| Doping profile analysis in Si by electrochemical capacitance‐voltage measurements E Peiner, A Schlachetzki, D Krüger Journal of the Electrochemical Society 142 (2), 576, 1995 | 171 | 1995 |
| Optical parameters of InP-based waveguides F Fiedler, A Schlachetzki Solid-state electronics 30 (1), 73-83, 1987 | 161 | 1987 |
| A micromachined vibration sensor based on the control of power transmitted between optical fibres E Peiner, D Scholz, A Schlachetzki, P Hauptmann Sensors and Actuators A: Physical 65 (1), 23-29, 1998 | 68 | 1998 |
| Electron-concentration dependence of absorption and refraction in n-In0.53Ga0.47As near the band-edge D Hahn, O Jaschinski, HH Wehmann, A Schlachetzki, M Von Ortenberg Journal of electronic materials 24, 1357-1361, 1995 | 67 | 1995 |
| Shubnikov-de Haas effect and effective mass inn-InP in dependence on carrier concentration D Schneider, D Rürup, A Plichta, HU Grubert, A Schlachetzki, K Hansen Zeitschrift für Physik B Condensed Matter 95, 281-285, 1994 | 48 | 1994 |
| Anodic Dissolution during Electrochemical Carrier‐Concentration Profiling of Silicon E Peiner, A Schlachetzki Journal of The Electrochemical Society 139 (2), 552, 1992 | 47 | 1992 |
| Methods of characterising micro mechanical beams and its calibration for the application in micro force measurement systems W Hoffmann, S Loheide, T Kleine-Besten, U Brand, A Schlachetzki Proc. MicroTec, 819-823, 2000 | 38 | 2000 |
| Wet Chemical Etching of Alignment V‐Grooves in (100) InP through Titanium or In0. 53Ga0. 47As Masks R Klockenbrink, E Peiner, HH Wehmann, A Schlachetzki Journal of the Electrochemical Society 141 (6), 1594, 1994 | 38 | 1994 |
| Impurity conduction and magnetoresistance in lightly dopedn-type GaAs H Kahlert, G Landwehr, A Schlachetzki, H Salow Zeitschrift für Physik B Condensed Matter 24 (4), 361-365, 1976 | 38 | 1976 |
| Gunn device gigabit rate digital microcircuits K Mause, A Schlachetzki, E Hesse, H Salow IEEE Journal of Solid-State Circuits 10 (1), 2-12, 1975 | 38 | 1975 |
| A low-frequency micromechanical resonant vibration sensor for wear monitoring H Fritsch, R Lucklum, T Iwert, P Hauptmann, D Scholz, E Peiner, ... Sensors and Actuators A: Physical 62 (1-3), 616-620, 1997 | 36 | 1997 |
| Material-selective etching of InP and an InGaAsP alloy F Fiedler, A Schlachetzki, G Klein Journal of Materials Science 17, 2911-2918, 1982 | 34 | 1982 |
| Radar sensor and radar antenna for monitoring the environment of a motor vehicle E Lissel, A Jacob, A Schlachetzki, HH Wehmann, E Peiner, H Schroeter, ... US Patent 6,686,867, 2004 | 32 | 2004 |
| Monolithic InGaAsP optoelectronic devices with silicon electronics D Fehly, A Schlachetzki, AS Bakin, A Guttzeit, HH Wehmann IEEE journal of quantum electronics 37 (10), 1246-1252, 2001 | 32 | 2001 |
| Ultrasmooth V‐Grooves in InP by Two‐Step Wet Chemical Etching P Bönsch, D Wüllner, T Schrimpf, A Schlachetzki, R Lacmann Journal of the Electrochemical Society 145 (4), 1273, 1998 | 32 | 1998 |
| Incorporation of Sn into epitaxial GaAs grown from the liquid phase E Kuphal, A Schlachetzki, A Pöcker Applied physics 17, 63-72, 1978 | 30 | 1978 |
| Growth of InP layers on nanometer-scale patterned Si substrates A Bakin, D Piester, I Behrens, HH Wehmann, E Peiner, A Ivanov, D Fehly, ... Crystal growth & design 3 (1), 89-93, 2003 | 29 | 2003 |
| Laser-action in V-groove-shaped InGaAs-InP single quantum wires D Piester, P Bonsch, T Schrimpf, HH Wehmann, A Schlachetzki IEEE Journal of Selected Topics in Quantum Electronics 6 (3), 522-527, 2000 | 29 | 2000 |
| Transferred-electron domains in In0. 53Ga0. 47As in dependence on the the nl product W Kowalsky, A Schlachetzki, HH Wehmann Solid-state electronics 27 (2), 187-189, 1984 | 28 | 1984 |
| Optical absorption and refractive index near the band gap for InGaAsP W Kowalsky, HH Wehmann, F Fiedler, A Schlachetzki Phys. Status Solidi A;(German Democratic Republic) 77 (1), 1983 | 28 | 1983 |
