Patrick Naulleau
Patrick Naulleau
Other namesPatrick P. Naulleau
EUV Tech Inc. and Berkeley Lab
Verified email at - Homepage
Cited by
Cited by
Real space soft x-ray imaging at 10 nm spatial resolution
W Chao, P Fischer, T Tyliszczak, S Rekawa, E Anderson, P Naulleau
Optics express 20 (9), 9777-9783, 2012
Extreme-ultraviolet phase-shifting point-diffraction interferometer: a wave-front metrology tool with subangstrom reference-wave accuracy
PP Naulleau, KA Goldberg, SH Lee, C Chang, D Attwood, J Bokor
Applied Optics 38 (35), 7252-7263, 1999
Hartmann wave-front measurement at 13.4 nm with λEUV/120 accuracy
P Mercère, P Zeitoun, M Idir, S Le Pape, D Douillet, X Levecq, G Dovillaire, ...
Optics letters 28 (17), 1534-1536, 2003
Status of EUV micro-exposure capabilities at the ALS using the 0.3-NA MET optic
P Naulleau, KA Goldberg, EH Anderson, K Bradley, R Delano, P Denham, ...
Emerging Lithographic Technologies VIII 5374, 881-891, 2004
Directly patterned inorganic hardmask for EUV lithography
JK Stowers, A Telecky, M Kocsis, BL Clark, DA Keszler, A Grenville, ...
Extreme Ultraviolet (EUV) Lithography II 7969, 386-396, 2011
Nanofabrication handbook
S Cabrini, S Kawata
CRC press, 2012
Extreme ultraviolet carrier-frequency shearing interferometry of a lithographic four-mirror optical system
PP Naulleau, KA Goldberg, J Bokor
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000
Critical challenges for EUV resist materials
PP Naulleau, CN Anderson, LM Baclea-An, P Denham, S George, ...
Advances in Resist Materials and Processing Technology XXVIII 7972, 17-26, 2011
Fourier-synthesis custom-coherence illuminator for extreme ultraviolet microfield lithography
PP Naulleau, KA Goldberg, P Batson, J Bokor, P Denham, S Rekawa
Applied Optics 42 (5), 820-826, 2003
Need for LWR metrology standardization: the imec roughness protocol
GF Lorusso, T Sutani, V Rutigliani, F Van Roey, A Moussa, AL Charley, ...
Journal of Micro/Nanolithography, MEMS, and MOEMS 17 (4), 041009-041009, 2018
Biological soft X-ray tomography on beamline 2.1 at the Advanced Light Source
MA Le Gros, G McDermott, BP Cinquin, EA Smith, M Do, WL Chao, ...
Journal of synchrotron radiation 21 (6), 1370-1377, 2014
Resolution, LER, and sensitivity limitations of photoresists
GM Gallatin, P Naulleau, D Niakoula, R Brainard, E Hassanein, R Matyi, ...
Emerging Lithographic Technologies XII 6921, 417-427, 2008
System integration and performance of the EUV engineering test stand
DA Tichenor, AK Ray-Chaudhuri, WC Replogle, RH Stulen, GD Kubiak, ...
Emerging Lithographic Technologies V 4343, 19-37, 2001
Line-edge roughness transfer function and its application to determining mask effects in EUV resist characterization
PP Naulleau, GM Gallatin
Applied Optics 42 (17), 3390-3397, 2003
Fundamental limits to EUV photoresist
GM Gallatin, P Naulleau, R Brainard
Advances in Resist Materials and Processing Technology XXIV 6519, 387-396, 2007
Spatial coherence characterization of undulator radiation
C Chang, P Naulleau, E Anderson, D Attwood
Optics communications 182 (1-3), 25-34, 2000
EUV engineering test stand
DA Tichenor, GD Kubiak, WC Replogle, LE Klebanoff, JB Wronosky, ...
Emerging Lithographic Technologies IV 3997, 48-69, 2000
Tunable coherent radiation in the soft X-ray and extreme ultraviolet spectral regions
DT Attwood, P Naulleau, KA Goldberg, E Tejnil, C Chang, R Beguiristain, ...
IEEE Journal of Quantum Electronics 35 (5), 709-720, 1999
Microscopy of extreme ultraviolet lithography masks with 13.2 nm tabletop laser illumination
F Brizuela, Y Wang, CA Brewer, F Pedaci, W Chao, EH Anderson, Y Liu, ...
Optics letters 34 (3), 271-273, 2009
Sub-70 nm extreme ultraviolet lithography at the advanced light source static microfield exposure station using the engineering test stand set-2 optic
P Naulleau, KA Goldberg, EH Anderson, D Attwood, P Batson, J Bokor, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002
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