Actinic extreme ultraviolet mask inspection beyond 0.25 numericalaperture KA Goldberg, P Naulleau, I Mochi, EH Anderson, SB Rekawa, CD Kemp, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008 | 35 | 2008 |
A study of defects on EUV masks using blank inspection, patterned mask inspection, and wafer inspection S Huh, L Ren, D Chan, S Wurm, K Goldberg, I Mochi, T Nakajima, ... Extreme ultraviolet (EUV) lithography 7636, 182-188, 2010 | 28 | 2010 |
Improving the performance of the Actinic Inspection Tool with an optimized alignment procedure I Mochi, KA Goldberg, P Naulleau, S Huh Alternative Lithographic Technologies 7271, 590-600, 2009 | 27 | 2009 |
Printability and inspectability of programmed pit defects on the masks in EUV lithography IY Kang, HS Seo, BS Ahn, DG Lee, D Kim, S Huh, CW Koh, B Cha, ... Extreme Ultraviolet (EUV) Lithography 7636, 434-442, 2010 | 26 | 2010 |
Particle removal challenges of EUV patterned masks for the sub-22nm HP node A Rastegar, S Eichenlaub, AJ Kadaksham, B Lee, M House, S Huh, ... Extreme Ultraviolet (EUV) Lithography 7636, 210-220, 2010 | 24 | 2010 |
Photomask and method of manufacturing the same JH Park, S Huh US Patent 7,563,547, 2009 | 23 | 2009 |
Benchmarking EUV mask inspection beyond 0.25 NA KA Goldberg, I Mochi, PP Naulleau, H Han, S Huh Photomask Technology 2008 7122, 774-781, 2008 | 23 | 2008 |
Study of real defects on EUV blanks and a strategy for EUV mask inspection S Huh, A Rastegar, S Wurm, K Goldberg, I Mochi, T Nakajima, ... 26th European Mask and Lithography Conference 7545, 226-233, 2010 | 21 | 2010 |
EUV pattern defect detection sensitivity based on aerial image linewidth measurements KA Goldberg, I Mochi, P Naulleau, T Liang, PY Yan, S Huh Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009 | 21 | 2009 |
Actinic imaging and evaluation of phase structures on extreme ultraviolet lithography masks I Mochi, KA Goldberg, S Huh Journal of Vacuum Science & Technology B 28 (6), C6E11-C6E16, 2010 | 19 | 2010 |
Carbon contamination topography analysis of EUV masks YJ Fan, L Yankulin, P Thomas, C Mbanaso, A Antohe, R Garg, Y Wang, ... Extreme Ultraviolet (EUV) Lithography 7636, 149-156, 2010 | 19 | 2010 |
Lifetime of EUVL masks as a function of degree of carbon contamination and capping materials S Huh, H Kim, G Yoon, J Choi, HS Lee, DG Lee, B Ahn, HS Seo, D Kim, ... Emerging Lithographic Technologies XII 6921, 329-337, 2008 | 19 | 2008 |
Effects of mask absorber structures on the extreme ultraviolet lithography HS Seo, DG Lee, H Kim, S Huh, BS Ahn, H Han, D Kim, SS Kim, HK Cho, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008 | 18 | 2008 |
Advanced extreme ultraviolet resist testing using the SEMATECH Berkeley 0.3-NA microfield exposure tool PP Naulleau, CN Anderson, J Chiu, K Dean, P Denham, KA Goldberg, ... Emerging Lithographic Technologies XII 6921, 1022-1032, 2008 | 17 | 2008 |
Collecting EUV mask images through focus by wavelength tuning KA Goldberg, I Mochi, S Huh Alternative Lithographic Technologies 7271, 969-976, 2009 | 16 | 2009 |
SEMATECH EUVL mask program status H Yun, F Goodwin, S Huh, K Orvek, B Cha, A Rastegar, P Kearney Photomask and Next-Generation Lithography Mask Technology XVI 7379, 95-102, 2009 | 15 | 2009 |
Method of manufacturing EUVL alternating phase-shift mask S Huh, HB Kim, SW Choi, D Kim, C Jeon US Patent 7,601,467, 2009 | 14 | 2009 |
Mask defect verification using actinic inspection and defect mitigation technology S Huh, P Kearney, S Wurm, F Goodwin, K Goldberg, I Mochi, ... Alternative Lithographic Technologies 7271, 934-942, 2009 | 14 | 2009 |
Extreme ultraviolet photomask and methods and apparatuses for manufacturing the extreme ultraviolet photomask I Jang, S Woo, S Huh US Patent 8,048,595, 2011 | 13 | 2011 |
EUV Actinic Defect Inspection and Defect Printability at sub-32 nm Half-pitch S Huh, P Kearney, S Wurm, F Goodwin, H Han, K Goldberg, I Mochi, ... 25th European Mask and Lithography Conference, 1-7, 2009 | 13 | 2009 |