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Johannes Ocker
Johannes Ocker
NaMLab
Verified email at namlab.com
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Year
A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond
S Dünkel, M Trentzsch, R Richter, P Moll, C Fuchs, O Gehring, M Majer, ...
2017 IEEE International Electron Devices Meeting (IEDM), 19.7. 1-19.7. 4, 2017
2892017
A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs
M Trentzsch, S Flachowsky, R Richter, J Paul, B Reimer, D Utess, ...
2016 IEEE International Electron Devices Meeting (IEDM), 11.5. 1-11.5. 4, 2016
2242016
Switching kinetics in nanoscale hafnium oxide based ferroelectric field-effect transistors
H Mulaosmanovic, J Ocker, S Müller, U Schroeder, J Müller, ...
ACS applied materials & interfaces 9 (4), 3792-3798, 2017
2132017
Novel ferroelectric FET based synapse for neuromorphic systems
H Mulaosmanovic, J Ocker, S Müller, M Noack, J Müller, P Polakowski, ...
2017 Symposium on VLSI Technology, T176-T177, 2017
1712017
Complex internal bias fields in ferroelectric hafnium oxide
T Schenk, M Hoffmann, J Ocker, M Pešić, T Mikolajick, U Schroeder
ACS applied materials & interfaces 7 (36), 20224-20233, 2015
1632015
Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cells
H Mulaosmanovic, S Slesazeck, J Ocker, M Pesic, S Muller, S Flachowsky, ...
2015 IEEE International Electron Devices Meeting (IEDM), 26.8. 1-26.8. 3, 2015
1022015
High endurance strategies for hafnium oxide based ferroelectric field effect transistor
J Muller, P Polakowski, S Muller, H Mulaosmanovic, J Ocker, T Mikolajick, ...
2016 16th Non-Volatile Memory Technology Symposium (NVMTS), 1-7, 2016
642016
FeFET: A versatile CMOS compatible device with game-changing potential
S Beyer, S Dünkel, M Trentzsch, J Müller, A Hellmich, D Utess, J Paul, ...
2020 IEEE International Memory Workshop (IMW), 1-4, 2020
532020
In-gap electronic structure of LaAlO 3-SrTiO 3 heterointerfaces investigated by soft x-ray spectroscopy
A Koitzsch, J Ocker, M Knupfer, MC Dekker, K Dörr, B Büchner, ...
Physical Review B 84 (24), 245121, 2011
502011
Interplay Between Switching and Retention in HfO2-Based Ferroelectric FETs
H Mulaosmanovic, F Müller, M Lederer, T Ali, R Hoffmann, K Seidel, ...
IEEE Transactions on Electron Devices 67 (8), 3466-3471, 2020
212020
Reconfigurable Si nanowire nonvolatile transistors
SJ Park, DY Jeon, S Piontek, M Grube, J Ocker, V Sessi, A Heinzig, ...
Advanced Electronic Materials 4 (1), 1700399, 2018
162018
Detailed analysis of oxide related charges and metal-oxide barriers in terrace etched Al2O3 and HfO2 on AlGaN/GaN heterostructure capacitors
A Winzer, N Szabó, J Ocker, R Hentschel, M Schuster, F Schubert, ...
Journal of Applied Physics 118 (12), 124106, 2015
162015
2017 Symposium on VLSI Technology
H Mulaosmanovic, J Ocker, S Müller, M Noack, J Müller, P Polakowski, ...
Kyoto, Japan, 2017
152017
IEEE International Electron Devices Meeting (IEDM)
M Trentzsch, S Flachowsky, R Richter, J Paul, B Reimer, D Utess, ...
San Francisco, CA, 11.5, 2016
152016
Impact of field cycling on HfO2 based non-volatile memory devices
U Schroeder, M Pešic, T Schenk, H Mulaosmanovic, S Slesazeck, J Ocker, ...
2016 46th European Solid-State Device Research Conference (ESSDERC), 364-368, 2016
132016
Application and Benefits of Target Programming Algorithms for Ferroelectric HfO2 Transistors
H Zhou, J Ocker, A Padovani, M Pesic, M Trentzsch, S Dünkel, ...
2020 IEEE International Electron Devices Meeting (IEDM), 18.6. 1-18.6. 4, 2020
102020
Memory cell and methods thereof
SF Müller, M Noack, J Ocker, R Jähne
US Patent 10,438,645, 2019
102019
2017 IEEE Int. Electron Devices Meeting (IEDM)
S Dünkel, M Trentzsch, R Richter, P Moll, C Fuchs, O Gehring, M Majer, ...
IEEE, 2017
102017
Analysis of threshold voltage instability in AlGaN/GaN MISHEMTs by forward gate voltage stress pulses
A Winzer, M Schuster, R Hentschel, J Ocker, U Merkel, A Jahn, ...
physica status solidi (a) 213 (5), 1246-1251, 2016
92016
High-k/GaN interface engineering toward AlGaN/GaN MIS-HEMT with improved Vth stability
N Szabó, A Wachowiak, A Winzer, J Ocker, J Gärtner, R Hentschel, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2017
72017
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