Jonathan Houard
Jonathan Houard
Research Engineer, CNRS - Rouen University
Bestätigte E-Mail-Adresse bei univ-rouen.fr
Titel
Zitiert von
Zitiert von
Jahr
Thermal response of a field emitter subjected to ultra-fast laser illumination
F Vurpillot, J Houard, A Vella, B Deconihout
Journal of Physics D: Applied Physics 42 (12), 125502, 2009
1002009
Laser pulsing of field evaporation in atom probe tomography
TF Kelly, A Vella, JH Bunton, J Houard, EP Silaeva, J Bogdanowicz, ...
Current Opinion in Solid State and Materials Science 18 (2), 81-89, 2014
652014
Correlation of microphotoluminescence spectroscopy, scanning transmission electron microscopy, and atom probe tomography on a single nano-object containing an InGaN/GaN …
L Rigutti, I Blum, D Shinde, D Hernández-Maldonado, W Lefebvre, ...
Nano letters 14 (1), 107-114, 2014
612014
Optical near-field absorption at a metal tip far from plasmonic resonance
J Houard, A Vella, F Vurpillot, B Deconihout
Physical Review B 81 (12), 125411, 2010
592010
Three-dimensional thermal response of a metal subwavelength tip under femtosecond laser illumination
J Houard, A Vella, F Vurpillot, B Deconihout
Physical Review B 84 (3), 033405, 2011
382011
Tracking the path of dislocations across ordered Al3Zr nano-precipitates in three dimensions
W Lefebvre, N Masquelier, J Houard, R Patte, H Zapolsky
Scripta Materialia 70, 43-46, 2014
352014
Quantitative analysis of doped/undoped ZnO nanomaterials using laser assisted atom probe tomography: Influence of the analysis parameters
N Amirifar, R Lardé, E Talbot, P Pareige, L Rigutti, L Mancini, J Houard, ...
Journal of Applied Physics 118 (21), 215703, 2015
282015
Numerical study of femtosecond laser-assisted atom probe tomography
EP Silaeva, NS Shcheblanov, TE Itina, A Vella, J Houard, ...
Applied Physics A 110 (3), 703-707, 2013
252013
Multi-microscopy study of the influence of stacking faults and three-dimensional In distribution on the optical properties of m-plane InGaN quantum wells grown on microwire …
L Mancini, D Hernández-Maldonado, W Lefebvre, J Houard, I Blum, ...
Applied Physics Letters 108 (4), 042102, 2016
212016
Three-dimensional atomic-scale investigation of ZnO-MgxZn1−xO m-plane heterostructures
E Di Russo, L Mancini, F Moyon, S Moldovan, J Houard, FH Julien, ...
Applied Physics Letters 111 (3), 032108, 2017
192017
Statistical nanoscale study of localised radiative transitions in GaN/AlGaN quantum wells and AlGaN epitaxial layers
L Rigutti, L Mancini, W Lefebvre, J Houard, D Hernàndez-Maldonado, ...
Semiconductor Science and Technology 31 (9), 095009, 2016
192016
Conditions to cancel the laser polarization dependence of a subwavelength tip
J Houard, A Vella, F Vurpillot, B Deconihout
Applied Physics Letters 94 (12), 121905, 2009
172009
Coupling atom probe tomography and photoluminescence spectroscopy: Exploratory results and perspectives
L Rigutti, A Vella, F Vurpillot, A Gaillard, N Sevelin-Radiguet, J Houard, ...
Ultramicroscopy 132, 75-80, 2013
162013
Probing the thermal response of a silicon field emitter by ultra‐fast Laser Assisted Atom Probe Tomography
A Vella, EP Silaeva, J Houard, TE Itina, B Deconihout
Annalen der Physik 525 (1-2), L1-L5, 2013
162013
Compositional accuracy of atom probe tomography measurements in GaN: Impact of experimental parameters and multiple evaporation events
E Di Russo, I Blum, J Houard, M Gilbert, G Da Costa, D Blavette, L Rigutti
Ultramicroscopy 187, 126-134, 2018
132018
Ultrafast emission of ions during laser ablation of metal for 3D atom probe
A Vella, J Houard, F Vurpillot, B Deconihout
Applied surface science 255 (10), 5154-5158, 2009
132009
Optical contactless measurement of electric field-induced tensile stress in diamond nanoscale needles
L Rigutti, L Venturi, J Houard, A Normand, EP Silaeva, M Borz, ...
Nano letters 17 (12), 7401-7409, 2017
122017
Carrier localization in GaN/AlN quantum dots as revealed by three-dimensional multimicroscopy
L Mancini, F Moyon, D Hernandez-Maldonado, I Blum, J Houard, ...
Nano Letters 17 (7), 4261-4269, 2017
122017
Luminescent Characteristics of Needle‐Like Single Crystal Diamonds
SA Malykhin, J Houard, RR Ismagilov, AS Orekhov, A Vella, AN Obraztsov
physica status solidi (b) 255 (1), 1700189, 2018
112018
Field-dependent measurement of GaAs composition by atom probe tomography
E Di Russo, I Blum, J Houard, G Da Costa, D Blavette, L Rigutti
Microscopy and Microanalysis 23 (6), 1067-1075, 2017
112017
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