| Integration of highly-strained SiGe materials in 14 nm and beyond nodes FinFET technology G Wang, A Abedin, M Moeen, M Kolahdouz, J Luo, Y Guo, T Chen, H Yin, ... Solid-State Electronics 103, 222-228, 2015 | 53 | 2015 |
| Optimization of SiGe selective epitaxy for source/drain engineering in 22 nm node complementary metal-oxide semiconductor (CMOS) GL Wang, M Moeen, A Abedin, M Kolahdouz, J Luo, CL Qin, HL Zhu, ... Journal of Applied Physics 114 (12), 2013 | 41 | 2013 |
| Silicon micro-structure and ZnO nanowire hierarchical assortments for light management BD Choudhury, A Abedin, A Dev, R Sanatinia, S Anand Optical Materials Express 3 (8), 1039-1048, 2013 | 31 | 2013 |
| Fabrication of periodic nanostructure assemblies by interfacial energy driven colloidal lithography A Dev, B Dev Choudhury, A Abedin, S Anand Advanced Functional Materials 24 (29), 4577-4583, 2014 | 26 | 2014 |
| Epitaxial growth of Ge strain relaxed buffer on Si with low threading dislocation density A Abedin, A Asadollahi, K Garidis, PE Hellström, M Ostling ECS Transactions 75 (8), 615, 2016 | 18 | 2016 |
| Impact of pattern dependency of SiGe layers grown selectively in source/drain on the performance of 22 nm node pMOSFETs G Wang, M Moeen, A Abedin, Y Xu, J Luo, Y Guo, C Qin, Z Tang, H Yin, ... Solid-State Electronics 114, 43-48, 2015 | 14 | 2015 |
| Germanium on insulator fabrication for monolithic 3-D integration A Abedin, L Zurauskaite, A Asadollahi, K Garidis, G Jayakumar, BG Malm, ... IEEE Journal of the Electron Devices Society 6, 588-593, 2018 | 11 | 2018 |
| CVD growth of GeSnSiC alloys using disilane, digermane, Tin Tetrachloride and methylsilane M Noroozi, A Abedin, M Moeen, M Östling, HH Radamson ECS Transactions 64 (6), 703, 2014 | 11 | 2014 |
| Improved designs of Si-based quantum wells and Schottky diodes for IR detection M Moeen, M Kolahdouz, A Salemi, A Abedin, M Östling, HH Radamson Thin Solid Films 613, 19-23, 2016 | 10 | 2016 |
| Formation of nickel germanides from Ni layers with thickness below 10 nm L Jablonka, T Kubart, D Primetzhofer, A Abedin, PE Hellström, M Östling, ... Journal of Vacuum Science & Technology B 35 (2), 2017 | 8 | 2017 |
| Effect of strain on Ni-(GeSn) x contact formation to GeSn nanowires M Noroozi, M Moeen, A Abedin, MS Toprak, HH Radamson MRS Online Proceedings Library (OPL) 1707, mrss14-1707-uu06-03, 2014 | 8 | 2014 |
| Fabrications of size-controlled SiGe nanowires using I-line lithography and focused ion beam technique M Noroozi, A Ergül, A Abedin, M Toprak, HH Radamson ECS Transactions 64 (6), 167, 2014 | 5 | 2014 |
| Germanium layer transfer and device fabrication for monolithic 3D integration A Abedin KTH Royal Institute of Technology, 2021 | 3 | 2021 |
| Si-Passivated Ge Gate Stacks with Low Interface State and Oxide Trap Densities Using Thulium Silicate L Zurauskaite, A Abedin, PE Hellström, M Östling ECS Transactions 98 (5), 387, 2020 | 3 | 2020 |
| GOI fabrication for monolithic 3D integration A Abedin, L Žurauskaitė, A Asadollahi, K Garidis, G Jayakumar, BG Malm, ... 2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference …, 2017 | 3 | 2017 |
| Enhanced device designs for Si-based infrared detectors M Moeen, M Kolahdouz, A Salemi, A Abedin, M Östling, H Radamson Applied Physics Letters, 2015 | 2 | 2015 |
| Sensitivity of the crystal quality of SiGe layers grown at low temperatures by trisilane and germane A Abedin, M Moeen, C Cappetta, M Östling, HH Radamson Thin Solid Films 613, 38-42, 2016 | 1 | 2016 |
| Sensitivity of signal-to-noise ratio to the layer profile and crystal quality of SiGe/Si multilayers HH Radamson, M Moeen, A Abedin, A Hojabri, A Salemi, M Kolahdouz ECS Journal of Solid State Science and Technology 5 (4), P3196, 2016 | 1 | 2016 |
| Semiconductor devices for lasing applications and methods of manufacturing such devices A Abedin, M Östling US Patent App. 17/048,498, 2021 | | 2021 |
| Growth of epitaxial SiGe alloys as etch-stop layers in germanium-on-insulator fabrication A Abedin, K Garidis, A Asadollahi, PE Hellström, M Östling | | 2021 |
Mikael ÖstlingKTH Royal Institute of TechnologyBestätigte E-Mail-Adresse bei kth.se
