| Dislocation density and strain-relaxation in Ge1− xSnx layers grown on Ge/Si (0 0 1) by low-temperature molecular beam epitaxy KR Khiangte, JS Rathore, V Sharma, S Bhunia, S Das, RS Fandan, ... Journal of Crystal Growth 470, 135-142, 2017 | 21 | 2017 |
| Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application R Sarkar, S Bhunia, D Nag, BC Barik, K Das Gupta, D Saha, S Ganguly, ... Applied Physics Letters 115 (6), 2019 | 18 | 2019 |
| Experimental evidence of a very thin superconducting layer in epitaxial indium nitride B Pal, BP Joshi, H Chakraborti, AK Jain, BK Barick, K Ghosh, S Bhunia, ... Superconductor Science and Technology 32 (1), 015009, 2018 | 15 | 2018 |
| Carrier-induced defect saturation in green InGaN LEDs: A potential phenomenon to enhance efficiency at higher wavelength regime D Nag, T Aggarwal, S Sinha, R Sarkar, S Bhunia, YF Chen, S Ganguly, ... Acs Photonics 8 (3), 926-932, 2021 | 12 | 2021 |
| Role of defect saturation in improving optical response from InGaN nanowires in higher wavelength regime D Nag, R Sarkar, S Bhunia, T Aggarwal, K Ghosh, S Sinha, S Ganguly, ... Nanotechnology 31 (49), 495705, 2020 | 12 | 2020 |
| Epi-Gd₂O₃-MOSHEMT: A Potential Solution Toward Leveraging the Application of AlGaN/GaN/Si HEMT With Improved ION/IOFF Operating at 473 K R Sarkar, BB Upadhyay, S Bhunia, RS Pokharia, D Nag, S Surapaneni, ... IEEE Transactions on Electron Devices 68 (6), 2653-2660, 2021 | 9 | 2021 |
| Engineering V-shaped pits in InGaN layers grown by PA-MBE toward optimizing the active region of green LEDs D Nag, T Aggarwal, R Sarkar, S Bhunia, S Ganguly, D Saha, A Laha JOSA B 36 (3), 616-623, 2019 | 9 | 2019 |
| Decomposition resilience of GaN nanowires, crested and surficially passivated by AlN S Bhunia, R Sarkar, D Nag, K Ghosh, KR Khiangte, S Mahapatra, A Laha Crystal Growth & Design 20 (8), 4867-4874, 2020 | 8 | 2020 |
| Triaxially uniform high-quality AlxGa (1− x) N (x∼ 50%) nanowires on template free sapphire substrate R Sarkar, K Ghosh, S Bhunia, D Nag, KR Khiangte, A Laha Nanotechnology 30 (6), 065603, 2018 | 6 | 2018 |
| Growth of uniform Mg-doped p-AlGaN nanowires using plasma-assisted molecular beam epitaxy technique for UV-A emitters R Sarkar, S Bhunia, D Jana, D Nag, S Chatterjee, A Laha Nanotechnology 33 (38), 384001, 2022 | 3 | 2022 |
| Scaling Nanowire-Supported GaN Quantum Dots to the Sub-10 nm Limit, Yielding Complete Suppression of the Giant Built-in Potential S Bhunia, R Sarkar, D Nag, D Jana, S Mahapatra, A Laha Crystal Growth & Design 23 (6), 3935-3941, 2023 | 1 | 2023 |
| All Epitaxy Nd2O3/AlGaN/GaN MOSHEMT: Increased Linearity and Thermal Stability U Singh, H Genath, R Sarkar, S Bhunia, J Kruegener, HJ Osten, A Laha | | 2024 |
| Highly Oriented Crystalline Si on Epitaxial Gd2O3/Si (111) substrate using Low-cost Radio Frequency Sputtering for Silicon on Insulator Application S Patil, S Kumar, AH Pandey, S Bhunia, B Kamaliya, A Sharma, ... Thin Solid Films, 140272, 2024 | | 2024 |
| Ultrafast Green Single Photon Emission from an InGaN Quantum Dot-in-a-GaN Nanowire at Room Temperature S Bhunia, A Majumder, S Chatterjee, R Sarkar, D Nag, K Saha, ... arXiv preprint arXiv:2311.14821, 2023 | | 2023 |
| Investigation of Magnesium Silicate as an Effective Gate Dielectric for AlGaN/GaN Metal Oxide High Electron Mobility Transistors (MOSHEMT) S Pudi, N Bhardwaj, R Sarkar, VS Bellamkonda, U Singh, A Jain, ... arXiv preprint arXiv:2308.08515, 2023 | | 2023 |
| Investigating defects in InGaN based optoelectronics: from material and device perspective D Nag, S Bhunia, R Sarkar, S Chatterjee, A Laha Materials Research Express 10 (2), 024004, 2023 | | 2023 |
| Ultra high-sensitive, prompt response and recovering Pt/(Pt+ SiO2) cermet layer/GaN-based hydrogen sensor for life-saving applications VSSNV Bellamkonda, BM Arora, S Pudi, S Bhunia, A Laha Nanotechnology 31 (46), 46LT02, 2020 | | 2020 |
| Engineering decomposition-resilience and de-coalescence of GaN nanowire ensembles S Bhunia, R Sarkar, D Nag, K Ghosh, KR Khiangte, S Mahapatra, A Laha arXiv preprint arXiv:1812.02443, 2018 | | 2018 |
| Effect of nitridation time on structural, optical and electrical properties of InN films grown on c-sapphire substrates by PAMBE K Ghosh, R Sarkar, S Bhunia, A Laha Journal of Materials Science: Materials in Electronics 29, 3927-3934, 2018 | | 2018 |
| Gallium Controlled Optical Emission Under In-Rich Regime in Self-Assembled Ingan Nanowires Grown on Si (111) S Chatterjee, R Sarkar, S Bhunia, D Gayakwad, D Saha, A Laha Available at SSRN 4748727, 0 | | |
Apurba LahaProfessor, Department of Electrical Engineering, Indian Institute of Technology BombayVerified email at ee.iitb.ac.in
