| Reduction of threading dislocation density and suppression of cracking in sputter-deposited AlN templates annealed at high temperatures K Uesugi, Y Hayashi, K Shojiki, H Miyake Applied Physics Express 12 (6), 065501, 2019 | 75 | 2019 |
| Suppression of dislocation-induced spiral hillocks in MOVPE-grown AlGaN on face-to-face annealed sputter-deposited AlN template K Uesugi, K Shojiki, Y Tezen, Y Hayashi, H Miyake Applied Physics Letters 116 (6), 2020 | 56 | 2020 |
| Crystalline/amorphous Si integrated optical couplers for 2D/3D interconnection K Itoh, Y Kuno, Y Hayashi, J Suzuki, N Hojo, T Amemiya, N Nishiyama, ... IEEE Journal of Selected Topics in Quantum Electronics 22 (6), 255-263, 2016 | 31 | 2016 |
| Low threshold current density operation of a GaInAsP/Si hybrid laser prepared by low-temperature N2 plasma activated bonding Y Hayashi, R Osabe, K Fukuda, Y Atsumi, JH Kang, N Nishiyama, S Arai Japanese Journal of Applied Physics 52 (6R), 060202, 2013 | 31 | 2013 |
| Quantitative evaluation of strain relaxation in annealed sputter-deposited AlN film S Tanaka, K Shojiki, K Uesugi, Y Hayashi, H Miyake Journal of Crystal Growth 512, 16-19, 2019 | 30 | 2019 |
| Amorphous-silicon inter-layer grating couplers with metal mirrors toward 3-D interconnection JH Kang, Y Atsumi, Y Hayashi, J Suzuki, Y Kuno, T Amemiya, ... IEEE Journal of Selected Topics in Quantum Electronics 20 (4), 317-322, 2014 | 26 | 2014 |
| GaInAsP/silicon-on-insulator hybrid laser with ring-resonator-type reflector fabricated by N2 plasma-activated bonding Y Hayashi, J Suzuki, S Inoue, SMT Hasan, Y Kuno, K Itoh, T Amemiya, ... Japanese Journal of Applied Physics 55 (8), 082701, 2016 | 24 | 2016 |
| 50 Gbps data transmission through amorphous silicon interlayer grating couplers with metal mirrors JH Kang, Y Atsumi, Y Hayashi, J Suzuki, Y Kuno, T Amemiya, ... Applied Physics Express 7 (3), 032202, 2014 | 19 | 2014 |
| Polarity inversion of aluminum nitride by direct wafer bonding Y Hayashi, R Katayama, T Akiyama, T Ito, H Miyake Applied Physics Express 11 (3), 031003, 2018 | 16 | 2018 |
| Fabrication of AlN templates on SiC substrates by sputtering-deposition and high-temperature annealing K Uesugi, Y Hayashi, K Shojiki, S Xiao, K Nagamatsu, H Yoshida, ... Journal of Crystal Growth 510, 13-17, 2019 | 15 | 2019 |
| High-temperature operation of gallium oxide memristors up to 600 K K Sato, Y Hayashi, N Masaoka, T Tohei, A Sakai Scientific Reports 13 (1), 1261, 2023 | 14 | 2023 |
| Design of apodized hydrogenated amorphous silicon grating couplers with metal mirrors for inter-layer signal coupling: Toward three-dimensional optical interconnection Y Kuno, JH Kang, Y Hayashi, J Suzuki, T Amemiya, N Nishiyama, S Arai Japanese Journal of Applied Physics 54 (4S), 04DG04, 2015 | 13 | 2015 |
| Local and anisotropic strain in AlN film on sapphire observed by Raman scattering spectroscopy K Shojiki, Y Hayashi, K Uesugi, H Miyake Japanese Journal of Applied Physics 58 (SC), SCCB17, 2019 | 12 | 2019 |
| Propagation of threading dislocations and effects of Burgers vectors in HVPE-grown GaN bulk crystals on Na-flux-grown GaN substrates T Hamachi, T Tohei, Y Hayashi, M Imanishi, S Usami, Y Mori, N Ikarashi, ... Journal of Applied Physics 129 (22), 2021 | 10 | 2021 |
| Curvature-controllable and crack-free AlN/sapphire templates fabricated by sputtering and high-temperature annealing Y Hayashi, K Tanigawa, K Uesugi, K Shojiki, H Miyake Journal of Crystal Growth 512, 131-135, 2019 | 10 | 2019 |
| Monolithic device for modelocking and stabilization of frequency combs CC Lee, Y Hayashi, KL Silverman, A Feldman, T Harvey, RP Mirin, ... Optics Express 23 (26), 33038-33043, 2015 | 9 | 2015 |
| Introduction of AlInAs-oxide current-confinement structure into GaInAsP/SOI hybrid Fabry–Pérot laser J Suzuki, Y Hayashi, S Inoue, T Amemiya, N Nishiyama, S Arai Japanese Journal of Applied Physics 56 (6), 062103, 2017 | 8 | 2017 |
| Comprehensive analysis of current leakage at individual screw and mixed threading dislocations in freestanding GaN substrates T Hamachi, T Tohei, Y Hayashi, M Imanishi, S Usami, Y Mori, A Sakai Scientific Reports 13 (1), 2436, 2023 | 7 | 2023 |
| Gate-tunable plasticity in artificial synaptic devices based on four-terminal amorphous gallium oxide memristors T Ikeuchi, Y Hayashi, T Tohei, A Sakai Applied Physics Express 16 (1), 015509, 2023 | 6 | 2023 |
| Molecular beam homoepitaxy of N-polar AlN: Enabling role of aluminum-assisted surface cleaning Z Zhang, Y Hayashi, T Tohei, A Sakai, V Protasenko, J Singhal, H Miyake, ... Science Advances 8 (36), eabo6408, 2022 | 6 | 2022 |
Shigehisa AraiQuantum Nanoelectronics Research Center, Tokyo Institute of TechnologyBestätigte E-Mail-Adresse bei pe.titech.ac.jp
