| Interdiffusion of In and Ga in InGaN quantum wells MD McCluskey, LT Romano, BS Krusor, NM Johnson, T Suski, J Jun Applied physics letters 73 (9), 1281-1283, 1998 | 97 | 1998 |
| Phase separation in InGaN multiple quantum wells annealed at high nitrogen pressures LT Romano, MD McCluskey, CG Van de Walle, JE Northrup, DP Bour, ... Applied Physics Letters 75 (25), 3950-3952, 1999 | 56 | 1999 |
| Comparison of static and dynamic 18F-FDG PET/CT for quantification of pulmonary inflammation in acute lung injury A Braune, F Hofheinz, T Bluth, T Kiss, J Wittenstein, M Scharffenberg, ... Journal of Nuclear Medicine 60 (11), 1629-1634, 2019 | 55* | 2019 |
| InGaN laser diode mini-arrays P Perlin, L Marona, K Holc, P Wisniewski, T Suski, M Leszczynski, ... Applied physics express 4 (6), 062103, 2011 | 45 | 2011 |
| Application of a composite plasmonic substrate for the suppression of an electromagnetic mode leakage in InGaN laser diodes P Perlin, K Holc, M Sarzyński, W Scheibenzuber, Ł Marona, R Czernecki, ... Applied Physics Letters 95 (26), 2009 | 41 | 2009 |
| High-optical-power InGaN superluminescent diodes with “j-shape” waveguide A Kafar, S Stanczyk, G Targowski, T Oto, I Makarowa, P Wisniewski, ... Applied Physics Express 6 (9), 092102, 2013 | 39 | 2013 |
| Role of conduction-band filling in the dependence of InN photoluminescence on hydrostatic pressure A Kamińska, G Franssen, T Suski, I Gorczyca, NE Christensen, A Svane, ... Physical Review B 76 (7), 075203, 2007 | 35 | 2007 |
| Hydrogen diffusion in GaN: Mg and GaN: Si R Czernecki, E Grzanka, R Jakiela, S Grzanka, C Skierbiszewski, H Turski, ... Journal of Alloys and Compounds 747, 354-358, 2018 | 30 | 2018 |
| Influence of hydrogen and TMIn on indium incorporation in MOVPE growth of InGaN layers R Czernecki, S Kret, P Kempisty, E Grzanka, J Plesiewicz, G Targowski, ... Journal of crystal growth 402, 330-336, 2014 | 30 | 2014 |
| Nitride‐based quantum structures and devices on modified GaN substrates P Perlin, G Franssen, J Szeszko, R Czernecki, G Targowski, M Kryśko, ... physica status solidi (a) 206 (6), 1130-1134, 2009 | 30 | 2009 |
| AlGaInN laser diode technology for GHz high-speed visible light communication through plastic optical fiber and water SP Najda, P Perlin, T Suski, L Marona, M Leszczyński, P Wisniewski, ... Optical Engineering 55 (2), 026112-026112, 2016 | 29 | 2016 |
| Degradation mechanisms of InGaN laser diodes P Perlin, Ł Marona, M Leszczynski, T Suski, P Wisniewski, R Czernecki, ... Proceedings of the IEEE 98 (7), 1214-1219, 2010 | 27 | 2010 |
| Nitride superluminescent diodes with broadened emission spectrum fabricated using laterally patterned substrate A Kafar, S Stanczyk, M Sarzynski, S Grzanka, J Goss, G Targowski, ... Optics Express 24 (9), 9673-9682, 2016 | 26 | 2016 |
| Design and optimization of InGaN superluminescent diodes A Kafar, S Stańczyk, P Wiśniewski, T Oto, I Makarowa, G Targowski, ... physica status solidi (a) 212 (5), 997-1004, 2015 | 26 | 2015 |
| Highly doped GaN: a material for plasmonic claddings for blue/green InGaN laser diodes P Perlin, T Czyszanowski, L Marona, S Grzanka, A Kafar, S Stanczyk, ... Gallium Nitride Materials and Devices VII 8262, 161-168, 2012 | 20 | 2012 |
| Modelling the growth of nitrides in ammonia‐rich environment S Krukowski, P Kempisty, P Strąk, G Nowak, R Czernecki, M Leszczynski, ... Crystal Research and Technology: Journal of Experimental and Industrial …, 2007 | 17 | 2007 |
| Compositional and strain analysis of In (Ga) N/GaN short period superlattices GP Dimitrakopulos, IG Vasileiadis, C Bazioti, J Smalc-Koziorowska, S Kret, ... Journal of Applied Physics 123 (2), 2018 | 16 | 2018 |
| III-nitride optoelectronic devices containing wide quantum wells—unexpectedly efficient light sources G Muziol, M Hajdel, M Siekacz, H Turski, K Pieniak, A Bercha, ... Japanese Journal of Applied Physics 61 (SA), SA0801, 2021 | 15 | 2021 |
| InAlGaN superluminescent diodes fabricated on patterned substrates: an alternative semiconductor broadband emitter A Kafar, S Stanczyk, M Sarzynski, S Grzanka, J Goss, I Makarowa, ... Photonics Research 5 (2), A30-A34, 2017 | 15 | 2017 |
| GaN laser diode technology for visible-light communications SP Najda, P Perlin, T Suski, L Marona, M Leszczyński, P Wisniewski, ... Electronics 11 (9), 1430, 2022 | 14 | 2022 |
Piotr PerlinInstitute of High Pressure PhysicsBestätigte E-Mail-Adresse bei unipress.waw.pl
