| Computerized setup for double-monochromator photoreflectance spectroscopy LP Avakyants, PY Bokov, AV Chervyakov Technical Physics 50, 1316-1318, 2005 | 21* | 2005 |
| Electroreflectance spectra of InGaN/AlGaN/GaN quantum-well heterostructures LP Avakyants, ML Badgutdinov, PY Bokov, AV Chervyakov, SS Shirokov, ... Semiconductors 41, 1060-1066, 2007 | 12 | 2007 |
| Interference effects in the electroreflectance and electroluminescence spectra of InGaN/AlGaN/GaN light-emitting-diode heterostructures LP Avakyants, PY Bokov, AV Chervyakov, AV Chuyas, AE Yunovich, ... Semiconductors 44, 1090-1095, 2010 | 11 | 2010 |
| Unintentional indium incorporation into barriers of InGaN/GaN multiple quantum wells studied by photoreflectance and photoluminescence excitation spectroscopy S Freytag, M Feneberg, C Berger, J Bläsing, A Dadgar, G Callsen, ... Journal of Applied Physics 120 (1), 2016 | 9 | 2016 |
| Interband optical transitions in GaAs modulation-doped quantum wells: photoreflectance experiment and self-consistent calculations LP Avakyants, PY Bokov, AV Chervyakov, GB Galiev, EA Klimov, IS Vasil, ... Semiconductor science and technology 21 (4), 462, 2006 | 9 | 2006 |
| Study of built-in electric field in active region of GaN/InGaN/AlGaNLEDs by electroreflectance spectroscopy LP Avakyants, AE Aslanyan, PY Bokov, AV Chervyakov, KY Polozhentsev Solid-State Electronics 130, 45-48, 2017 | 7 | 2017 |
| Impact of AlN spacer on metal–semiconductor–metal Pt–InAlGaN/GaN heterostructures for ultraviolet detection T Brazzini, S Pandey, MF Romero, PY Bokov, M Feneberg, G Tabares, ... Japanese Journal of Applied Physics 52 (8S), 08JK04, 2013 | 7 | 2013 |
| The built-in electric field in P-HEMT heterostructures with near-surface quantum wells AlxGa1− xAs/InyGa1− yAs/GaAs RA Khabibullin, IS Vasil'evskii, DS Ponomarev, GB Galiev, EA Klimov, ... Journal of Physics: Conference Series 345 (1), 012015, 2012 | 7 | 2012 |
| The difference between reflectance and electroreflectance spectra of AlGaN/GaN/InGaN LED structures L Avakyants, A Aslanyan, P Bokov, A Chervyakov, K Polozhentsev physica status solidi c 9 (3‐4), 818-821, 2012 | 6 | 2012 |
| Piezoelectric field compensation in the InGaN quantum wells of GaN/InGaN/AlGaN LEDs structures: electroreflectance experiment L Avakyants, P Bokov, A Chervyakov, A Yunovich, E Vasileva, B Yavich physica status solidi c 7 (7‐8), 1863-1865, 2010 | 6 | 2010 |
| Determination of the carrier concentration in doped n-GaAs layers by Raman and light reflection spectroscopies LP Avakyants, PY Bokov, NA Volchkov, IP Kazakov, AV Chervyakov Optics and Spectroscopy 102, 712-716, 2007 | 6 | 2007 |
| Photoreflection studies of band offsets at the heterojunction in strained short-period GaAs/GaAsP superlattices LP Avakyants, PY Bokov, TP Kolmakova, AV Chervyako Semiconductors 38, 1384-1389, 2004 | 6 | 2004 |
| Electroreflectance characterization of AlInGaN/GaN high-electron mobility heterostructures RG P Yu Bokov, T Brazzini, M F Romero, F Calle, M Feneberg Semiconductor science and technology 30 (8), 085014, 2015 | 5 | 2015 |
| Study of the effects of size quantization in coupled AlxGa1−x As/GaAs/Alx Ga1−x as quantum wells by means of photoreflectance spectroscopy LP Avakyants, PY Bokov, GB Galiev, VÉ Kaminskii, VA Kul’bachinskii, ... Optics and Spectroscopy 93, 857-861, 2002 | 4 | 2002 |
| Electroreflectance Spectra of InGaN/AlGaN/GaN pn-Heterostructures AE Yunovich, L Avakyants, M Badgutdinov, P Bokov, A Chervyakov, ... MRS Online Proceedings Library (OPL) 955, 0955-I15-36, 2006 | 3 | 2006 |
| Investigation into the Distribution of Built-in Electric Fields in LED Heterostructures with Multiple GaN/InGaN Quantum Wells by Electroreflectance Spectroscopy AE Aslanyan, LP Avakyants, PY Bokov, AV Chervyakov Semiconductors 53, 477-483, 2019 | 2 | 2019 |
| Electroreflectance spectra from multiple InGaN/GaN quantum wells in the nonuniform electric field of a p–n junction LP Avakyants, AE Aslanyan, PY Bokov, KY Polozhentsev, AV Chervyakov Semiconductors 51, 189-192, 2017 | 2 | 2017 |
| Photoreflectance spectroscopy of delta-doped GaAs layers LP Avakyants, PY Bokov, IV Bugakov, TP Kolmakova, AV Chervyakov Inorganic Materials 47, 455-458, 2011 | 2 | 2011 |
| Photoreflection studies of the dopant activation in InP implanted with Be+ ions LP Avakyants, PY Bokov, AV Chervyakov Semiconductors 39, 174-176, 2005 | 2 | 2005 |
| Photoreflectance spectroscopy study of LT-GaAs layers grown on Si and GaAs substrates LP Avakyants, PY Bokov, IP Kazakov, MA Bazalevsky, PM Deev, ... Semiconductors 52, 849-852, 2018 | 1 | 2018 |
Galib GalievInstitute of Ultrahigh Frequency Semiconductor Electronics of RAS, MoscowVerified email at isvch.ru
