| Two charge states of the acceptor in GaN: Evidence from photoluminescence MA Reshchikov, M Vorobiov, DO Demchenko, Ü Özgür, H Morkoç, ... Physical Review B 98 (12), 125207, 2018 | 94 | 2018 |
| Determination of the concentration of impurities in GaN from photoluminescence and secondary-ion mass spectrometry MA Reshchikov, M Vorobiov, O Andrieiev, K Ding, N Izyumskaya, ... Scientific Reports 10 (1), 2223, 2020 | 32 | 2020 |
| Shallow and deep states of beryllium acceptor in GaN: Why photoluminescence experiments do not reveal small polarons for defects in semiconductors DO Demchenko, M Vorobiov, O Andrieiev, TH Myers, MA Reshchikov Physical Review Letters 126 (2), 027401, 2021 | 22 | 2021 |
| Point defects in beryllium-doped GaN M Vorobiov, O Andrieiev, DO Demchenko, MA Reshchikov Physical Review B 104 (24), 245203, 2021 | 16 | 2021 |
| The effect of annealing on photoluminescence from defects in ammonothermal GaN MA Reshchikov, DO Demchenko, D Ye, O Andrieiev, M Vorobiov, ... Journal of Applied Physics 131 (3), 2022 | 14 | 2022 |
| Photoluminescence related to Ca in GaN MA Reshchikov, DO Demchenko, M Vorobiov, O Andrieiev, B McEwen, ... Physical Review B 106 (3), 035206, 2022 | 12 | 2022 |
| Stability of the CNHi Complex and the Blue Luminescence Band in GaN MA Reshchikov, O Andrieiev, M Vorobiov, B McEwen, ... physica status solidi (b) 258 (12), 2100392, 2021 | 12 | 2021 |
| Defect-related photoluminescence from ammono GaN MA Reshchikov, M Vorobiov, K Grabianska, M Zajac, M Iwinska, ... Journal of Applied Physics 129 (9), 2021 | 11 | 2021 |
| Thermal annealing of GaN implanted with Be MA Reshchikov, O Andrieiev, M Vorobiov, D Ye, DO Demchenko, ... Journal of Applied Physics 131 (12), 2022 | 8 | 2022 |
| MOCVD Growth and Characterization of Be-Doped GaN B McEwen, MA Reshchikov, E Rocco, V Meyers, K Hogan, O Andrieiev, ... ACS Applied Electronic Materials 4 (8), 3780-3785, 2022 | 7 | 2022 |
| Dual nature of the acceptor in GaN: Evidence from photoluminescence MA Reshchikov, M Vorobiov, O Andrieiev, DO Demchenko, B McEwen, ... Physical Review B 108 (7), 075202, 2023 | 5 | 2023 |
| Photoluminescence from Be‐Doped GaN Grown by Metal‐Organic Chemical Vapor Deposition MA Reshchikov, M Vorobiov, O Andrieiev, B McEwen, E Rocco, V Meyers, ... physica status solidi (b) 260 (8), 2200487, 2023 | 4 | 2023 |
| Photoluminescence from GaN implanted with Be and F MA Reshchikov, O Andrieiev, M Vorobiov, DO Demchenko, B McEwen, ... physica status solidi (b) 260 (9), 2300131, 2023 | 3 | 2023 |
| Photoluminescence from CdGa and HgGa acceptors in GaN MA Reshchikov, O Andrieiev, M Vorobiov, DO Demchenko, B McEwen, ... Journal of Applied Physics 135 (15), 2024 | 1 | 2024 |
| Nitrogen vacancy–acceptor complexes in gallium nitride M Vorobiov, DO Demchenko, O Andrieiev, MA Reshchikov Journal of Applied Physics 135 (15), 2024 | | 2024 |
| Physics of acceptors in GaN: Koopmans tuned HSE hybrid functional calculations and experiment DO Demchenko, M Vorobiov, O Andrieiev, MA Reshchikov, B MvEwen, ... arXiv preprint arXiv:2404.06603, 2024 | | 2024 |
| Influence of dislocation density and interfacial lattice mismatch on MOCVD-grown Be-doped GaN B McEwen, MA Reshchikov, E Rocco, V Meyers, A Lanjani, O Andrieiev, ... Gallium Nitride Materials and Devices XVIII, 2023 | | 2023 |
| Toward highly efficient p-doping in III-nitride optoelectronics: MOCVD growth of Be-doped GaN B McEwen, M Reshchikov, E Rocco, V Meyers, K Hogan, O Andrieiev, ... Gallium Nitride Materials and Devices XVII, PC120010B, 2022 | | 2022 |
| Photoluminescence from Gan Co-doped with C and Si M Vorobiov | | 2018 |
Michael A ReshchikovProfessor of Physics, Virginia Commonwealth UniversityVerified email at vcu.edu
