Johann W. Bartha
Johann W. Bartha
Professor für Halbleitertechnik, Technische Universität Dresden
Bestätigte E-Mail-Adresse bei - Startseite
Zitiert von
Zitiert von
Crystallization behavior of thin ALD-Al2O3 films
S Jakschik, U Schroeder, T Hecht, M Gutsche, H Seidl, JW Bartha
Thin Solid Films 425 (1-2), 216-220, 2003
Chemical bonding and reaction at metal/polymer interfaces
PS Ho, PO Hahn, JW Bartha, GW Rubloff, FK LeGoues, BD Silverman
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 3 (3 …, 1985
Doped organic transistors operating in the inversion and depletion regime
B Lüssem, ML Tietze, H Kleemann, C Hoßbach, JW Bartha, A Zakhidov, ...
Nature communications 4 (1), 2775, 2013
Photoemission spectroscopy study of aluminum–polyimide interface
JW Bartha, PO Hahn, F Legoues, PS Ho
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 3 (3 …, 1985
Low temperature etching of Si in high density plasma using SF6/O2
JW Bartha, J Greschner, M Puech, P Maquin
Microelectronic Engineering 27 (1-4), 453-456, 1995
Interaction of metals with model polymer surfaces: Core level photoemission studies
PN Sanda, JW Bartha, JG Clabes, JL Jordan, C Feger, BD Silverman, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 4 (3 …, 1986
Physical characterization of thin ALD–Al2O3 films
S Jakschik, U Schroeder, T Hecht, D Krueger, G Dollinger, A Bergmaier, ...
Applied surface science 211 (1-4), 352-359, 2003
Structure and thermal stability of graded Ta–TaN diffusion barriers between Cu and SiO2
R Hübner, M Hecker, N Mattern, V Hoffmann, K Wetzig, C Wenger, ...
Thin Solid Films 437 (1-2), 248-256, 2003
Thickness dependent barrier performance of permeation barriers made from atomic layer deposited alumina for organic devices
H Klumbies, P Schmidt, M Hähnel, A Singh, U Schroeder, C Richter, ...
Organic Electronics 17, 138-143, 2015
Anisotropy of thermal expansion of thin polyimide films
G Elsner, J Kempf, JW Bartha, HH Wagner
Thin Solid Films 185 (1), 189-197, 1990
Atomic Layer Deposition for Coating of High Aspect Ratio TiO2 Nanotube Layers
R Zazpe, M Knaut, H Sopha, L Hromadko, M Albert, J Prikryl, ...
Langmuir 32 (41), 10551-10558, 2016
PECVD (plasma enhanced chemical vapor deposition) method for depositing of tungsten or layers containing tungsten by in situ formation of tungsten fluorides
JW Bartha, T Bayer, J Greschner, G Kraus, G Schmid
US Patent 4,918,033, 1990
Atomic Layer Deposition of Titanium Dioxide Thin Films from Cp*Ti(OMe)3 and Ozone
M Rose, J Niinistö, P Michalowski, L Gerlich, L Wilde, I Endler, ...
The Journal of Physical Chemistry C 113 (52), 21825-21830, 2009
Temperature dependence of the sticking coefficient in atomic layer deposition
M Rose, JW Bartha, I Endler
Applied surface science 256 (12), 3778-3782, 2010
Breakdown and protection of ALD moisture barrier thin films
F Nehm, H Klumbies, C Richter, A Singh, U Schroeder, T Mikolajick, ...
ACS applied materials & interfaces 7 (40), 22121-22127, 2015
Method of producing micromechanical sensors for the afm/stm profilometry
JW Bartha, T Bayer, J Greschner, G Kraus, H Weiss, O Wolter
US Patent 5,116,462, 1992
Method to determine the sticking coefficient of precursor molecules in atomic layer deposition
M Rose, JW Bartha
Applied surface science 255 (13-14), 6620-6623, 2009
Temperature dependence of the reflectivity of silicon with surface oxide at wavelengths of 633 and 1047 nm
J Heller, JW Bartha, CC Poon, AC Tam
Applied Physics Letters 75 (1), 43-45, 1999
In Situ Reaction Mechanism Studies on Ozone-Based Atomic Layer Deposition of Al2O3 and HfO2
M Rose, J Niinistö, I Endler, JW Bartha, P Kücher, M Ritala
ACS Applied Materials & Interfaces 2 (2), 347-350, 2010
Influence of Al/sub 2/O/sub 3/dielectrics on the trap-depth profiles in MOS devices investigated by the charge-pumping method
S Jakschik, A Avellan, U Schroeder, JW Bartha
IEEE transactions on electron devices 51 (12), 2252-2255, 2004
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