HoKwon Kim
HoKwon Kim
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Zitiert von
Zitiert von
A review of chemical vapour deposition of graphene on copper
C Mattevi, H Kim, M Chhowalla
Journal of Materials Chemistry 21 (10), 3324-3334, 2011
Insulator to semimetal transition in graphene oxide
G Eda, C Mattevi, H Yamaguchi, HK Kim, M Chhowalla
The Journal of Physical Chemistry C 113 (35), 15768-15771, 2009
Activation energy paths for graphene nucleation and growth on Cu
HK Kim, C Mattevi, MR Calvo, JC Oberg, L Artiglia, S Agnoli, ...
ACS nano 6 (4), 3614-3623, 2012
Production and processing of graphene and related materials
C Backes, AM Abdelkader, C Alonso, A Andrieux-Ledier, R Arenal, ...
2D Materials 7 (2), 022001, 2020
Highly uniform 300 mm wafer-scale deposition of single and multilayered chemically derived graphene thin films
H Yamaguchi, G Eda, C Mattevi, HK Kim, M Chhowalla
ACS nano 4 (1), 524-528, 2010
Suppressing nucleation in metalorganic chemical vapor deposition of MoS2 monolayers by alkali metal halides
HK Kim, D Ovchinnikov, D Deiana, D Unuchek, A Kis
Nano Letters, 2017
Epitaxial graphene growth and shape dynamics on copper: phase-field modeling and experiments
E Meca, J Lowengrub, H Kim, C Mattevi, VB Shenoy
Nano letters 13 (11), 5692-5697, 2013
Wafer-scale MOCVD growth of monolayer MoS2 on sapphire and SiO2
H Cun, M Macha, HK Kim, K Liu, Y Zhao, T LaGrange, A Kis, A Radenovic
Nano Research 12, 2646-2652, 2019
Modeling of the self-limited growth in catalytic chemical vapor deposition of graphene
HK Kim, E Saiz, M Chhowalla, C Mattevi
New Journal of Physics 15 (5), 053012, 2013
Optoelectronic properties of graphene thin films deposited by a Langmuir–Blodgett assembly
HK Kim, C Mattevi, HJ Kim, A Mittal, KA Mkhoyan, RE Riman, ...
Nanoscale 5 (24), 12365-12374, 2013
Large-grain MBE-grown GaSe on GaAs with a Mexican hat-like valence band dispersion
MW Chen, HK Kim, D Ovchinnikov, A Kuc, T Heine, O Renault, A Kis
npj 2D Materials and Applications 2 (1), 2, 2018
Doping efficiency of single and randomly stacked bilayer graphene by iodine adsorption
HK Kim, O Renault, A Tyurnina, JP Simonato, D Rouchon, D Mariolle, ...
Applied Physics Letters 105 (1), 2014
Solution-processable organic dielectrics for graphene electronics
C Mattevi, F Colléaux, HK Kim, YH Lin, KT Park, M Chhowalla, ...
Nanotechnology 23 (34), 344017, 2012
Electronic Properties of Transferable Atomically Thin MoSe2/h-BN Heterostructures Grown on Rh(111)
MW Chen, HK Kim, C Bernard, M Pizzochero, J Zaldı́var, JI Pascual, ...
ACS nano 12 (11), 11161-11168, 2018
Free-standing electronic character of monolayer MoS2 in van der Waals epitaxy
HK Kim, D Dumcenco, M Frégnaux, A Benayad, MW Chen, YC Kung, ...
Physical Review B 94, 081401(R), 2016
Epitaxial growth in dislocation-free strained asymmetric alloy films
RC Desai, HK Kim, A Chatterji, D Ngai, S Chen, N Yang
Physical Review B 81 (23), 235301, 2010
Influence of Cu substrate topography on the growth morphology of chemical vapour deposited graphene
Y Xiao, HK Kim, C Mattevi, M Chhowalla, RC Maher, LF Cohen
Carbon 65, 7-12, 2013
Chemistry and electronics of single layer MoS2 domains from photoelectron spectromicroscopy using laboratory excitation sources
M Frégnaux, H Kim, D Rouchon, V Derycke, J Bleuse, D Voiry, ...
Surface and Interface Analysis, 2016
Correlating chemical and electronic states from quantitative photoemission electron microscopy of transition-metal dichalcogenide heterostructures
O Renault, H Kim, D Dumcenco, D Unuchek, N Chevalier, M Gay, A Kis, ...
Journal of Vacuum Science & Technology A 39 (5), 2021
Doping characteristics of iodine on as-grown chemical vapor deposited graphene on Pt
HK Kim, O Renault, A Tyurnina, JF Guillet, JP Simonato, D Rouchon, ...
Ultramicroscopy, 2015
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