| Vertical InAs Nanowire Wrap Gate Transistors with ft> 7 GHz and f max> 20 GHz M Egard, S Johansson, AC Johansson, KM Persson, AW Dey, BM Borg, ... Nano letters 10 (3), 809-812, 2010 | 136 | 2010 |
| In-line analysis of organ-on-chip systems with sensors: Integration, fabrication, challenges, and potential S Fuchs, S Johansson, AØ Tjell, G Werr, T Mayr, M Tenje ACS Biomaterials Science & Engineering 7 (7), 2926-2948, 2021 | 103 | 2021 |
| High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates S Johansson, E Memisevic, LE Wernersson, E Lind Electron Device Letters, IEEE 35 (5), 518-520, 2014 | 95 | 2014 |
| A High-Frequency Transconductance Method for Characterization of High-κ Border Traps in III-V MOSFETs S JOHANSSON, M BERG, KM PERSSON, E LIND Transactions on Electron Devices, IEEE 60 (2), 776-781, 2013 | 88 | 2013 |
| Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates KM Persson, M Berg, MB Borg, J Wu, S Johansson, J Svensson, ... Transactions on Electron Device, IEEE 60 (9), 2761-2767, 2013 | 74 | 2013 |
| Organ-on-a-chip technology: a novel approach to investigate cardiovascular diseases V Paloschi, M Sabater-Lleal, H Middelkamp, A Vivas, S Johansson, ... Cardiovascular research 117 (14), 2742-2754, 2021 | 65 | 2021 |
| A practical guide to microfabrication and patterning of hydrogels for biomimetic cell culture scaffolds M Tenje, F Cantoni, AMP Hernández, SS Searle, S Johansson, L Barbe, ... Organs-on-a-Chip 2, 100003, 2020 | 60 | 2020 |
| RF characterization of vertical InAs nanowire wrap-gate transistors integrated on Si substrates S Johansson, M Egard, S Gorji Ghalamestani, BM Borg, M Berg, ... Microwave Theory and Techniques, IEEE Transactions on 59 (10), 2733-2738, 2011 | 45 | 2011 |
| Uniform and position-controlled InAs nanowires on 2′′ Si substrates for transistor applications SG Ghalamestani, S Johansson, BM Borg, E Lind, KA Dick, ... Nanotechnology 23 (1), 015302, 2011 | 42 | 2011 |
| Uniform and position-controlled InAs nanowires on 2′′ Si substrates for transistor applications SG Ghalamestani, S Johansson, BM Borg, E Lind, KA Dick, ... Nanotechnology 23 (1), 015302, 2011 | 42 | 2011 |
| Defect evaluation in InGaAs field effect transistors with HfO2 or Al2O3 dielectric G Roll, J Mo, E Lind, S Johansson, LE Wernersson Applied Physics Letters 106 (20), 2015 | 23 | 2015 |
| Highly controlled InAs nanowires on Si (111) wafers by MOVPE SG Ghalamestani, S Johansson, BM Borg, KA Dick, LE Wernersson physica status solidi (c) 9 (2), 206-209, 2012 | 20 | 2012 |
| RF and DC Analysis of Stressed InGaAs MOSFETs G Roll, E Lind, M Egard, S Johansson, L Ohlsson, LE Wernersson Electron Device Letters, IEEE 35 (2), 181-183, 2014 | 16 | 2014 |
| A microscopy-compatible temperature regulation system for single-cell phenotype analysis–demonstrated by thermoresponse mapping of microalgae M Andersson, S Johansson, H Bergman, L Xiao, L Behrendt, M Tenje Lab on a Chip 21 (9), 1694-1705, 2021 | 10 | 2021 |
| Photophysiological response of Symbiodiniaceae single cells to temperature stress L Xiao, S Johansson, S Rughöft, F Burki, MM Sandin, M Tenje, L Behrendt The ISME Journal 16 (8), 2060-2064, 2022 | 5 | 2022 |
| Two-Photon Polymerization Printing with High Metal Nanoparticle Loading NI Kilic, GM Saladino, S Johansson, R Shen, C McDorman, MS Toprak, ... ACS Applied Materials & Interfaces 15 (42), 49794-49804, 2023 | 4 | 2023 |
| High frequency performance of vertical InAs nanowire MOSFET E Lind, M Egard, S Johansson, AC Johansson, BM Borg, C Thelander, ... 2010 22nd International Conference on Indium Phosphide and Related Materials …, 2010 | 4 | 2010 |
| RF characterization of vertical InAs nanowire MOSFETs with f t and f max above 140 GHz S Johansson, E Memisevic, LE Wernersson, E Lind 26th International Conference on Indium Phosphide and Related Materials …, 2014 | 3 | 2014 |
| Characterization of border traps in III-V MOSFETs using an RF transconductance method S Johansson, J Mo, E Lind 2013 Proceedings of the European Solid-State Device Research Conference …, 2013 | 3 | 2013 |
| Temperature and annealing effects on InAs nanowire MOSFETs S Johansson, S Gorji Ghalamestani, M Borg, E Lind, LE Wernersson Microelectronic Engineering 88 (7), 1105-1108, 2011 | 3 | 2011 |
