| Physical properties of polymers handbook JE Mark Springer 1076, 825, 2007 | 2688 | 2007 |
| Modeling line edge roughness effects in sub 100 nanometer gate length devices P Oldiges, Q Lin, K Petrillo, M Sanchez, M Ieong, M Hargrove 2000 International Conference on Simulation of Semiconductor Processes and …, 2000 | 193 | 2000 |
| Silsesquioxane polymers, method of synthesis, photoresist composition, and multilayer lithographic method Q Lin, M Angelopoulos, AD Katnani, R Sooriyakumaran US Patent 6,087,064, 2000 | 151 | 2000 |
| Patternable low dielectric constant materials and their use in ULSI interconnection Q Lin, R Sooriyakumaran US Patent 7,041,748, 2006 | 135 | 2006 |
| Effect of drawing on structure and properties of a liquid crystalline polymer and polycarbonate in‐situ composite Q Lin, J Jho, AF Yee Polymer Engineering & Science 33 (13), 789-798, 1993 | 82 | 1993 |
| Small angle x-ray scattering metrology for sidewall angle and cross section of nanometer scale line gratings T Hu, RL Jones, W Wu, EK Lin, Q Lin, D Keane, S Weigand, J Quintana Journal of Applied Physics 96 (4), 1983-1987, 2004 | 80 | 2004 |
| Airgap-containing interconnect structure with patternable low-k material and method of fabricating Q Lin US Patent 8,476,758, 2013 | 73 | 2013 |
| Method for air gap interconnect integration using photo-patternable low k material LA Clevenger, M Darnon, Q Lin, AD Lisi, SV Nitta US Patent 8,241,992, 2012 | 69 | 2012 |
| Resist composition and process of forming a patterned resist layer on a substrate Q Lin, TM Hughes, GM Jordhamo, AD Katnani, WM Moreau, N Patel US Patent 6,210,856, 2001 | 69 | 2001 |
| Toward controlled resist line-edge roughness: material origin of line-edge roughness in chemically amplified positive-tone resists Q Lin, R Sooriyakumaran, WS Huang Advances in Resist Technology and Processing XVII 3999, 230-239, 2000 | 69 | 2000 |
| Measurement of bandgap energies in low-k organosilicates MT Nichols, W Li, D Pei, GA Antonelli, Q Lin, S Banna, Y Nishi, JL Shohet Journal of Applied Physics 115 (9), 094105, 2014 | 64 | 2014 |
| Phase transformations of a liquid crystalline epoxy during curing Q Lin, AF Yee, JD Earls, RE Hefner Jr, HJ Sue Polymer 35 (12), 2679-2682, 1994 | 58 | 1994 |
| Evolution of structure and properties of a liquid crystalline epoxy during curing Q Lin, AF Yee, HJ Sue, JD Earls, RE Hefner Jr Journal of Polymer Science Part B: Polymer Physics 35 (14), 2363-2378, 1997 | 56 | 1997 |
| Spin-on antireflective coating for integration of patternable dielectric materials and interconnect structures RD Allen, PJ Brock, BW Davis, WS Huang, Q Lin, A Nelson, ... US Patent 7,709,370, 2010 | 50 | 2010 |
| Photopatternable dielectric materials for BEOL applications and methods for use RD Allen, PJ Brock, BW Davis, Q Lin, RD Miller, A Nelson, ... US Patent 8,029,971, 2011 | 48 | 2011 |
| Quantifying the stress relaxation modulus of polymer thin films via thermal wrinkling EP Chan, S Kundu, Q Lin, CM Stafford ACS applied materials & interfaces 3 (2), 331-338, 2011 | 48 | 2011 |
| A water-castable, water-developable chemically amplified negative-tone resist Q Lin, T Steinhäusler, L Simpson, M Wilder, DR Medeiros, CG Willson, ... Chemistry of materials 9 (8), 1725-1730, 1997 | 48 | 1997 |
| Photopatternable dielectric materials for BEOL applications and methods for use RD Allen, PJ Brock, BW Davis, GJ Dubois, Q Lin, RD Miller, A Nelson, ... US Patent 7,919,225, 2011 | 46 | 2011 |
| Silsesquioxane polymers, method of synthesis, photoresist composition, and multilayer lithographic method Q Lin, M Angelopoulos, AD Katnani, R Sooriyakumaran US Patent 6,340,734, 2002 | 46 | 2002 |
| Patternable dielectric film structure with improved lithography and method of fabricating same Q Lin, DA Neumayer US Patent 8,618,663, 2013 | 45 | 2013 |
Alshakim NelsonUniversity of WashingtonVerified email at uw.edu
