| A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond S Dünkel, M Trentzsch, R Richter, P Moll, C Fuchs, O Gehring, M Majer, ... 2017 IEEE International Electron Devices Meeting (IEDM), 19.7. 1-19.7. 4, 2017 | 458 | 2017 |
| A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs M Trentzsch, S Flachowsky, R Richter, J Paul, B Reimer, D Utess, ... 2016 IEEE International Electron Devices Meeting (IEDM), 11.5. 1-11.5. 4, 2016 | 359 | 2016 |
| Switching kinetics in nanoscale hafnium oxide based ferroelectric field-effect transistors H Mulaosmanovic, J Ocker, S Müller, U Schroeder, J Müller, ... ACS applied materials & interfaces 9 (4), 3792-3798, 2017 | 292 | 2017 |
| Novel ferroelectric FET based synapse for neuromorphic systems H Mulaosmanovic, J Ocker, S Müller, M Noack, J Müller, P Polakowski, ... 2017 Symposium on VLSI Technology, T176-T177, 2017 | 244 | 2017 |
| Complex internal bias fields in ferroelectric hafnium oxide T Schenk, M Hoffmann, J Ocker, M Pesic, T Mikolajick, U Schroeder ACS applied materials & interfaces 7 (36), 20224-20233, 2015 | 235 | 2015 |
| Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cells H Mulaosmanovic, S Slesazeck, J Ocker, M Pesic, S Muller, S Flachowsky, ... 2015 IEEE International Electron Devices Meeting (IEDM), 26.8. 1-26.8. 3, 2015 | 138 | 2015 |
| FeFET: A versatile CMOS compatible device with game-changing potential S Beyer, S Dünkel, M Trentzsch, J Müller, A Hellmich, D Utess, J Paul, ... 2020 IEEE International Memory Workshop (IMW), 1-4, 2020 | 114 | 2020 |
| High endurance strategies for hafnium oxide based ferroelectric field effect transistor J Muller, P Polakowski, S Muller, H Mulaosmanovic, J Ocker, T Mikolajick, ... 2016 16th non-volatile memory technology symposium (NVMTS), 1-7, 2016 | 93 | 2016 |
| In-gap electronic structure of LaAlO 3-SrTiO 3 heterointerfaces investigated by soft x-ray spectroscopy A Koitzsch, J Ocker, M Knupfer, MC Dekker, K Dörr, B Büchner, ... Physical Review B 84 (24), 245121, 2011 | 55 | 2011 |
| Memory cell arrangement and methods thereof M Mennenga, J Ocker US Patent 11,309,034, 2022 | 47 | 2022 |
| Memory cell and methods thereof SF Müller, M Noack, J Ocker, R Jähne US Patent 10,438,645, 2019 | 41 | 2019 |
| Interplay Between Switching and Retention in HfO2-Based Ferroelectric FETs H Mulaosmanovic, F Müller, M Lederer, T Ali, R Hoffmann, K Seidel, ... IEEE Transactions on Electron Devices 67 (8), 3466-3471, 2020 | 39 | 2020 |
| Reconfigurable Si nanowire nonvolatile transistors SJ Park, DY Jeon, S Piontek, M Grube, J Ocker, V Sessi, A Heinzig, ... Advanced Electronic Materials 4 (1), 1700399, 2018 | 30 | 2018 |
| 2017 Symposium on VLSI Technology H Mulaosmanovic, J Ocker, S Müller, M Noack, J Müller, P Polakowski, ... Symposium on VLSI Technology, T176-T177, 2017 | 27 | 2017 |
| Impact of field cycling on HfO2 based non-volatile memory devices U Schroeder, M Pešic, T Schenk, H Mulaosmanovic, S Slesazeck, J Ocker, ... 2016 46th European Solid-State Device Research Conference (ESSDERC), 364-368, 2016 | 19 | 2016 |
| Detailed analysis of oxide related charges and metal-oxide barriers in terrace etched Al2O3 and HfO2 on AlGaN/GaN heterostructure capacitors A Winzer, N Szabó, J Ocker, R Hentschel, M Schuster, F Schubert, ... Journal of Applied Physics 118 (12), 2015 | 19 | 2015 |
| Application and Benefits of Target Programming Algorithms for Ferroelectric HfO2 Transistors H Zhou, J Ocker, A Padovani, M Pesic, M Trentzsch, S Dünkel, ... 2020 IEEE International Electron Devices Meeting (IEDM), 18.6. 1-18.6. 4, 2020 | 18 | 2020 |
| IEEE International Electron Devices Meeting (IEDM) M Trentzsch, S Flachowsky, R Richter, J Paul, B Reimer, D Utess, ... San Francisco, CA, 11.5, 2016 | 18 | 2016 |
| 2017 IEEE Int. Electron Devices Meeting (IEDM) S Dünkel, M Trentzsch, R Richter, P Moll, C Fuchs, O Gehring, M Majer, ... IEEE, 2017 | 16 | 2017 |
| Mechanism of Retention Degradation after Endurance Cycling of HfO2-based Ferroelectric Transistors H Zhou, J Ocker, M Pesic, A Padovani, M Trentzsch, S Dünkel, J Müller, ... 2021 Symposium on VLSI Technology, 1-2, 2021 | 11 | 2021 |
