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Chirag Gupta
Chirag Gupta
Assistant Professor, UW Madison
Verified email at wisc.edu - Homepage
Title
Cited by
Cited by
Year
In Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) on Bulk GaN substrates
C Gupta, C Lund, SH Chan, A Agarwal, J Liu, Y Enatsu, S Keller, ...
IEEE Electron Device Letters 38 (3), 353-355, 2017
1612017
Demonstration of ultra-small (< 10 μm) 632 nm red InGaN micro-LEDs with useful on-wafer external quantum efficiency (> 0.2%) for mini-displays
SS Pasayat, C Gupta, MS Wong, R Ley, MJ Gordon, SP DenBaars, ...
Applied Physics Express 14 (1), 011004, 2020
1212020
OG-FET: An in-situ Oxide, GaN interlayer based vertical trench MOSFET
C Gupta, SH Chan, Y Enatsu, A Agarwal, S Keller, UK Mishra
IEEE ELECTRON DEVICE LETTERS 37 (12), 1601-1604, 2016
782016
Demonstrating> 1.4 kV OG-FET performance with a novel double field-plated geometry and the successful scaling of large-area devices
D Ji, C Gupta, SH Chan, A Agarwal, W Li, S Keller, UK Mishra, ...
Electron Devices Meeting (IEDM), 2017 IEEE International, 9.4. 1-9.4. 4, 2017
712017
Large-Area In-Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET)
D Ji, C Gupta, A Agarwal, SH Chan, C Lund, W Li, S Keller, UK Mishra, ...
IEEE Electron Device Letters 39 (5), 711, 2018
652018
High breakdown voltage p–n diodes on GaN on sapphire by MOCVD
C Gupta, Y Enatsu, G Gupta, S Keller, UK Mishra
physica status solidi (a) 213 (4), 878-882, 2016
642016
Comparing electrical performance of GaN trench-gate MOSFETs with a-plane and m-plane sidewall channels
C Gupta, C Silvia, L Cory, A Anchal, K Onur S., J Liu, Y Enatsu, S Keller, ...
Applied Physics Express 9 (12), 121001-1-3, 2016
592016
Color-tunable< 10 μm square InGaN micro-LEDs on compliant GaN-on-porous-GaN pseudo-substrates
SS Pasayat, R Ley, C Gupta, MS Wong, C Lynsky, Y Wang, MJ Gordon, ...
Applied Physics Letters 117 (6), 2020
522020
Growth of strain-relaxed InGaN on micrometer-sized patterned compliant GaN pseudo-substrates
SS Pasayat, C Gupta, MS Wong, Y Wang, S Nakamura, SP Denbaars, ...
Applied Physics Letters 116 (11), 2020
522020
Fabrication of relaxed InGaN pseudo-substrates composed of micron-sized pattern arrays with high fill factors using porous GaN
SS Pasayat, C Gupta, D Acker-James, DA Cohen, SP DenBaars, ...
Semiconductor Science and Technology 34 (11), 115020, 2019
472019
Demonstration of a GaN/AlGaN superlattice-based p-channel FinFET with high ON-current
A Raj, A Krishna, N Hatui, C Gupta, R Jang, S Keller, UK Mishra
IEEE Electron Device Letters 41 (2), 220-223, 2020
422020
First demonstration of AlSiO as gate dielectric in GaN FETs; applied to a high performance OG-FET
C Gupta, SH Chan, A Agarwal, N Hatui, S Keller, UK Mishra
IEEE Electron Device Letters 38 (11), 1575-1578, 2017
422017
High-field transport in a graphene nanolayer
VK Arora, MLP Tan, C Gupta
Journal of Applied Physics 112 (11), 2012
312012
Compliant micron-sized patterned InGaN pseudo-substrates utilizing porous GaN
SS Pasayat, C Gupta, Y Wang, SP DenBaars, S Nakamura, S Keller, ...
Materials 13 (1), 213, 2020
302020
Trenched vertical power field-effect transistors with improved on-resistance and breakdown voltage
S Chowdhury, J Kim, C Gupta, S Keller, SH Chan, UK Mishra
US Patent 10,312,361, 2019
302019
Metalorganic chemical vapor deposition and characterization of (Al, Si) O dielectrics for GaN-based devices
SH Chan, M Tahhan, X Liu, D Bisi, C Gupta, O Koksaldi, H Li, T Mates, ...
Japanese Journal of Applied Physics 55 (2), 021501, 2016
302016
Improved Dynamic RON of GaN Vertical Trench MOSFETs (OG-FETs) Using TMAH Wet Etch
D Ji, W Li, A Agarwal, SH Chan, J Haller, D Bisi, M Labrecque, C Gupta, ...
IEEE Electron Device Letters 39 (7), 1030-1033, 2018
272018
An improved methodology for extracting interface state density at Si3N4/GaN
W Liu, I Sayed, C Gupta, H Li, S Keller, U Mishra
Applied Physics Letters 116 (2), 2020
252020
Infant weeping calls decoder using statistical feature extraction and gaussian mixture models
K Sharma, C Gupta, S Gupta
2019 10th International Conference on Computing, Communication and …, 2019
232019
First demonstration of RF N-polar GaN MIS-HEMTs grown on bulk GaN using PAMBE
SS Pasayat, E Ahmadi, B Romanczyk, O Koksaldi, A Agarwal, M Guidry, ...
Semiconductor Science and Technology 34 (4), 045009, 2019
212019
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