| A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond S Dünkel, M Trentzsch, R Richter, P Moll, C Fuchs, O Gehring, M Majer, ... 2017 IEEE International Electron Devices Meeting (IEDM), 19.7. 1-19.7. 4, 2017 | 289 | 2017 |
| A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs M Trentzsch, S Flachowsky, R Richter, J Paul, B Reimer, D Utess, ... 2016 IEEE International Electron Devices Meeting (IEDM), 11.5. 1-11.5. 4, 2016 | 224 | 2016 |
| Switching kinetics in nanoscale hafnium oxide based ferroelectric field-effect transistors H Mulaosmanovic, J Ocker, S Müller, U Schroeder, J Müller, ... ACS applied materials & interfaces 9 (4), 3792-3798, 2017 | 213 | 2017 |
| Novel ferroelectric FET based synapse for neuromorphic systems H Mulaosmanovic, J Ocker, S Müller, M Noack, J Müller, P Polakowski, ... 2017 Symposium on VLSI Technology, T176-T177, 2017 | 171 | 2017 |
| Complex internal bias fields in ferroelectric hafnium oxide T Schenk, M Hoffmann, J Ocker, M Pešić, T Mikolajick, U Schroeder ACS applied materials & interfaces 7 (36), 20224-20233, 2015 | 163 | 2015 |
| Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cells H Mulaosmanovic, S Slesazeck, J Ocker, M Pesic, S Muller, S Flachowsky, ... 2015 IEEE International Electron Devices Meeting (IEDM), 26.8. 1-26.8. 3, 2015 | 102 | 2015 |
| High endurance strategies for hafnium oxide based ferroelectric field effect transistor J Muller, P Polakowski, S Muller, H Mulaosmanovic, J Ocker, T Mikolajick, ... 2016 16th Non-Volatile Memory Technology Symposium (NVMTS), 1-7, 2016 | 64 | 2016 |
| FeFET: A versatile CMOS compatible device with game-changing potential S Beyer, S Dünkel, M Trentzsch, J Müller, A Hellmich, D Utess, J Paul, ... 2020 IEEE International Memory Workshop (IMW), 1-4, 2020 | 53 | 2020 |
| In-gap electronic structure of LaAlO 3-SrTiO 3 heterointerfaces investigated by soft x-ray spectroscopy A Koitzsch, J Ocker, M Knupfer, MC Dekker, K Dörr, B Büchner, ... Physical Review B 84 (24), 245121, 2011 | 50 | 2011 |
| Interplay Between Switching and Retention in HfO2-Based Ferroelectric FETs H Mulaosmanovic, F Müller, M Lederer, T Ali, R Hoffmann, K Seidel, ... IEEE Transactions on Electron Devices 67 (8), 3466-3471, 2020 | 21 | 2020 |
| Reconfigurable Si nanowire nonvolatile transistors SJ Park, DY Jeon, S Piontek, M Grube, J Ocker, V Sessi, A Heinzig, ... Advanced Electronic Materials 4 (1), 1700399, 2018 | 16 | 2018 |
| Detailed analysis of oxide related charges and metal-oxide barriers in terrace etched Al2O3 and HfO2 on AlGaN/GaN heterostructure capacitors A Winzer, N Szabó, J Ocker, R Hentschel, M Schuster, F Schubert, ... Journal of Applied Physics 118 (12), 124106, 2015 | 16 | 2015 |
| 2017 Symposium on VLSI Technology H Mulaosmanovic, J Ocker, S Müller, M Noack, J Müller, P Polakowski, ... Kyoto, Japan, 2017 | 15 | 2017 |
| IEEE International Electron Devices Meeting (IEDM) M Trentzsch, S Flachowsky, R Richter, J Paul, B Reimer, D Utess, ... San Francisco, CA, 11.5, 2016 | 15 | 2016 |
| Impact of field cycling on HfO2 based non-volatile memory devices U Schroeder, M Pešic, T Schenk, H Mulaosmanovic, S Slesazeck, J Ocker, ... 2016 46th European Solid-State Device Research Conference (ESSDERC), 364-368, 2016 | 13 | 2016 |
| Application and Benefits of Target Programming Algorithms for Ferroelectric HfO2 Transistors H Zhou, J Ocker, A Padovani, M Pesic, M Trentzsch, S Dünkel, ... 2020 IEEE International Electron Devices Meeting (IEDM), 18.6. 1-18.6. 4, 2020 | 10 | 2020 |
| Memory cell and methods thereof SF Müller, M Noack, J Ocker, R Jähne US Patent 10,438,645, 2019 | 10 | 2019 |
| 2017 IEEE Int. Electron Devices Meeting (IEDM) S Dünkel, M Trentzsch, R Richter, P Moll, C Fuchs, O Gehring, M Majer, ... IEEE, 2017 | 10 | 2017 |
| Analysis of threshold voltage instability in AlGaN/GaN MISHEMTs by forward gate voltage stress pulses A Winzer, M Schuster, R Hentschel, J Ocker, U Merkel, A Jahn, ... physica status solidi (a) 213 (5), 1246-1251, 2016 | 9 | 2016 |
| High-k/GaN interface engineering toward AlGaN/GaN MIS-HEMT with improved Vth stability N Szabó, A Wachowiak, A Winzer, J Ocker, J Gärtner, R Hentschel, ... Journal of Vacuum Science & Technology B, Nanotechnology and …, 2017 | 7 | 2017 |
