Ashkar Ali
Ashkar Ali
Intel Corporation
Verified email at
Cited by
Cited by
A 10nm high performance and low-power CMOS technology featuring 3rd generation FinFET transistors, Self-Aligned Quad Patterning, contact over active gate…
C Auth, A Aliyarukunju, M Asoro, D Bergstrom, V Bhagwat, J Birdsall, ...
2017 IEEE International Electron Devices Meeting (IEDM), 29.1. 1-29.1. 4, 2017
Experimental demonstration of 100nm channel length In0.53Ga0.47As-based vertical inter-band tunnel field effect transistors (TFETs) for ultra low-power logic and…
S Mookerjea, D Mohata, R Krishnan, J Singh, A Vallett, A Ali, T Mayer, ...
2009 IEEE international electron devices meeting (IEDM), 1-3, 2009
Aeromonas trota sp. nov., an ampicillin-susceptible species isolated from clinical specimens.
AM Carnahan, T Chakraborty, GR Fanning, D Verma, A Ali, JM Janda, ...
Journal of Clinical Microbiology 29 (6), 1206-1210, 1991
Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of AlO
A Ali, HS Madan, AP Kirk, DA Zhao, DA Mourey, MK Hudait, RM Wallace, ...
Applied Physics Letters 97, 143502, 2010
Small-Signal Response of Inversion Layers in High-Mobility $ hbox {In} _ {0.53} hbox {Ga} _ {0.47} hbox {As} $ MOSFETs Made With Thin High-$ kappa $ Dielectrics
A Ali, H Madan, S Koveshnikov, S Oktyabrsky, R Kambhampati, T Heeg, ...
Electron Devices, IEEE Transactions on 57 (4), 742-748, 2010
Aeromonas bestiarum sp. nov.(formerly genomospecies DNA group 2 A. hydrophila), a new species isolated from non-human sources
A Ali
Med. Microbiol. Lett. 5, 156-165, 1996
Immunization with bacterial antigens: infections with motile aeromonads.
I Karunasagar, A Ali, SK Otta
Developments in Biological standardization 90, 135-141, 1997
Insight into the output characteristics of III-V tunneling field effect transistors
B Rajamohanan, D Mohata, A Ali, S Datta
Applied Physics Letters 102 (9), 092105, 2013
Effect of interface states on sub-threshold response of III–V MOSFETs, MOS HEMTs and tunnel FETs
WC Kao, A Ali, E Hwang, S Mookerjea, S Datta
Solid-state electronics 54 (12), 1665-1668, 2010
Band offsets determination and interfacial chemical properties of the system
I Geppert, M Eizenberg, A Ali, S Datta
Applied Physics Letters 97 (16), 162109, 2010
Experimental determination of quantum and centroid capacitance in arsenide–antimonide quantum-well MOSFETs incorporating nonparabolicity effect
A Ali, H Madan, R Misra, A Agrawal, P Schiffer, JB Boos, BR Bennett, ...
IEEE transactions on electron devices 58 (5), 1397-1403, 2011
Enhancement-Mode Antimonide Quantum-Well MOSFETs With High Electron Mobility and Gigahertz Small-Signal Switching Performance
A Ali, H Madan, A Agrawal, I Ramirez, R Misra, JB Boos, BR Bennett, ...
Electron Device Letters, IEEE 32 (12), 1689-1691, 2011
Advanced composite high-κ gate stack for mixed anion arsenide-antimonide quantum well transistors
A Ali, H Madan, R Misra, E Hwang, A Agrawal, I Ramirez, P Schiffer, ...
Electron Devices Meeting (IEDM), 2010 IEEE International, 6.3. 1-6.3. 4, 2010
Effect of interface states on the performance of antimonide nMOSFETs
A Ali, H Madan, MJ Barth, JB Boos, BR Bennett, S Datta
IEEE electron device letters 34 (3), 360-362, 2013
Processing and characterization of GaSb/high-k dielectric interfaces
E Hwang, C Eaton, S Mujumdar, H Madan, A Ali, D Bhatia, S Datta, ...
ECS Transactions 41 (5), 157, 2011
Systematic assessment of geographically diverse Aeromonas spp. as a correlate to accurate biotyping of clinical aeromonads, abstr. R-15
A Carnahan, S Behram, A Ali, D Jacobs, SW Joseph
Abstr. 90th Annu. Meet. Am. Soc. Microbiol, 248, 1990
Compressively Strained InSb MOSFETs with High Hole Mobility for P-Channel Application
M Barth, A Agrawal, A Ali, J Fastenau, WK Liu, S Datta
Device Research Conference (DRC), 2013
Antimonide NMOSFET with source side injection velocity of 2.7107cm/s for low power high performance logic applications
A Ali, H Madan, MJ Barth, MJ Hollander, JB Boos, BR Bennett, S Datta
2012 Symposium on VLSI Technology (VLSIT), 181-182, 2012
HfO2gated, self aligned and directly contacted indium arsenide quantum-well transistors for logic applications — A temperature and bias dependent study
A Ali, S Mookerjea, E Hwang, S Koveshnikov, S Oktyabrsky, V Tokranov, ...
2009 Device Research Conference, 55-56, 2009
AA Ali, HM Sayed, OM Abdalla, W Steglich, E Dagne
Bulletin of Pharmaceutical Sciences. Assiut 10 (1), 157-164, 1987
The system can't perform the operation now. Try again later.
Articles 1–20