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Wolfgang Gehlhoff
Wolfgang Gehlhoff
Bestätigte E-Mail-Adresse bei sol.physik.tu-berlin.de
Titel
Zitiert von
Zitiert von
Jahr
Structural and electronic properties of Fe 3+ and Fe 2+ centers in GaN from optical and EPR experiments
E Malguth, A Hoffmann, W Gehlhoff, O Gelhausen, MR Phillips, X Xu
Physical Review B 74 (16), 165202, 2006
1272006
Lithium related deep and shallow acceptors in Li-doped ZnO nanocrystals
C Rauch, W Gehlhoff, MR Wagner, E Malguth, G Callsen, R Kirste, ...
Journal of Applied Physics 107 (2), 2010
962010
Phase and amplitude response of the ‘0.7 feature’caused by holes in silicon one-dimensional wires and rings
NT Bagraev, NG Galkin, W Gehlhoff, LE Klyachkin, AM Malyarenko
Journal of Physics: Condensed Matter 20 (16), 164202, 2008
782008
Transition metal ions in crystals with the fluorite structure
W Gehlhoff, W Ulrici
Physica Status Solidi. B, Basic Research 102 (1), 11-59, 1980
781980
EPR of iron‐boron centres in silicon
W Gehlhoff, KH Segsa
physica status solidi (b) 115 (2), 443-453, 1983
611983
A systematic study on zinc oxide materials containing group I metals (Li, Na, K)− synthesis from organometallic precursors, characterization, and properties
S Polarz, A Orlov, A Hoffmann, MR Wagner, C Rauch, R Kirste, ...
Chemistry of Materials 21 (16), 3889-3897, 2009
602009
Quantized conductance in silicon quantum wires
NT Bagraev, AD Buravlev, LE Klyachkin, AM Malyarenko, W Gehlhoff, ...
Semiconductors 36, 439-460, 2002
582002
Electron paramagnetic resonance of the Mn cluster in silicon
J Kreissl, W Gehlhoff
physica status solidi (b) 145 (2), 609-617, 1988
561988
EPR Investigations of ZnS: Mn and ZnSe: Mn) Single Crystals, Powders, Thin‐Film Structures
J Kreissl, W Gehlhoff
physica status solidi (a) 81 (2), 701-707, 1984
511984
Electron paramagnetic resonance in transition metal-doped ZnO nanowires
AO Ankiewicz, MC Carmo, NA Sobolev, W Gehlhoff, EM Kaidashev, ...
Journal of applied physics 101 (2), 2007
472007
Shallow and deep centers in heavily doped silicon quantum wells
W Gehlhoff, NT Bagraev, LE Klyachkin
Materials Science Forum 196, 467-472, 1995
451995
Quantum-well boron and phosphorus diffusion profiles in silicon
NT Bagraev, W Gehlhoff, LE Klyachkin, A Naeser, SA Rykov
Defect and Diffusion Forum 143, 1003-1008, 1997
431997
Iron group impurities in Β-FeSi 2 sstudied by EPR
K Irmscher, W Gehlhoff, Y Tomm, H Lange, V Alex
Physical Review B 55 (7), 4417, 1997
401997
Self-assembled impurity superlattices and microcavities in silicon
N Bagraev, A Bouravleuv, W Gehlhoff, L Klyachkin, A Malyarenko, ...
diffusion and defect data part a defect and diffusion forum, 673-678, 2001
382001
Electron paramagnetic resonance identification of the orthorhombic iron-indium pair in silicon
W Gehlhoff, P Emanuelsson, P Omling, HG Grimmeiss
Physical Review B 41 (12), 8560, 1990
381990
AM Ma lyarenko, VV Romanov, and SA Rykov
NT Bagraev, W Gehlhoff, LE Klyachkin
Physica C 437 (438), 21, 2006
362006
EDESR and ODMR of impurity centers in nanostructures inserted in silicon microcavities
NT Bagraev, VA Mashkov, EY Danilovsky, W Gehlhoff, DS Gets, ...
Applied Magnetic Resonance 39, 113-135, 2010
342010
Cyclotron resonance in heavily doped silicon quantum wells
W Gehlhoff, NT Bagraev, LE Klyachkin
Solid State Phenomena 47, 589-594, 1995
331995
Spin-dependent transport of holes in silicon quantum wells confined by superconductor barriers
NT Bagraev, W Gehlhoff, LE Klyachkin, AA Kudryavtsev, AM Malyarenko, ...
Physica C: Superconductivity and its applications 468 (7-10), 840-843, 2008
322008
High-temperature single-hole silicon transistors
NT Bagraev, LE Klyachkin, AM Malyarenko, W Gehlhoff
Superlattices and Microstructures 23 (6), 1333-1339, 1998
301998
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