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Saptarshi Das
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High Performance Multi-layer MoS2 Transistors with Scandium Contacts
S Das, HY Chen, AV Penumatcha, J Appenzeller
Nano Letters 13 (1), 100-105, 2013
23422013
Recent advances in two-dimensional materials beyond graphene
GR Bhimanapati, Z Lin, V Meunier, Y Jung, J Cha, S Das, D Xiao, Y Son, ...
ACS Nano 9 (12), 11509-11539, 2015
19992015
Tunable transport gap in phosphorene
S Das, W Zhang, M Demarteau, A Hoffmann, M Dubey, A Roelofs
Nano letters 14 (10), 5733-5739, 2014
7052014
Beyond graphene: progress in novel two-dimensional materials and van der Waals solids
S Das, JA Robinson, M Dubey, H Terrones, M Terrones
Annual Review of Materials Research, 1-27, 2015
5642015
Contact engineering for 2D materials and devices
DS Schulman, AJ Arnold, S Das
Chemical Society Reviews 47 (9), 3037-3058, 2018
4482018
All two-dimensional, flexible, transparent, and thinnest thin film transistor
S Das, R Gulotty, AV Sumant, A Roelofs
Nano letters 14 (5), 2861-2866, 2014
4112014
WSe2 field effect transistors with enhanced ambipolar characteristics
S Das, J Appenzeller
Applied Physics Letters 103 (10), 103501, 2013
3952013
Ambipolar Phosphorene Field Effect Transistor
S Das, M Demarteau, A Roelofs
ACS Nano 8 (11), 11730-11738, 2014
3942014
Where Does the Current Flow in Two-Dimensional Layered Systems?
S Das, J Appenzeller
Nano Letters 13 (7), 3396–3402, 2013
2602013
Towards Low Power Electronics: Tunneling Phenomena in Transition Metal Dichalcogenides
S Das, A Prakash, R Salazar, J Appenzeller
ACS Nano 8 (2), 1681-89, 2014
1962014
Mimicking Neurotransmitter Release in Chemical Synapses via Hysteresis Engineering in MoS2 Transistors
AJ Arnold, A Razavieh, JR Nasr, DS Schulman, CM Eichfeld, S Das
ACS Nano 11 (3), 3110-3118, 2017
1892017
Screening and interlayer coupling in multilayer MoS2
S Das, J Appenzeller
physica status solidi (RRL)-Rapid Research Letters 7 (4), 268-273, 2013
1732013
A roadmap for electronic grade 2D materials
N Briggs, S Subramanian, Z Lin, X Li, X Zhang, K Zhang, K Xiao, ...
2D Materials 6 (2), 022001, 2019
1652019
Origin of the turn-on temperature behavior in WTe 2
YL Wang, LR Thoutam, ZL Xiao, J Hu, S Das, ZQ Mao, J Wei, R Divan, ...
Physical Review B 92 (18), 180402, 2015
1282015
Temperature-Dependent Three-Dimensional Anisotropy of the Magnetoresistance in WTe2
L. R. Thoutam, Y. L. Wang, Z. L. Xiao, S. Das, A. Luican-Mayer, R. Divan, G ...
Physical Review Letters 115 (46602), 2015
1222015
Benchmarking monolayer MoS2 and WS2 field-effect transistors
A Sebastian, R Pendurthi, TH Choudhury, JM Redwing, S Das
Nature Communications 12 (1), 693, 2021
1112021
Carbon doping of WS2 monolayers: Bandgap reduction and p-type doping transport
F Zhang, Y Lu, DS Schulman, T Zhang, K Fujisawa, Z Lin, Y Lei, AL Elias, ...
Science Advances 5 (5), eaav5003, 2019
1002019
FETRAM-An Organic Ferroelectric Material Based Novel Random Access Memory Cell
S Das, J Appenzeller
Nano Letters 11 (9), 4003–4007, 2011
942011
High gain, low noise, fully complementary logic inverter based on bi-layer WSe2 field effect transistors
S Das, M Dubey, A Roelofs
Applied Physics Letters 105 (8), 083511, 2014
912014
Nb-doped single crystalline MoS2 field effect transistor
S Das, M Demarteau, A Roelofs
Applied Physics Letters 106 (17), 173506, 2015
902015
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