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Citations per year
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Cited by
All
Since 2019
Citations
514
489
h-index
4
4
i10-index
4
4
0
120
60
30
90
2018
2019
2020
2021
2022
2023
2024
23
75
117
75
88
88
45
Public access
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4 articles
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Mads Eide Ingebrigtsen
University of Oslo
Verified email at smn.uio.no -
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Year
Iron and intrinsic deep level states in Ga2O3
ME Ingebrigtsen, JB Varley, AY Kuznetsov, BG Svensson, G Alfieri, ...
Applied Physics Letters 112 (4), 042104
, 2018
261
2018
Impact of proton irradiation on conductivity and deep level defects in β-Ga2O3
ME Ingebrigtsen, AY Kuznetsov, BG Svensson, G Alfieri, A Mihaila, ...
Apl Materials 7 (2)
, 2019
199
*
2019
Bulk β-Ga
2
O
3
with (010) and (201) Surface Orientation: Schottky Contacts and Point Defects
ME Ingebrigtsen, L Vines, G Alfieri, A Mihaila, U Badstübner, ...
Materials Science Forum 897, 755-758
, 2017
31
2017
Generation and metastability of deep level states in β-Ga2O3 exposed to reverse bias at elevated temperatures
ME Ingebrigtsen, AY Kuznetsov, BG Svensson, G Alfieri, A Mihaila, ...
Journal of Applied Physics 125 (18)
, 2019
21
2019
Electrical characterization and identification of deep levels in β-Ga2O3
ME Ingebrigtsen
2
2019
Band gap engineering of the ZnO/Si heterojunction using amorphous buffer layers
ME Ingebrigtsen
2014
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