Follow
Saúl Estandía
Saúl Estandía
ICMAB-CSIC
Verified email at icmab.es
Title
Cited by
Cited by
Year
Engineering Ferroelectric Hf0.5Zr0.5O2 Thin Films by Epitaxial Stress
S Estandia, N Dix, J Gazquez, I Fina, J Lyu, MF Chisholm, J Fontcuberta, ...
ACS Applied Electronic Materials 1 (8), 1449-1457, 2019
1602019
Enhanced ferroelectricity in epitaxial Hf0. 5Zr0. 5O2 thin films integrated with Si (001) using SrTiO3 templates
J Lyu, I Fina, R Bachelet, G Saint-Girons, S Estandía, J Gázquez, ...
Applied Physics Letters 114 (22), 2019
862019
Domain-Matching Epitaxy of Ferroelectric Hf0.5Zr0.5O2(111) on La2/3Sr1/3MnO3(001)
S Estandía, N Dix, MF Chisholm, I Fina, F Sánchez
Crystal Growth & Design 20 (6), 3801-3806, 2020
852020
Unraveling Ferroelectric Polarization and Ionic Contributions to Electroresistance in Epitaxial Hf0.5Zr0.5O2 Tunnel Junctions
MC Sulzbach, S Estandía, X Long, J Lyu, N Dix, J Gàzquez, MF Chisholm, ...
Advanced Electronic Materials 6 (1), 1900852, 2020
642020
Blocking of Conducting Channels Widens Window for Ferroelectric Resistive Switching in Interface‐Engineered Hf0.5Zr0.5O2 Tunnel Devices
MC Sulzbach, S Estandía, J Gàzquez, F Sánchez, I Fina, J Fontcuberta
Advanced Functional Materials 30 (32), 2002638, 2020
562020
Polarization and Resistive Switching in Epitaxial 2 nm Hf0.5Zr0.5O2 Tunnel Junctions
M Cervo Sulzbach, H Tan, S Estandía, J Gazquez, F Sanchez, I Fina, ...
ACS Applied Electronic Materials 3 (8), 3657-3666, 2021
492021
Critical effect of the bottom electrode on the ferroelectricity of epitaxial Hf 0.5 Zr 0.5 O 2 thin films
S Estandía, J Gazquez, M Varela, N Dix, M Qian, R Solanas, I Fina, ...
Journal of Materials Chemistry C 9 (10), 3486-3492, 2021
352021
Improved polarization and endurance in ferroelectric Hf 0.5 Zr 0.5 O 2 films on SrTiO 3 (110)
T Song, H Tan, S Estandía, J Gàzquez, M Gich, N Dix, I Fina, F Sánchez
Nanoscale 14 (6), 2337-2343, 2022
342022
Positive Effect of Parasitic Monoclinic Phase of Hf0.5Zr0.5O2 on Ferroelectric Endurance
T Song, S Estandía, H Tan, N Dix, J Gàzquez, I Fina, F Sánchez
Advanced Electronic Materials 8 (1), 2100420, 2022
322022
Rotational polarization nanotopologies in BaTiO 3/SrTiO 3 superlattices
S Estandía, F Sánchez, MF Chisholm, J Gazquez
Nanoscale 11 (44), 21275-21283, 2019
282019
Control of Polar Orientation and Lattice Strain in Epitaxial BaTiO3 Films on Silicon
J Lyu, S Estandía, J Gazquez, MF Chisholm, I Fina, N Dix, J Fontcuberta, ...
ACS applied materials & interfaces 10 (30), 25529-25535, 2018
272018
Insights into the atomic structure of the interface of ferroelectric grown epitaxially on
S Estandía, T Cao, R Mishra, I Fina, F Sánchez, J Gazquez
Physical Review Materials 5 (7), 074410, 2021
232021
Synergetic contributions of chemical doping and epitaxial stress to polarization in ferroelectric HfO2 films
T Song, H Tan, AC Robert, S Estandia, J Gázquez, F Sánchez, I Fina
Applied Materials Today 29, 101621, 2022
202022
Ferroelectric (hf, zr, la) o2 films
T Song, S Estandía, I Fina, F Sánchez
Applied Materials Today 29, 101661, 2022
132022
Enhanced electroresistance endurance of capped Hf0. 5Zr0. 5O2 ultrathin epitaxial tunnel barriers
X Long, H Tan, S Estandía, J Gazquez, F Sánchez, I Fina, J Fontcuberta
APL Materials 10 (3), 2022
112022
Ferroelectric Hf 0.5 Zr 0.5 O 2 films on SrTiO 3 (111)
T Song, S Estandía, N Dix, J Gàzquez, M Gich, I Fina, F Sánchez
Journal of Materials Chemistry C 10 (21), 8407-8413, 2022
82022
Photovoltaic-driven dual optical writing and non-destructive voltage-less reading of polarization in ferroelectric Hf0. 5Zr0. 5O2 for energy efficient memory devices
H Tan, A Quintana, N Dix, S Estandía, J Sort, F Sánchez, I Fina
Nano Energy 123, 109384, 2024
42024
Effects of Doping, Stress, and Thickness on the Piezoelectric Response and Its Relation with Polarization in Ferroelectric HfO2
H Tan, S Estandía, F Sánchez, I Fina
ACS Applied Electronic Materials 5 (12), 6630-6639, 2023
12023
Epitaxial ferroelectric doped HfO2 thin films on Si (001)
T Song, J Lyu, S Estandia, J Gazquez, G Saint-Girons, R Bachelet, I Fina, ...
Workshop virtuel sur l’épitaxie des oxydes (EPIDOX), 2021
2021
Photovoltaic-Driven Optical Writing and Non-Destructive Reading of Polarization in Ferroelectric Hf0. 5zr0. 5o2 for Energy Efficient Memory Devices
H Tan, A Quintana, N Dix, S Estandía, J Sort, F Sánchez, I Fina
Available at SSRN 4535448, 0
The system can't perform the operation now. Try again later.
Articles 1–20