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Chen Yang Yin 陈杨胤
Chen Yang Yin 陈杨胤
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Year
10×10nm2Hf/HfOxcrossbar resistive RAM with excellent performance, reliability and low-energy operation
B Govoreanu, GS Kar, YY Chen, V Paraschiv, S Kubicek, A Fantini, ...
2011 International Electron Devices Meeting, 31.6. 1-31.6. 4, 2011
1001*2011
Endurance/Retention Trade-off on HfO2/Metal Cap 1T1R Bipolar RRAM
YYIN CHEN, L GOUX, S CLIMA, B GOVOREANU, R DEGRAEVE, ...
IEEE transactions on electron devices 60 (3), 1114-1121, 2013
2772013
Evidences of oxygen-mediated resistive-switching mechanism in TiN\ HfO\ Pt cells
L Goux, P Czarnecki, YY Chen, L Pantisano, XP Wang, R Degraeve, ...
Applied Physics Letters 97, 243509, 2010
2712010
Intrinsic switching variability in HfO 2 RRAM
A Fantini, L Goux, R Degraeve, DJ Wouters, N Raghavan, G Kar, ...
2013 5th IEEE International Memory Workshop, 30-33, 2013
2462013
Applied Physics Letters
L Goux, P Czarnecki, YY Chen
J 97 (2), 43, 2010
231*2010
Balancing SET/RESET pulse for> 1010 endurance in HfO2/Hf 1T1R bipolar RRAM
YY Chen, B Govoreanu, L Goux, R Degraeve, A Fantini, G SANKAR KAR, ...
IEEE transactions on electron devices 59 (12), 3243-3249, 2012
210*2012
ReRAM: History, Status, and Future
Y Chen
IEEE Transactions on Electron Devices 67 (4), 1420-1433, 2020
2042020
On the gradual unipolar and bipolar resistive switching of TiN\ HfO2\ Pt memory systems
L Goux, YY Chen, L Pantisano, XP Wang, G Groeseneken, M Jurczak, ...
Electrochemical and Solid-State Letters 13 (6), G54-G56, 2010
1472010
Improvement of data retention in HfO2/Hf 1T1R RRAM cell under low operating current
YY Chen, M Komura, R Degraeve, B Govoreanu, L Goux, A Fantini, ...
International Electron Deives Meeting-IEDM, 352-355, 2013
1392013
Understanding of the endurance failure in scaled HfO 2-based 1T1R RRAM through vacancy mobility degradation
YY Chen, R Degraeve, S Clima, B Govoreanu, L Goux, A Fantini, GS Kar, ...
Electron Devices Meeting (IEDM), 2012 IEEE International, 20.3. 1-20.3. 4, 2012
125*2012
Dynamic ‘hour glass’ model for SET and RESET in HfO 2 RRAM
R Degraeve, A Fantini, S Clima, B Govoreanu, L Goux, YY Chen, ...
VLSI Technology (VLSIT), 2012 Symposium on, 75-76, 2012
1182012
Filament observation in metal-oxide resistive switching devices
U Celano, Y Yin Chen, DJ Wouters, G Groeseneken, M Jurczak, ...
Applied Physics Letters 102 (12), 2013
1002013
First-principles simulation of oxygen diffusion in HfO< inf> x</inf>: Role in the resistive switching mechanism
S Clima, YY Chen, R Degraeve, M Mees, K Sankaran, B Govoreanu, ...
Applied Physics Letters 100 (13), 133102-133102-4, 2012
992012
Ultralow sub-500nA operating current high-performance TiNAl< inf> 2</inf> O< inf> 3</inf> HfO< inf> 2</inf> HfTiN bipolar RRAM achieved through understanding-based stack …
L Goux, A Fantini, G Kar, Y Chen, N Jossart, R Degraeve, S Clima, ...
VLSI Technology (VLSIT), 2012 Symposium on, 159-160, 2012
91*2012
Intrinsic switching behavior in HfO2 RRAM by fast electrical measurements on novel 2R test structures
A Fantini, DJ Wouters, R Degraeve, L Goux, L Pantisano, G Kar, YY Chen, ...
Memory Workshop (IMW), 2012 4th IEEE International, 1-4, 2012
882012
A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory
S Yu, Y Yin Chen, X Guan, HS Philip Wong, JA Kittl
Applied Physics Letters 100 (4), 2012
832012
Analysis of Complementary RRAM Switching
DJ Wouters, L Zhang, A Fantini, R Degraeve, L Goux, YY Chen, ...
Electron Device Letters, IEEE 33 (8), 1186-1188, 2012
772012
Insights into Ni-filament formation in unipolar-switching Ni/HfO2/TiN resistive random access memory device
Y Yin Chen, G Pourtois, C Adelmann, L Goux, B Govoreanu, R Degreave, ...
Applied Physics Letters 100 (11), 2012
742012
Field-driven ultrafast sub-ns programming in W\Al2O3\Ti\CuTe-based 1T1R CBRAM system
L Goux, K Sankaran, G Kar, N Jossart, K Opsomer, R Degraeve, ...
2012 Symposium on VLSI Technology (VLSIT), 69-70, 2012
622012
Intrinsic Tailing of Resistive States Distributions in Amorphous HfO x and TaO x Based Resistive Random Access Memories
S Clima, YY Chen, A Fantini, L Goux, R Degraeve, B Govoreanu, ...
IEEE Electron Device Letters 36 (8), 769-771, 2015
582015
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