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Valeriy Sukharev
Valeriy Sukharev
Technical Lead, Siemens EDA
Verified email at mentor.com - Homepage
Title
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Полупроводниковые сенсоры в физико-химических исследованиях
ИА Мясников, ВЯ Сухарев, ЛЮ Куприянов, СА Завьялов
Наука, 1991
2231991
Process for treating exposed surfaces of a low dielectric constant carbon doped silicon oxide dielectric material to protect the material from damage
V Sukharev, W Uesato, JR Hu, W Hsia, L Qian
US Patent 6,114,259, 2000
1522000
Microtrenching resulting from specular reflection during chlorine etching of silicon
RJ Hoekstra, MJ Kushner, V Sukharev, P Schoenborn
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer†…, 1998
1251998
Physics-based electromigration assessment for power grid networks
X Huang, T Yu, V Sukharev, SXD Tan
Proceedings of the 51st Annual Design Automation Conference, 1-6, 2014
1222014
Composite semiconductor gate dielectrics
S Aronowitz, D Chan, J Kimball, D Lee, J Haywood, V Sukharev
US Patent 6,087,229, 2000
1162000
Poluprovodnikovye sensory v fiziko-khimicheskikh issledovaniyakh
IA Myasnikov, VY Sukharev, LY Kupriyanov, SA Zav'yalov
M.: Nauka, 327, 1991
104*1991
Semiconductor sensors in physico-chemical studies
LY Kupriyanov
Elsevier Science, 1996
94*1996
A model for electromigration-induced degradation mechanisms in dual-inlaid copper interconnects: Effect of microstructure
V Sukharev, E Zschech, WD Nix
Journal of Applied Physics 102 (5), 053505, 2007
932007
Concerning the role of oxygen in photocatalytic decomposition of salicylic acid in water
V Sukharev, R Kershaw
Journal of Photochemistry and Photobiology A: Chemistry 98 (3), 165-169, 1996
921996
A model for electromigration-induced degradation mechanisms in dual-inlaid copper interconnects: Effect of interface bonding strength
V Sukharev, E Zschech
Journal of Applied Physics 96 (11), 6337-6343, 2004
872004
Multistep tungsten CVD process with amorphization step
VY Sukharev, DJ Heine
US Patent 5,804,249, 1998
821998
Apparatus and method of manufacture for integrated circuit and CMOS device including epitaxially grown dielectric on silicon carbide
MR Mirabedini, V Sukharev
US Patent 7,138,292, 2006
782006
Power grid electromigration checking using physics-based models
S Chatterjee, V Sukharev, FN Najm
IEEE Transactions on Computer-Aided Design of Integrated Circuits and†…, 2017
692017
Diffusion barrier for polysilicon gate electrode of MOS device in integrated circuit structure, and method of making same
S Aronowitz, V Sukharev, J Owyang, J Haywood
US Patent 5,837,598, 1998
691998
Method of forming variable thickness gate dielectrics
S Aronowitz, D Chan, J Kimball, D Lee, J Haywood, V Sukharev
US Patent 6,033,998, 2000
672000
Physics-based electromigration models and full-chip assessment for power grid networks
X Huang, A Kteyan, SXD Tan, V Sukharev
IEEE Transactions on Computer-Aided Design of Integrated Circuits and†…, 2016
642016
Beyond Black’s equation: Full-chip EM/SM assessment in 3D IC stack
V Sukharev
Microelectronic Engineering 120, 99-105, 2014
642014
Method and apparatus for forming dielectric films
VK Sukharev
US Patent 5,710,079, 1998
551998
Microstructure effect on EM-induced degradations in dual inlaid copper interconnects
V Sukharev, A Kteyan, E Zschech, WD Nix
IEEE Transactions on Device and Materials Reliability 9 (1), 87-97, 2009
522009
Low dielectric constant multiple carbon-containing silicon oxide dielectric material for use in integrated circuit structures, and method of making same
S Aronowitz, V Sukharev, V Zubkov
US Patent 6,303,047, 2001
522001
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