Follow
Xh Zheng
Xh Zheng
中国科学院上海位系统与信息技术研究所
Verified email at mail.sim.ac.cn
Title
Cited by
Cited by
Year
Antibacterial activity of large-area monolayer graphene film manipulated by charge transfer
J Li, G Wang, H Zhu, M Zhang, X Zheng, Z Di, X Liu, X Wang
Scientific reports 4 (1), 4359, 2014
5162014
Facile and highly effective synthesis of controllable lattice sulfur-doped graphene quantum dots via hydrothermal treatment of durian
G Wang, Q Guo, D Chen, Z Liu, X Zheng, A Xu, S Yang, G Ding
ACS applied materials & interfaces 10 (6), 5750-5759, 2018
2262018
Robust ultra-low-friction state of graphene via moiré superlattice confinement
X Zheng, L Gao, Q Yao, Q Li, M Zhang, X Xie, S Qiao, G Wang, T Ma, Z Di, ...
Nature communications 7 (1), 13204, 2016
1262016
Programmable graphene nanobubbles with three-fold symmetric pseudo-magnetic fields
P Jia, W Chen, J Qiao, M Zhang, X Zheng, Z Xue, R Liang, C Tian, L He, ...
Nature Communications 10 (1), 3127, 2019
812019
Fluorinated Graphene in Interface Engineering of Ge‐Based Nanoelectronics
X Zheng, M Zhang, X Shi, G Wang, L Zheng, Y Yu, A Huang, PK Chu, ...
Advanced Functional Materials 25 (12), 1805-1813, 2015
422015
Interface dipole engineering in metal gate/high-k stacks
AP Huang, XH Zheng, ZS Xiao, M Wang, ZF Di, PK Chu
Chinese Science Bulletin 57, 2872-2878, 2012
272012
Tuning local electrical conductivity via fine atomic scale structures of two-dimensional interfaces
S Zhang, L Gao, A Song, X Zheng, Q Yao, T Ma, Z Di, XQ Feng, Q Li
Nano Letters 18 (9), 6030-6036, 2018
252018
Barrier Reduction of Lithium Ion Tunneling through Graphene with Hybrid Defects: First‐Principles Calculations
Y Xin, A Huang, Q Hu, H Shi, M Wang, Z Xiao, X Zheng, Z Di, PK Chu
Advanced Theory and Simulations 1 (2), 1700009, 2018
162018
Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin-SiO2/Si p-channel metal-oxide-semiconductor stacks
XH Zheng, AP Huang, ZS Xiao, ZC Yang, M Wang, XW Zhang, WW Wang, ...
Applied Physics Letters 97 (13), 2010
162010
Flat-band voltage shift in metal-gate/high-k/Si stacks
AP Huang, XH Zheng, ZS Xiao, ZC Yang, M Wang, KC Paul, XD Yang
Chinese Physics B 20 (9), 097303, 2011
132011
Fermi-Level Pinning at Metal/High-Interface Influenced by Electron State Density of Metal Gate
ZC Yang, AP Huang, XH Zheng, ZS Xiao, XY Liu, XW Zhang, PK Chu, ...
IEEE electron device letters 31 (10), 1101-1103, 2010
112010
Tunable band offsets in the BP/P 4 O 10 van der Waals heterostructure: first-principles calculations
W Dou, A Huang, H Shi, X Zhang, X Zheng, M Wang, Z Xiao, L Liu, ...
Physical Chemistry Chemical Physics 20 (47), 29931-29938, 2018
92018
Interfacial monolayer graphene growth on arbitrary substrate by nickel-assisted ion implantation
D Chen, Q Guo, S Yang, Z Liu, X Zheng, N Zhang, A Xu, B Wang, G Wang, ...
Journal of materials science 53, 2631-2637, 2018
72018
Direct growth of single-layer graphene on Ni surface manipulated by Si barrier
G Wang, J Li, D Chen, L Zheng, X Zheng, Q Guo, X Wei, G Ding, M Zhang, ...
Applied Physics Letters 104 (21), 2014
72014
Progress in rare earth doped Hf-based high-k gate dielectrics
XH Zheng, AP Huang, ZC Yang, ZS Xiao, M Wang, GA Cheng
Acta Phys. Sin. 60 (1), 2011
72011
Seed‐Initiated Synthesis and Tunable Doping Graphene for High‐Performance Photodetectors
J Li, S Yang, G Wang, T Huang, Q Guo, Z Liu, P He, X Zheng, Y Wang, ...
Advanced Optical Materials 7 (24), 1901388, 2019
52019
Catalyst-free approach for growth of graphene sheets on high-density silica nanowires by CVD
Z Wang, Z Xue, G Wang, J Dai, X Zheng, J Ma, Y Li, M Zhang
Materials Letters 162, 165-168, 2016
52016
Manufacturing method of graphene modulated high-K oxide and metal gate MOS device
Z Di, X Zheng, G Wang, M Zhang, X Wang
US Patent 9,601,337, 2017
42017
Diffusion behavior of dual capping layers in TiN/LaN/AlN/HfSiOx/Si stack
XH Zheng, AP Huang, ZS Xiao, M Wang, XY Liu, ZW Wu, PK Chu
Applied Physics Letters 99 (13), 2011
42011
Progress in conductive properties of carbon-based doped polymer
CAO Qingchao, H Anping, W ZHANG
Polymer Materials Science & Engineering 28 (4), 177-181, 2012
32012
The system can't perform the operation now. Try again later.
Articles 1–20