Follow
Kjell Jeppson
Kjell Jeppson
Verified email at chalmers.se - Homepage
Title
Cited by
Cited by
Year
Negative bias stress of MOS devices at high electric fields and degradation of MNOS devices
KO Jeppson, CM Svensson
Journal of Applied Physics 48 (5), 2004-2014, 1977
9521977
CMOS circuit speed and buffer optimization
N Hedenstierna, KO Jeppson
IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 1987
6001987
Modeling the influence of the transistor gain ratio and the input-to-output coupling capacitance on the CMOS inverter delay
KO Jeppson
IEEE Journal of Solid-State Circuits 29 (6), 646-654, 1994
1661994
Improved heat spreading performance of functionalized graphene in microelectronic device application
Y Zhang, H Han, N Wang, P Zhang, Y Fu, M Murugesan, M Edwards, ...
Advanced Functional Materials 25 (28), 4430-4435, 2015
1482015
Applications of aluminium nitride films deposited by reactive sputtering to silicon-on-insulator materials
S Bengtsson, M Bergh, M Choumas, COC Olesen, KOJKO Jeppson
Japanese journal of applied physics 35 (8R), 4175, 1996
1071996
Synthesis and applications of two-dimensional hexagonal boron nitride in electronics manufacturing
J Bao, K Jeppson, M Edwards, Y Fu, L Ye, X Lu, J Liu
Electronic Materials Letters 12, 1-16, 2016
942016
Through-silicon vias filled with densified and transferred carbon nanotube forests
T Wang, S Chen, D Jiang, Y Fu, K Jeppson, L Ye, J Liu
IEEE Electron Device Letters 33 (3), 420-422, 2012
872012
Through silicon vias filled with planarized carbon nanotube bundles
T Wang, K Jeppson, N Olofsson, EEB Campbell, J Liu
Nanotechnology 20 (48), 485203, 2009
772009
Two-dimensional hexagonal boron nitride as lateral heat spreader in electrically insulating packaging
J Bao, M Edwards, S Huang, Y Zhang, Y Fu, X Lu, Z Yuan, K Jeppson, ...
Journal of Physics D: Applied Physics 49 (26), 265501, 2016
582016
Influence of the channel width on the threshold voltage modulation in MOSFETs
KO Jeppson
Electronics Letters 11 (14), 297-299, 1975
561975
Dry densification of carbon nanotube bundles
T Wang, K Jeppson, J Liu
Carbon 48 (13), 3795-3801, 2010
522010
Vertically aligned CNT-Cu nano-composite material for stacked through-silicon-via interconnects
S Sun, W Mu, M Edwards, D Mencarelli, L Pierantoni, Y Fu, K Jeppson, ...
Nanotechnology 27 (33), 335705, 2016
492016
Vertically stacked carbon nanotube-based interconnects for through silicon via application
D Jiang, W Mu, S Chen, Y Fu, K Jeppson, J Liu
IEEE Electron Device Letters 36 (5), 499-501, 2015
472015
Characterization and simulation of liquid phase exfoliated graphene-based films for heat spreading applications
Y Zhang, M Edwards, MK Samani, N Logothetis, L Ye, Y Fu, K Jeppson, ...
Carbon 106, 195-201, 2016
412016
An efficient parameter extraction algorithm for MOS transistor models
PR Karlsson, KO Jeppson
IEEE transactions on electron devices 39 (9), 2070-2076, 1992
391992
An efficient method for determining threshold voltage, series resistance and effective geometry of MOS transistors
PR Karlsson, KO Jeppson
IEEE transactions on semiconductor manufacturing 9 (2), 215-222, 1996
361996
A surface potential model for predicting substrate noise coupling in integrated circuits
S Kristiansson, F Ingvarson, SP Kagganti, N Simic, M Zgrda, KO Jeppson
IEEE journal of solid-state circuits 40 (9), 1797-1803, 2005
352005
Formation of three-dimensional carbon nanotube structures by controllable vapor densification
T Wang, D Jiang, S Chen, K Jeppson, L Ye, J Liu
Materials Letters 78, 184-187, 2012
322012
The halo algorithm-an algorithm for hierarchical design of rule checking of VLSI circuits
N Hedenstierna, KO Jeppson
IEEE transactions on computer-aided design of integrated circuits and …, 1993
321993
Compact spreading resistance model for rectangular contacts on uniform and epitaxial substrates
S Kristiansson, F Ingvarson, KO Jeppson
IEEE transactions on electron devices 54 (9), 2531-2536, 2007
302007
The system can't perform the operation now. Try again later.
Articles 1–20