letters 40 (2), 216-219, 2018 | 65 | 2018 |
| Impact of Read Operation on the Performance of HfO2-Based Ferroelectric FETs H Mulaosmanovic, S Dünkel, J Müller, M Trentzsch, S Beyer, ET Breyer, ... IEEE Electron Device Letters 41 (9), 1420-1423, 2020 | 64 | 2020 |
| A computational study of hafnia-based ferroelectric memories: from ab initio via physical modeling to circuit models of ferroelectric device M Pešić, C Künneth, M Hoffmann, H Mulaosmanovic, S Müller, ET Breyer, ... Journal of Computational Electronics 16 (4), 1236-1256, 2017 | 55 | 2017 |
| Perspective on ferroelectric, hafnium oxide based transistors for digital beyond von-Neumann computing ET Breyer, H Mulaosmanovic, T Mikolajick, S Slesazeck Applied Physics Letters 118 (5), 2021 | 48 | 2021 |
| Investigation of Accumulative Switching in Ferroelectric FETs: Enabling Universal Modeling of the Switching Behavior H Mulaosmanovic, S Dünkel, M Trentzsch, S Beyer, ET Breyer, ... IEEE Transactions on Electron Devices 67 (12), 5804-5809, 2020 | 48 | 2020 |
| Reconfigurable frequency multiplication with a ferroelectric transistor H Mulaosmanovic, ET Breyer, T Mikolajick, S Slesazeck Nature Electronics 3 (7), 391-397, 2020 | 47 | 2020 |
| Interplay Between Switching and Retention in HfO2-Based Ferroelectric FETs H Mulaosmanovic, F Müller, M Lederer, T Ali, R Hoffmann, K Seidel, ... IEEE Transactions on Electron Devices 67 (8), 3466-3471, 2020 | 44 | 2020 |
| Compact FeFET circuit building blocks for fast and efficient nonvolatile logic-in-memory ET Breyer, H Mulaosmanovic, J Trommer, T Melde, S Dünkel, M Trentzsch, ... IEEE Journal of the Electron Devices Society 8, 748-756, 2020 | 41 | 2020 |
| Next Generation Ferroelectric Memories enabled by Hafnium Oxide T Mikolajick, U Schroeder, PD Lomenzo, ET Breyer, H Mulaosmanovic, ... 2019 IEEE International Electron Devices Meeting (IEDM), 15.5. 1-15.5. 4, 2019 | 36 | 2019 |
| A 2TnC ferroelectric memory gain cell suitable for compute-in-memory and neuromorphic application S Slesazeck, T Ravsher, V Havel, ET Breyer, H Mulaosmanovic, ... 2019 IEEE International Electron Devices Meeting (IEDM), 38.6. 1-38.6. 4, 2019 | 31 | 2019 |
| Uniting The Trinity of Ferroelectric HfO2 Memory Devices in a Single Memory Cell S Slesazeck, V Havel, E Breyer, H Mulaosmanovic, M Hoffmann, B Max, ... 2019 IEEE 11th International Memory Workshop (IMW), 1-4, 2019 | 27 | 2019 |
| Demonstration of versatile nonvolatile logic gates in 28nm HKMG FeFET technology ET Breyer, H Mulaosmanovic, S Slesazeck, T Mikolajick 2018 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5, 2018 | 27 | 2018 |
| Polarization-based configurable logic gate S Slesazeck, H Mulaosmanovic, E Breyer US Patent 10,424,379, 2019 | 18 | 2019 |
| Switching and Charge Trapping in HfO2-based Ferroelectric FETs: An Overview and Potential Applications H Mulaosmanovic, ET Breyer, T Mikolajick, S Slesazeck 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-4, 2020 | 17 | 2020 |
