Thomas Mikolajick
Thomas Mikolajick
Scientific Director, NaMLab GmbH and Professor for nanoelectronic materials, TU Dresden
Verified email at - Homepage
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Ferroelectricity in Simple Binary ZrO2 and HfO2
J Muller, TS Boscke, U Schroder, S Mueller, D Brauhaus, U Bottger, ...
Nano letters 12 (8), 4318-4323, 2012
Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films
MH Park, YH Lee, HJ Kim, YJ Kim, T Moon, KD Kim, J Mueller, A Kersch, ...
Advanced Materials 27 (11), 1811-1831, 2015
Incipient ferroelectricity in Al‐doped HfO2 thin films
S Mueller, J Mueller, A Singh, S Riedel, J Sundqvist, U Schroeder, ...
Advanced Functional Materials 22 (11), 2412-2417, 2012
Ferroelectricity in yttrium-doped hafnium oxide
J Müller, U Schröder, TS Böscke, I Müller, U Böttger, L Wilde, J Sundqvist, ...
Journal of Applied Physics 110 (11), 114113, 2011
Reconfigurable silicon nanowire transistors
A Heinzig, S Slesazeck, F Kreupl, T Mikolajick, WM Weber
Nano letters 12 (1), 119-124, 2012
Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications
J Müller, TS Böscke, D Bräuhaus, U Schröder, U Böttger, J Sundqvist, ...
Applied Physics Letters 99 (11), 112901, 2011
Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors
M Pešić, FPG Fengler, L Larcher, A Padovani, T Schenk, ED Grimley, ...
Advanced Functional Materials 26 (25), 4601-4612, 2016
Stabilizing the ferroelectric phase in doped hafnium oxide
M Hoffmann, U Schroeder, T Schenk, T Shimizu, H Funakubo, O Sakata, ...
Journal of Applied Physics 118 (7), 072006, 2015
Impact of different dopants on the switching properties of ferroelectric hafniumoxide
U Schroeder, E Yurchuk, J Müller, D Martin, T Schenk, P Polakowski, ...
Japanese Journal of Applied Physics 53 (8S1), 08LE02, 2014
Ferroelectric hafnium oxide based materials and devices: Assessment of current status and future prospects
J Müller, P Polakowski, S Mueller, T Mikolajick
ECS Journal of Solid State Science and Technology 4 (5), N30-N35, 2015
Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories
J Muller, TS Boscke, S Muller, E Yurchuk, P Polakowski, J Paul, D Martin, ...
Electron Devices Meeting (IEDM), 2013 IEEE International, 10.8. 1-10.8. 4, 2013
Phase transitions in ferroelectric silicon doped hafnium oxide
TS Böscke, S Teichert, D Bräuhaus, J Müller, U Schröder, U Böttger, ...
Applied Physics Letters 99 (11), 112904, 2011
Ferroelectricity in Gd-doped HfO2 thin films
S Mueller, C Adelmann, A Singh, S Van Elshocht, U Schroeder, ...
ECS Journal of Solid State Science and Technology 1 (6), N123, 2012
Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2
M Hoffmann, M Pešić, K Chatterjee, AI Khan, S Salahuddin, S Slesazeck, ...
Advanced Functional Materials 26 (47), 8643-8649, 2016
Ferroelectricity in HfO2enables nonvolatile data storage in 28 nm HKMG
J Müller, E Yurchuk, T Schlösser, J Paul, R Hoffmann, S Müller, D Martin, ...
2012 Symposium on VLSI Technology (VLSIT), 25-26, 2012
Co-sputtering yttrium into hafnium oxide thin films to produce ferroelectric properties
T Olsen, U Schröder, S Müller, A Krause, D Martin, A Singh, J Müller, ...
Applied Physics Letters 101 (8), 082905, 2012
Metal oxide memories based on thermochemical and valence change mechanisms
JJ Yang, IH Inoue, T Mikolajick, CS Hwang
MRS bulletin 37 (2), 131-137, 2012
Dually active silicon nanowire transistors and circuits with equal electron and hole transport
A Heinzig, T Mikolajick, J Trommer, D Grimm, WM Weber
Nano letters 13 (9), 4176-4181, 2013
FeRAM technology for high density applications
T Mikolajick, C Dehm, W Hartner, I Kasko, MJ Kastner, N Nagel, M Moert, ...
Microelectronics Reliability 41 (7), 947-950, 2001
Structural Changes Underlying Field‐Cycling Phenomena in Ferroelectric HfO2 Thin Films
ED Grimley, T Schenk, X Sang, M Pešić, U Schroeder, T Mikolajick, ...
Advanced Electronic Materials 2 (9), 1600173, 2016
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