| Полупроводниковые сенсоры в физико-химических исследованиях ИА Мясников, ВЯ Сухарев, ЛЮ Куприянов, СА Завьялов Наука, 1991 | 180 | 1991 |
| Process for treating exposed surfaces of a low dielectric constant carbon doped silicon oxide dielectric material to protect the material from damage V Sukharev, W Uesato, JR Hu, W Hsia, L Qian US Patent 6,114,259, 2000 | 150 | 2000 |
| Composite semiconductor gate dielectrics S Aronowitz, D Chan, J Kimball, D Lee, J Haywood, V Sukharev US Patent 6,087,229, 2000 | 115 | 2000 |
| Microtrenching resulting from specular reflection during chlorine etching of silicon RJ Hoekstra, MJ Kushner, V Sukharev, P Schoenborn Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1998 | 115 | 1998 |
| Physics-based electromigration assessment for power grid networks X Huang, T Yu, V Sukharev, SXD Tan Proceedings of the 51st Annual Design Automation Conference, 1-6, 2014 | 94 | 2014 |
| Poluprovodnikovye sensory v fiziko-khimicheskikh issledovaniyakh IA Myasnikov, VY Sukharev, LY Kupriyanov, SA Zav'yalov M.: Nauka, 327, 1991 | 94* | 1991 |
| Concerning the role of oxygen in photocatalytic decomposition of salicylic acid in water V Sukharev, R Kershaw Journal of Photochemistry and Photobiology A: Chemistry 98 (3), 165-169, 1996 | 89 | 1996 |
| Semiconductor sensors in physico-chemical studies LY Kupriyanov Elsevier Science, 1996 | 82* | 1996 |
| A model for electromigration-induced degradation mechanisms in dual-inlaid copper interconnects: Effect of interface bonding strength V Sukharev, E Zschech Journal of Applied Physics 96 (11), 6337-6343, 2004 | 81 | 2004 |
| A model for electromigration-induced degradation mechanisms in dual-inlaid copper interconnects: Effect of microstructure V Sukharev, E Zschech, WD Nix Journal of Applied Physics 102 (5), 053505, 2007 | 78 | 2007 |
| Apparatus and method of manufacture for integrated circuit and CMOS device including epitaxially grown dielectric on silicon carbide MR Mirabedini, V Sukharev US Patent 7,138,292, 2006 | 77 | 2006 |
| Multistep tungsten CVD process with amorphization step VY Sukharev, DJ Heine US Patent 5,804,249, 1998 | 77 | 1998 |
| Diffusion barrier for polysilicon gate electrode of MOS device in integrated circuit structure, and method of making same S Aronowitz, V Sukharev, J Owyang, J Haywood US Patent 5,837,598, 1998 | 68 | 1998 |
| Method of forming variable thickness gate dielectrics S Aronowitz, D Chan, J Kimball, D Lee, J Haywood, V Sukharev US Patent 6,033,998, 2000 | 67 | 2000 |
| Method and apparatus for forming dielectric films VK Sukharev US Patent 5,710,079, 1998 | 55 | 1998 |
| Low dielectric constant multiple carbon-containing silicon oxide dielectric material for use in integrated circuit structures, and method of making same S Aronowitz, V Sukharev, V Zubkov US Patent 6,303,047, 2001 | 52 | 2001 |
| Beyond Black’s equation: Full-chip EM/SM assessment in 3D IC stack V Sukharev Microelectronic Engineering 120, 99-105, 2014 | 46 | 2014 |
| Microstructure effect on EM-induced degradations in dual inlaid copper interconnects V Sukharev, A Kteyan, E Zschech, WD Nix IEEE Transactions on Device and Materials Reliability 9 (1), 87-97, 2009 | 46 | 2009 |
| Process for forming low k silicon oxide dielectric material while suppressing pressure spiking and inhibiting increase in dielectric constant V Sukharev, W Hsia US Patent 6,147,012, 2000 | 44 | 2000 |
| Physics-based electromigration models and full-chip assessment for power grid networks X Huang, A Kteyan, SXD Tan, V Sukharev IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2016 | 43 | 2016 |
Ehrenfried ZschechProfessor for Nanoanalysis, Technical University DresdenVerified email at ikts.fraunhofer.de
