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Ivana Kovacevic-Badstuebner
Ivana Kovacevic-Badstuebner
Advanced Power Semiconductor Laboratory, ETH Zurich
Bestätigte E-Mail-Adresse bei aps.ee.ethz.ch
Titel
Zitiert von
Zitiert von
Jahr
New physical model for lifetime estimation of power modules
IF Kovačević, U Drofenik, JW Kolar
The 2010 International Power Electronics Conference-ECCE ASIA-, 2106-2114, 2010
2342010
3-D electromagnetic modeling of parasitics and mutual coupling in EMI filters
IF Kovačević, T Friedli, AM Müsing, JW Kolar
IEEE Transactions on Power Electronics 29 (1), 135-149, 2013
1182013
3-D electromagnetic modeling of EMI input filters
IF Kovačević, T Friedli, AM Muesing, JW Kolar
IEEE Transactions on Industrial Electronics 61 (1), 231-242, 2013
1102013
Accurate Temperature Estimation of SiC Power mosfets Under Extreme Operating Conditions
A Tsibizov, I Kovačević-Badstübner, B Kakarla, U Grossner
IEEE Transactions on Power Electronics 35 (2), 1855-1865, 2019
742019
Parasitic extraction procedures for SiC power modules
I Kovacevic-Badstuebner, R Stark, U Grossner, M Guacci, JW Kolar
CIPS 2018; 10th International Conference on Integrated Power Electronics …, 2018
442018
Analysis and design of a 1200 V All-SiC planar interconnection power module for next generation more electrical aircraft power electronic building blocks
M Guacci, D Bortis, IF Kovačević-Badstübner, U Grossner, JW Kolar
CPSS Transactions on Power Electronics and Applications 2 (4), 320-330, 2017
432017
Modelling for the lifetime prediction of power semiconductor modules
IF Kovacevic-Badstuebner, JW Kolar, U Schilling, H Chung, H Wang, ...
Reliability of Power Electronic Converter Systems, 103-140, 2015
352015
An extension of PEEC method for magnetic materials modeling in frequency domain
IF Kovačević, AM Müsing, JW Kolar
IEEE transactions on magnetics 47 (5), 910-913, 2010
262010
Circuit-based electrothermal modeling of SiC power modules with nonlinear thermal models
S Race, A Philipp, M Nagel, T Ziemann, I Kovacevic-Badstuebner, ...
IEEE transactions on power electronics 37 (7), 7965-7976, 2022
222022
Accuracy of three interterminal capacitance models for SiC power MOSFETs under fast switching
R Stark, A Tsibizov, N Nain, U Grossner, I Kovacevic-Badstuebner
IEEE Transactions on Power Electronics 36 (8), 9398-9410, 2021
222021
PEEC modelling of toroidal magnetic inductor in frequency domain
IF Kovačević, A Müsing, JW Kolar
The 2010 International Power Electronics Conference-ECCE ASIA-, 3158-3165, 2010
202010
Multi-domain simulation of transient junction temperatures and resulting stress-strain behavior of power switches for long-term mission profiles
U Drofenik, I Kovacevic, R Schmidt, JW Kolar
2008 11th Workshop on Control and Modeling for Power Electronics, 1-7, 2008
202008
Trade-off analysis of the p-base doping on ruggedness of SiC MOSFETs
B Kakarla, S Nida, J Mueting, T Ziemann, I Kovacevic-Badstuebner, ...
Microelectronics Reliability 76, 267-271, 2017
192017
Highly accurate virtual dynamic characterization of discrete SiC power devices
I Kovacevic-Badstuebner, T Ziemann, B Kakarla, U Grossner
2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017
192017
A fast method for the calculation of foil winding losses
I Kovačević-Badstübner, R Burkart, C Dittli, JW Kolar, A Musing
2015 17th European Conference on Power Electronics and Applications (EPE'15 …, 2015
192015
Gate capacitance characterization of silicon carbide and silicon power MOSFETs revisited
R Stark, A Tsibizov, I Kovacevic-Badstuebner, T Ziemann, U Grossner
IEEE Transactions on Power Electronics 37 (9), 10572-10584, 2022
182022
Optimization of rotary transformer for high-speed applications
D Bortis, I Kovacevic, L Fässler, JW Kolar
2013 IEEE 14th workshop on control and modeling for power electronics …, 2013
182013
A more accurate electromagnetic modeling of WBG power modules
I Kovačević-Badstübner, U Grossner, D Romano, G Antonini, J Ekman
2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018
162018
Design for reliability of SiC multichip power modules: The effect of variability
S Race, T Ziemann, I Kovacevic-Badstuebner, R Stark, S Tiwari, ...
2021 33rd International Symposium on Power Semiconductor Devices and ICs …, 2021
112021
Accuracy of thermal analysis for SiC power devices
S Race, T Ziemann, S Tiwari, I Kovacevic-Badstuebner, U Grossner
2021 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2021
112021
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