| The charge plasma PN diode RJE Hueting, B Rajasekharan, C Salm, J Schmitz IEEE electron device letters 29 (12), 1367-1369, 2008 | 327 | 2008 |
| Fabrication and characterization of the charge-plasma diode B Rajasekharan, RJE Hueting, C Salm, T Van Hemert, RAM Wolters, ... IEEE electron device letters 31 (6), 528-530, 2010 | 257 | 2010 |
| Cellular trench-gate field-effect transistors EA Hijzen, RJE Hueting US Patent 6,359,308, 2002 | 166 | 2002 |
| Electrostatic doping in semiconductor devices G Gupta, B Rajasekharan, RJE Hueting IEEE transactions on electron devices 64 (8), 3044-3055, 2017 | 141 | 2017 |
| Trenched schottky rectifiers EA Hijzen, RJE Hueting US Patent 6,441,454, 2002 | 101 | 2002 |
| A-BCD: An economic 100 V RESURF silicon-on-insulator BCD technology for consumer and automotive applications JA van der Pol, AW Ludikhuize, HGA Huizing, B Van Velzen, RJE Hueting, ... 12th International Symposium on Power Semiconductor Devices & ICs …, 2000 | 87 | 2000 |
| Gate-drain charge analysis for switching in power trench MOSFETs RJE Hueting, EA Hijzen, A Heringa, AW Ludikhuize, MAA Zandt IEEE Transactions on Electron Devices 51 (8), 1323-1330, 2004 | 75 | 2004 |
| RESURF stepped oxide (RSO) MOSFET for 85V having a record-low specific on-resistance Koops, Hijzen, Hueting 2004 Proceedings of the 16th International Symposium on Power Semiconductor …, 2004 | 69 | 2004 |
| On the optimization of SiGe-base bipolar transistors RJE Hueting, JW Slotboom, A Pruijmboom, WB De Boer, CE Timmering, ... IEEE Transactions on Electron Devices 43 (9), 1518-1524, 1996 | 67 | 1996 |
| Validity of the parabolic effective mass approximation in silicon and germanium n-MOSFETs with different crystal orientations JLPJ van der Steen, D Esseni, P Palestri, L Selmi, RJE Hueting IEEE transactions on electron devices 54 (8), 1843-1851, 2007 | 60 | 2007 |
| On the trade-off between quality factor and tuning ratio in tunable high-frequency capacitors MPJ Tiggelman, K Reimann, F Van Rijs, J Schmitz, RJE Hueting IEEE transactions on Electron Devices 56 (9), 2128-2136, 2009 | 51 | 2009 |
| Edge termination in MOS transistors RJE Hueting, EA Hijzen US Patent 6,936,890, 2005 | 48 | 2005 |
| Trench semiconductor device manufacture with a thicker upper insulating layer RJE Hueting, CE Timmering, HGR Maas US Patent 6,319,777, 2001 | 46 | 2001 |
| Trench-gate semiconductor devices and their manufacture GAM Hurkx, RJE Hueting US Patent 6,541,817, 2003 | 43 | 2003 |
| Selective-epitaxial base technology with 14 ps ECL-gate delay, for low power wide-band communication systems A Pruijmboom, D Terpstra, CE Timmering, WB De Boer, MJJ Theunissen, ... Proceedings of International Electron Devices Meeting, 747-750, 1995 | 41 | 1995 |
| Field-effect semiconductor devices RJE Hueting, EA Hijzen, R Van Dalen US Patent 6,600,194, 2003 | 40 | 2003 |
| Switching performance of low-voltage N-channel trench MOSFETs RJE Hueting, EA Hijzen, AW Ludikhuize Proceedings of the 14th International Symposium on Power Semiconductor …, 2002 | 40 | 2002 |
| Review of topside interconnections for wide bandgap power semiconductor packaging L Wang, W Wang, RJE Hueting, G Rietveld, JA Ferreira IEEE Transactions on Power Electronics 38 (1), 472-490, 2022 | 39 | 2022 |
| Opto-electronic modeling of light emission from avalanche-mode silicon p+ n junctions S Dutta, RJE Hueting, AJ Annema, L Qi, LK Nanver, J Schmitz Journal of applied physics 118 (11), 2015 | 37 | 2015 |
| Trench insulated gate field effect transistor RJE Hueting US Patent 7,408,223, 2008 | 36 | 2008 |
