| Electron and hole transport layers optimization by numerical simulation of a perovskite solar cell F Azri, A Meftah, N Sengouga, A Meftah Solar energy 181, 372-378, 2019 | 332 | 2019 |
| Electron and hole transport layers optimization by numerical simulation of a perovskite solar cell AM Faiza Azri, Afak Meftah, Nouredine Sengouga Solar Energy 181, 372-378, 2019 | 332 | 2019 |
| Comparative study of conventional and inverted P3HT: PCBM organic solar cell M Abdallaoui, N , Sengouga, A Chala, AF Meftah, AM Meftah Optical Materials 105 (109916), 1-10, 2020 | 44 | 2020 |
| Effects of high-k gate dielectrics on the electrical performance and reliability of an amorphous indium–tin–zinc–oxide thin film transistor (a-ITZO TFT): an analytical survey SCAM Taki Eddine Taouririt, Afak Meftah, Nouredine Sengouga, Marwa Adaika Nanoscale 11 (48), 23459-23474, 2019 | 29 | 2019 |
| Numerical simulation of the effect of recombination centres and traps created by electron irradiation on the performance degradation of GaAs solar cells AF Meftah, N Sengouga, A Belghachi, AM Meftah Journal of Physics: Condensed Matter 21 (21), 215802, 2009 | 18 | 2009 |
| Optical characterization of a-IGZO thin film for simulation of a-IGZO (n)/µ-Si (p) heterojunction solar cell F Azri, M Labed, AF Meftah, N Sengouga, AM Meftah Optical and Quantum Electronics 48, 1-16, 2016 | 16 | 2016 |
| Numerical simulation of the defect density influence on the steady state response of a silicon-based p–i–n cell AM Meftah, AF Meftah, F Hiouani, A Merazga Journal of Physics: Condensed Matter 16 (12), 2003, 2004 | 16 | 2004 |
| Irradiation effect on the electrical characteristics of an AlGaAs/GaAs based solar cell: Comparison between electron and proton irradiation by numerical simulation W Laiadi, A Meftah, N Sengouga, A Meftah Superlattices and Microstructures 58, 44-52, 2013 | 14 | 2013 |
| Computer modelling and analysis of the photodegradation effect in a-Si: H p—i—n solar cell AF Bouhdjar, L Ayat, AM Meftah, N Sengouga, AF Meftah Journal of Semiconductors 36 (1), 014002, 2015 | 13 | 2015 |
| Computer modelling and analysis of the photodegradation effect in a-Si: H p—i—n solar cell AF Bouhdjar, L Ayat, AM Meftah, N Sengouga, AF Meftah Journal of Semiconductors 36 (1), 014002, 2015 | 13 | 2015 |
| Numerical simulation of the effect of the Al molar fraction and thickness of an AlxGa1− xAs window on the sensitivity of a p+–n–n+ GaAs solar cell to 1 MeV electron irradiation AF Meftah, N Sengouga, AM Meftah, S Khelifi Renewable Energy 34 (11), 2426-2431, 2009 | 12 | 2009 |
| Numerical simulation of the effect of the Al molar fraction and thickness of an AlxGa1− xAs window on the sensitivity of a p+–n–n+ GaAs solar cell to 1 MeV electron irradiation AF Meftah, N Sengouga, AM Meftah, S Khelifi Renewable Energy 34 (11), 2426-2431, 2009 | 12 | 2009 |
| A theoretical study of light induced defect creation, annealing and photoconductivity degradation in a-Si: H AF Meftah, AM Meftah, A Merazga Journal of Physics: Condensed Matter 16 (18), 3107, 2004 | 9 | 2004 |
| Intensity dependence of quantum efficiency and photo‐gating effects in thin film silicon solar cells S Reynolds, C Main, V Smirnov, A Meftah physica status solidi c 7 (3‐4), 505-508, 2010 | 8 | 2010 |
| Numerical simulation and analysis of the dark and illuminated J–V characteristics of a-Si-H p–i–n diodes AM Meftah, AF Meftah, A Merazga Journal of Physics: Condensed Matter 18 (23), 5459, 2006 | 8 | 2006 |
| Modelling of Staebler-Wronski effect in hydrogenated amorphous silicon under moderate and intense illumination AF Meftah, AM Meftah, A Merazga Defect and Diffusion Forum 230, 221-232, 2004 | 7 | 2004 |
| Etude comparative entre les cellules solaires de type p+-AlGaAs/p-GaAs/n-GaAs et une autre de type n+-AlGaAs/n-GaAs/p-GaAs. بالي, أمينة Université Mohamed Khider Biskra, 2013 | 6 | 2013 |
| Prediction of the performance degradation of GaAs solar cells by electron irradiation A Meftah, N Sengouga, A Meftah Journal of Renewable Energies 11 (4), 603-610, 2008 | 6 | 2008 |
| Computer simulation of the a-Si: H p–i–n solar cell performance sensitivity to the free carrier’s mobilities, the capture cross sections and the density of gap states AF Meftah, AM Meftah, A Belghachi Journal of Physics: Condensed Matter 18 (41), 9435, 2006 | 6 | 2006 |
| Defect pool model based transient photoconductivity and the conduction band tail profile in a-Si: H A Merazga, AF Meftah, AM Meftah, C Main, S Reynolds Journal of Physics: Condensed Matter 13 (48), 10969, 2001 | 6 | 2001 |
Nouredine SengougaUniversité de BiskraVerified email at univ-biskra.dz
