| Characterisation of MOS Transistors as an Electromechanical Transducer for Stress N Hafez, S Haas, KU Loebel, D Reuter, M Ramsbeck, M Schramm, ... physica status solidi (a), 2018 | 14 | 2018 |
| Ge nanoparticle formation by thermal treatment of rf-sputtered ZrO2/ZrGe2O3 superlattices S Haas, F Schneider, C Himcinschi, V Klemm, G Schreiber, J Von Borany, ... Journal of Applied Physics 113 (4), 2013 | 11 | 2013 |
| Analysis of Au metal–metal contacts in a lateral actuated RF MEMS switch M Gaitzsch, S Kurth, S Voigt, S Haas, T Gessner International Journal of Microwave and Wireless Technologies 6 (5), 481-486, 2014 | 6 | 2014 |
| Semiconductor nanocrystals embedded in high-k materials F Benner, S Haas, F Schneider, V Klemm, G Schreiber, J Von Borany, ... ECS Transactions 45 (3), 9, 2012 | 4 | 2012 |
| Direct integrated strain sensors for robust temperature behaviour S Haas, M Schramm, D Reuter, KU Loebel, JT Horstmann, T Gessner 2015 Transducers-2015 18th International Conference on Solid-State Sensors …, 2015 | 2 | 2015 |
| Silicon and germanium nanoclusters embedded in zirconium dioxide matrices F Benner, S Haas, F Schneider, V Klemm, G Schreiber, J von Borany, ... ECS Journal of Solid State Science and Technology 1 (6), N135, 2012 | 2 | 2012 |
| Spray-coatable negative photoresist for high topography MEMS applications M Arnold, A Voigt, S Haas, F Schwenzer, G Schwenzer, D Reuter, ... Journal of Micromechanics and Microengineering 27 (3), 035016, 2017 | 1 | 2017 |
| Direct integration of field effect transistors as electro mechanical transducer for stress S Haas, D Reuter, A Bertz, T Gessner, M Schramm, KU Loebel, ... Sensing Technology (ICST), 2013 Seventh International Conference on, 379-382, 2013 | 1 | 2013 |
| Direct Integration of Field Effect Transistors as Electro Mechanical Transducer for Stress on Beam Structures S Haas, N Hafez, KH Loebel, E Koegel, M Ramsbeck, D Reuter, ... Micro-Nano-Integration; 6. GMM-Workshop, 1-4, 2016 | | 2016 |
| Novel through silicon wiring technology using dry etched sloping vertical terminals S Haas, S Voigt, M Arnold, F Schwenzer, M Braunschweig, M Küchler, ... | | 2016 |
| Microelectromechanical switch and method for manufacturing the same S Kurth, S Voigt, S Haas, K Ikeda, A Akiba | | 2016 |
| RF MEMS Switch for Modulated Backscatter Communication M Gaitzsch, S Voigt, S Haas, S Kurth, T Gessner | | 2015 |
| MICROWAVE AND WIRELESS TECHNOLOGIES M Kaynak, P Blondy, SA Figur, F Van Raay, R Quay, L Vietzorreck, ... | | 2014 |
| Integration von MOS-Transistoren als Wandler für mechanische Spannungen M Schramm, S Haas, D Reuter, KU Loebel, S Heinz, A Bertz, ... | | 2014 |
| Analysis of metal-metal contacts in RF MEMS switches S Kurth, S Voigt, S Haas, A Bertz, C Kaufmann, T Gessner, A Akiba, ... SPIE MOEMS-MEMS, 861403-861403-12, 2013 | | 2013 |
| Direktintegration von Feldeffekttransistoren als elektromechanische Wandler für mechanische Spannungen S Haas, M Schramm, S Heinz, KU Loebel, D Reuter, A Bertz, ... Mikrosystemtechnik 2013, 2013 | | 2013 |
| Low-band gap nanoparticles embedded in high-K dielectrics T Nestler, S Haas, R Otto, F Schneider, SG Hickey, S Gabriel, ... COMMAD 2012, 123-124, 2012 | | 2012 |
Danny ReuterHead of Nano Device Technologies, Fraunhofer ENAS, ChemnitzBestätigte E-Mail-Adresse bei enas.fraunhofer.de
