Ahmad Abedin
Ahmad Abedin
PhD Candidate, KTH
Bestätigte E-Mail-Adresse bei kth.se
Titel
Zitiert von
Zitiert von
Jahr
Integration of highly-strained SiGe materials in 14 nm and beyond nodes FinFET technology
G Wang, A Abedin, M Moeen, M Kolahdouz, J Luo, Y Guo, T Chen, H Yin, ...
Solid-State Electronics 103, 222-228, 2015
452015
Optimization of SiGe selective epitaxy for source/drain engineering in 22 nm node complementary metal-oxide semiconductor (CMOS)
GL Wang, M Moeen, A Abedin, M Kolahdouz, J Luo, CL Qin, HL Zhu, ...
Journal of Applied Physics 114 (12), 123511, 2013
332013
Silicon micro-structure and ZnO nanowire hierarchical assortments for light management
BD Choudhury, A Abedin, A Dev, R Sanatinia, S Anand
Optical Materials Express 3 (8), 1039-1048, 2013
272013
Fabrication of periodic nanostructure assemblies by interfacial energy driven colloidal lithography
A Dev, B Dev Choudhury, A Abedin, S Anand
Advanced Functional Materials 24 (29), 4577-4583, 2014
222014
Impact of pattern dependency of SiGe layers grown selectively in source/drain on the performance of 22 nm node pMOSFETs
G Wang, M Moeen, A Abedin, Y Xu, J Luo, Y Guo, C Qin, Z Tang, H Yin, ...
Solid-State Electronics 114, 43-48, 2015
132015
Epitaxial growth of Ge strain relaxed buffer on Si with low threading dislocation density
A Abedin, A Asadollahi, K Garidis, PE Hellström, M Ostling
ECS Transactions 75 (8), 615, 2016
102016
Formation of nickel germanides from Ni layers with thickness below 10 nm
L Jablonka, T Kubart, D Primetzhofer, A Abedin, PE Hellström, M Östling, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2017
52017
CVD growth of GeSnSiC alloys using disilane, digermane, Tin Tetrachloride and methylsilane
M Noroozi, A Abedin, M Moeen, M Östling, HH Radamson
ECS Transactions 64 (6), 703, 2014
42014
Germanium on Insulator Fabrication for Monolithic 3-D Integration
A Abedin, L Zurauskaite, A Asadollahi, K Garidis, G Jayakumar, BG Malm, ...
IEEE Journal of the Electron Devices Society 6, 588-593, 2018
32018
Fabrications of size-controlled SiGe nanowires using I-line lithography and focused ion beam technique
M Noroozi, A Ergül, A Abedin, M Toprak, HH Radamson
ECS Transactions 64 (6), 167, 2014
32014
GOI fabrication for monolithic 3D integration
A Abedin, L Žurauskaitė, A Asadollahi, K Garidis, G Jayakumar, BG Malm, ...
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference …, 2017
22017
Enhanced device designs for Si-based infrared detectors
M Moeen, M Kolahdouz, A Salemi, A Abedin, M Östling, H Radamson
Applied Physics Letters, 2015
12015
Effect of strain on Ni-(GeSn) x contact formation to GeSn nanowires
M Noroozi, M Moeen, A Abedin, MS Toprak, HH Radamson
2014 MRS Spring Meeting, 21 April 2014 through 25 April 2014 1707, 2014
12014
Si-Passivated Ge Gate Sacks with Low Interface State and Oxide Trap Densities Using Thulium Silicate
L Zurauskaite, A Abedin, PE Hellström, M Östling
ECS Transactions 98 (5), 387, 2020
2020
Selective Epitaxial Growth of In Situ Doped SiGe on Bulk Ge for p+/n Junction Formation
K Garidis, A Abedin, A Asadollahi, PE Hellström, M Östling
Electronics 9 (4), 578, 2020
2020
Selective epitaxial growth of in situ doped SiGe on bulk Ge substrates forp+/n junction formation
K Garidis, A Abedin, A Asadollahi, PE Hellström, M Östling
2020
A novel route to a reliable extraction of the specific contact resistivity of the germanium/nickel germanide interface
L Jablonka, A Abedin, PE Hellström, SL Zhang, Z Zhang
2019
IR-Photodetector Fabrication on Suspended Gesn Thin Layers
A Abedin, K Garidis, PE Hellström, M Ostling
ECS Meeting Abstracts, 1023, 2018
2018
Improved designs of Si-based quantum wells and Schottky diodes for IR detection
M Moeen, M Kolahdouz, A Salemi, A Abedin, M Östling, HH Radamson
Thin Solid Films 613, 19-23, 2016
2016
Sensitivity of the crystal quality of SiGe layers grown at low temperatures by trisilane and germane
A Abedin, M Moeen, C Cappetta, M Östling, HH Radamson
Thin Solid Films 613, 38-42, 2016
2016
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